Christopher N Robinett

US Patent:

6372658, Apr 16, 2002

Filed:

Sep 21, 1998

Appl. No.:

09/157899

Inventors:

David Ziger - San Antonio TX
Christopher Robinett - San Antonio TX
Ramiro Solis - Bandera TX

Assignee:

Koninklijke Philips Electronics N.V. (KPENV) - Eindhoven

International Classification:

H01L 21302

US Classification:

438725, 430291, 430313

Abstract:

A semiconductor device is manufactured using an ashing process to eliminate the adverse effects of contamination, such as amine-airborne contamination. Consistent with one embodiment of the present invention, the semiconductor device is formed by applying a DUV-type photoresist over the wafer surface, exposing the photoresist to DUV light, baking the wafer, and then ashing the wafer in a highly-oxidized environment to remove insoluble amine-related resist.

US Patent:

58795731, Mar 9, 1999

Filed:

Aug 12, 1997

Appl. No.:

8/909660

Inventors:

Christopher T. Robinett - San Antonio TX

Assignee:

VLSI Technology, Inc. - DE

International Classification:

C23F 102

US Classification:

216 59

Abstract:

An optimal gap is determined between a lower electrode and an upper electrode in a plasma processing device. A gap is set between the lower electrode and the upper electrode, and a substrate is processed in the plasma processing chamber. The processing results are obtained, and the processing rate and uniformity are determined from the processing results. The processing rate and uniformity are plotted with the gap setting. The steps of setting, processing, obtaining, determining, and plotting are repeated for additional substrates, the gap setting being different for each substrate. The optimal gap setting is selected as the gap setting corresponding to an optimal processing rate and an optimal uniformity.

US Patent:

59649801, Oct 12, 1999

Filed:

Jun 23, 1998

Appl. No.:

9/103624

Inventors:

Christopher T. Robinett - San Antonio TX

Assignee:

VLSI Technology, Inc. - San Jose CA

International Classification:

H01L 21306

US Classification:

156345

Abstract:

A processor is provided for an improved semiconductor etching system which generates a series of multi-bit digital output code words. The processor provides an endpoint detector for determining if one of the digital output code word has reached a predetermined endpoint level and for generating a control signal to stop etching of a wafer. The processor further provides a standard endpoint curve corresponding to standard etching of a standard wafer. A normalizer is provided for normalizing the current endpoint curve generated from the series of multi-bit digital code words for a wafer being etched with respect to the standard endpoint curve and for providing a normalized current endpoint curve. A comparator fits and compares the normalized current endpoint curve for a wafer being etched to the standard endpoint curve, where the comparator includes a generator for generating a quality index number for the wafer corresponding to the cumulative area between the normalized current endpoint curve for a wafer being etched and the standard endpoint curve.

US Patent:

63098040, Oct 30, 2001

Filed:

Sep 21, 1998

Appl. No.:

9/157898

Inventors:

David Ziger - San Antonio TX
Christopher Robinett - San Antonio TX

Assignee:

Philips Semiconductor, Inc. - Tarrytown NY

International Classification:

G03F 700

US Classification:

430322

Abstract:

A semiconductor device is manufactured using an acid treatment process to eliminate the adverse effects of contamination, such as amine-airborne contamination. Consistent with one embodiment of the present invention, the semiconductor device is formed by applying a DUV-type photoresist over the wafer surface, exposing the photoresist to DUV light, treating the exposed photoresist with an acid vapor, and thereafter baking the exposed wafer.