Christopher D Macdonald

US Patent:

20090171914, Jul 2, 2009

Filed:

Sep 2, 2008

Appl. No.:

12/231364

Inventors:

Harold S. Montgomery - Milwaukee WI, US
Seth Ashby - Oakland CA, US
Mathew DeBow - Orinda CA, US
Christopher J. MacDonald - Brisbane CA, US
Thomas S. Litchfield - Brentwood CA, US

International Classification:

G06F 17/30

US Classification:

707 3, 7071041, 707E17009, 707E17108

Abstract:

Systems and methods according to the present invention provide improved location of files over a network. More specifically, according to the present invention, a method of indexing digital video files on a content management system running on a web server includes associating a descriptive domain name with a dedicated node on the system, on which a single video is provided. Thus, each video is provided with a dedicated webpage, on which associated items, such as community feedback and attributes, may be displayed.

US Patent:

20180323274, Nov 8, 2018

Filed:

Jul 12, 2018

Appl. No.:

16/033500

Inventors:

- Waltham MA, US
Kezia Cheng - Lowell MA, US
Christopher J. MacDonald - Medford MA, US

Assignee:

Raytheon Company - Waltham MA

International Classification:

H01L 29/47
H01L 29/778
H01L 21/285
H01L 29/20
H01L 29/78

Abstract:

A Schottky contact structure for a semiconductor device having a Schottky contact and an electrode for the contact structure disposed on the contact. The Schottky contact comprises: a first layer of a first metal in Schottky contact with a semiconductor; a second layer of a second metal on the first layer; a third layer of the first metal on the second layer; and a fourth layer of the second metal on the third layer. The electrode for the Schottky contact structure disposed on the Schottky contact comprises a third metal, the second metal providing a barrier against migration between the third metal and the first metal.

US Patent:

20180033744, Feb 1, 2018

Filed:

Jul 26, 2016

Appl. No.:

15/219327

Inventors:

- Waltham MA, US
Adrian D. Williams - Methuen MA, US
Christopher J. MacDonald - Medford MA, US
Kamal Tabatabaie Alavi - Sharon MA, US

Assignee:

Raytheon Company - Waltham MA

International Classification:

H01L 23/64
H01L 21/768
H01L 21/324
H01L 23/58

Abstract:

A method and structure, the structure having a substrate, an active device in an active device semiconductor region; of the substrate, a microwave transmission line, on the substrate, electrically connected to the active device, and microwave energy absorbing “dummy” fill elements on the substrate. The method includes providing a structure having a substrate, an active device region on a surface of the structure, an ohmic contact material on the active device region, and a plurality of “dummy” fill elements on the surface to provide uniform heating of the substrate during a rapid thermal anneal process, the ohmic contact material and the “dummy” fill elements having the same radiant energy reflectivity. The rapid thermal anneal processing forms an ohmic contact between an ohmic contact material and the active device region and simultaneously converts the “dummy” fill elements into microwave lossy “dummy” fill elements.

US Patent:

20150111379, Apr 23, 2015

Filed:

Jan 5, 2015

Appl. No.:

14/589251

Inventors:

- Waltham MA, US
Paul M. Ryan - Boston MA, US
Christopher J. MacDonald - Medford MA, US

International Classification:

H01L 21/32
H01L 21/768

US Classification:

438669

Abstract:

A semiconductor structure having a substrate; an active device formed in an active semiconductor region of the substrate, the active device having a control electrode for controlling a flow of carriers through the active semiconductor region between a pair of electrical contacts; and a photolithographic, thickness non-uniformity, compensation feature, disposed on the surface substrate off of the active semiconductor region. In one embodiment the feature comprises pads on the surface of the substrate and off of the active semiconductor region.

US Patent:

20140319586, Oct 30, 2014

Filed:

Apr 26, 2013

Appl. No.:

13/871190

Inventors:

- Waltham MA, US
Paul M. Ryan - Boston MA, US
Christopher J. MacDonald - Medford MA, US

Assignee:

Raytheon Company - Waltham MA

International Classification:

H01L 21/321
H01L 29/78

US Classification:

257288, 438597

Abstract:

A semiconductor structure having a substrate; an active device formed in an active semiconductor region of the substrate, the active device having a control electrode for controlling a flow of carriers through the active semiconductor region between a pair of electrical contacts; and a photolithographic, thickness non-uniformity, compensation feature, disposed on the surface substrate off of the active semiconductor region. In one embodiment the feature comprises pads on the surface of the substrate and off of the active semiconductor region.