Vladimir Rodov - Redondo Beach CA Paul Chang - Saratoga CA Jianren Bao - Fullerton CA Wayne Y. W. Hsueh - San Jose CA Arthur Ching-Lang Chiang - Saratoga CA Geeng-Chuan Chern - Cupertino CA
A two-terminal power diode has improved reverse bias breakdown voltage and on resistance includes a semiconductor body having two opposing surfaces and a superjunction structure therebetween, the superjunction structure including a plurality of alternating P and N doped regions aligned generally perpendicular to the two surfaces. The P and N doped regions can be parallel stripes or a mesh with each region being surrounded by doped material of opposite conductivity type. A diode junction associated with one surface can be an anode region with a gate controlled channel region connecting the anode region to the superjunction structure. Alternatively, the diode junction can comprise a metal forming a Schottky junction with the one surface. The superjunction structure is within the cathode and spaced from the anode. The spacing can be varied during device fabrication.
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Stanford University Graduate School of Business 2006 - 2011
Doctorates, Doctor of Philosophy, Philosophy
Stanford University 2006 - 2011
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University of Pennsylvania 2002 - 2006
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