Andrew J Ray

US Patent:

6881967, Apr 19, 2005

Filed:

Jan 22, 2004

Appl. No.:

10/762821

Inventors:

Andrew M. Ray - Newburyport MA, US

Assignee:

Axcelis Technologies, Inc. - Beverly MA

International Classification:

B32B003/02

US Classification:

25049221, 414935, 428 641

Abstract:

The present invention is directed to accounting for crystal cut error data in ion implantation systems, thereby facilitating more accurate ion implantation. One or more aspects of the invention also consider possible shadowing effects that can result from features formed on the surface of a wafer being doped. According to one or more aspects of the invention, crystal cut error data and optionally feature data also are periodically fed forward in one or more ion implantation stages or systems to ascertain how to re-orient the ion beam with respect to the workpiece to achieve desired implantation results.

US Patent:

6903350, Jun 7, 2005

Filed:

Jun 10, 2004

Appl. No.:

10/865061

Inventors:

Bo H. Vanderberg - Gloucester MA, US
Andrew M. Ray - Newburyport MA, US
Kevin W. Wenzel - Belmont MA, US

Assignee:

Axcelis Technologies, Inc. - Beverly MA

International Classification:

H01L021/324

US Classification:

25049221, 2504921, 2504922, 25049222, 25049223, 2504923, 25044211

Abstract:

Ion implantation systems and scanning systems therefor are provided, in which focus adjustment apparatus is provided to dynamically adjust a focal property of an ion beam to compensate for at least one time varying focal property of a scanner. Methods are provided for providing a scanned ion beam to a workpiece, comprising dynamically adjusting a focal property of an ion beam, scanning the ion beam to create a scanned ion beam, and directing the scanned ion beam toward a workpiece.

US Patent:

6940079, Sep 6, 2005

Filed:

Dec 8, 2004

Appl. No.:

11/006840

Inventors:

Andrew M. Ray - Newburyport MA, US

Assignee:

Axcelis Technologies, Inc. - Beverly MA

International Classification:

B32B003/02

US Classification:

25049221, 414935, 428 641

Abstract:

The present invention is directed to accounting for crystal cut error data in ion implantation systems, thereby facilitating more accurate ion implantation. One or more aspects of the invention also consider possible shadowing effects that can result from features formed on the surface of a wafer being doped. According to one or more aspects of the invention, crystal cut error data and optionally feature data also are periodically fed forward in one or more ion implantation stages or systems to ascertain how to re-orient the ion beam with respect to the workpiece to achieve desired implantation results.

US Patent:

6953942, Oct 11, 2005

Filed:

Sep 20, 2004

Appl. No.:

10/944989

Inventors:

Michael A. Graf - Belmont MA, US
Andrew M. Ray - Newburyport MA, US

Assignee:

Axcelis Technologies, Inc. - Beverly MA

International Classification:

H01J037/302

US Classification:

25049221, 25044211

Abstract:

The present invention is directed to implanting ions in a workpiece in a serial implantation process in a manner that produces a scan pattern that resembles the size, shape and/or other dimensional aspects of the workpiece. This improves efficiency and yield as an ion beam that the workpiece is oscillated through does not significantly “overshoot” the workpiece. The scan pattern may be slightly larger than the workpiece, however, so that inertial effects associated with changes in direction, velocity and/or acceleration of the workpiece as the workpiece reverses direction in oscillating back and forth are accounted for within a small amount of “overshoot”. This facilitates moving the workpiece through the ion beam at a relatively constant velocity which in turn facilitates substantially more uniform ion implantation.

US Patent:

6992308, Jan 31, 2006

Filed:

Feb 27, 2004

Appl. No.:

10/788861

Inventors:

Michael A. Graf - Cambridge MA, US
Andrew M. Ray - Newburyport MA, US

Assignee:

Axcelis Technologies, Inc. - Beverly MA

International Classification:

H01J 37/317
G21G 5/00

US Classification:

25049221, 2504923, 2504922

Abstract:

The present invention is directed to modulating ion beam current in an ion implantation system to mitigate non-uniform ion implantations, for example. Multiple arrangements are revealed for modulating the intensity of the ion beam. For example, the volume or number of ions within the beam can be altered by biasing one or more different elements downstream of the ion source. Similarly, the dosage of ions within the ion beam can also be manipulated by controlling elements more closely associated with the ion source. In this manner, the implantation process can be regulated so that the wafer can be implanted with a more uniform coating of ions.

US Patent:

7417242, Aug 26, 2008

Filed:

Mar 27, 2006

Appl. No.:

11/390039

Inventors:

Andrew M. Ray - Newburyport MA, US

Assignee:

Axcelis Technologies, Inc. - Beverly MA

International Classification:

G21F 5/10
H01J 37/08

US Classification:

25049221, 2504921, 25044211, 250397, 250310, 250311, 250398, 2504911, 2504922, 250423 R, 2504923, 250396 R, 250396 ML, 250424, 25049222, 25044111, 31311101, 31311131

Abstract:

A system, apparatus, and method for determining position and two angles of incidence of an ion beam to a surface of a workpiece is provided. A measurement apparatus having an elongate first and second sensor is coupled to a translation mechanism, wherein the first sensor extends in a first direction perpendicular to the translation, and wherein the second sensor extends at an oblique angle to the first sensor. The first and second elongate sensors sense one or more characteristics of the ion beam as the first and second sensors pass through the ion beam at a respective first time and a second time, and a controller is operable to determine a position and first and second angle of incidence of the ion beam, based, at least in part, on the one or more characteristics of the ion beam sensed by the first sensor and second sensor at the first and second times.

US Patent:

7453160, Nov 18, 2008

Filed:

Apr 23, 2004

Appl. No.:

10/830734

Inventors:

Andrew M. Ray - Newburyport MA, US

Assignee:

Axcelis Technologies, Inc. - Beverly MA

International Classification:

H01L 23/544

US Classification:

257797, 4147446, 414935

Abstract:

The present invention is directed to aligning wafers within semiconductor fabrication tools. More particularly, one or more aspects of the present invention pertain to quickly and efficiently finding an alignment marking, such as an alignment notch, on a wafer to allow the wafer to be appropriately oriented within an alignment tool. Unlike conventional systems, the notch is located without firmly holding and spinning or rotating the wafer. Exposure to considerable backside contaminants is thereby mitigated and the complexity and/or cost associated with aligning the wafer is thereby reduced.

US Patent:

7994487, Aug 9, 2011

Filed:

May 29, 2009

Appl. No.:

12/474786

Inventors:

Andrew M. Ray - Newburyport MA, US

Assignee:

Axcelis Technologies, Inc. - Beverly MA

International Classification:

H01J 37/08

US Classification:

2504922, 250423 R, 134 21

Abstract:

A method for reducing particle contamination during implantation of ions comprises providing an implantation system for implanting ions into a workpiece via an ion beam, wherein one or more components are under selective vacuum and have one or more contaminants in a first state disposed thereon. A gas is introduced to the implantation system, wherein the gas generally reacts with at least a portion of the one or more contaminants, therein transforming the at least a portion of the one or more contaminants into a second state The at least a portion of the one or more contaminants in the second state remain disposed on the one or more components, and wherein the at least a portion of the second state of the one or more contaminants generally does not produce particle contamination on the one or more workpieces.