Daniel S Queen

US Patent:

20170069819, Mar 9, 2017

Filed:

Nov 16, 2016

Appl. No.:

15/352639

Inventors:

- Arlington VA, US
Daniel R. Queen - Silver Spring MD, US
Frances Hellman - Berkeley CA, US
Thomas H. Metcalf - Washington DC, US
Matthew R. Abernathy - Washington DC, US
Glenn G. Jernigan - Waldorf MD, US

Assignee:

The Government of the United States of America, as represented by the Secretary of the Navy - Arlington VA

International Classification:

H01L 39/24
H01L 39/02

Abstract:

A hydrogen-free amorphous dielectric insulating film having a high material density and a low density of tunneling states. The film is prepared by deposition of a dielectric material on a substrate having a high substrate temperature Tunder high vacuum and at a controlled low deposition rate. In one embodiment, the film is amorphous silicon while in another embodiment the film is amorphous germanium.

US Patent:

20160372651, Dec 22, 2016

Filed:

Sep 6, 2016

Appl. No.:

15/256764

Inventors:

- Arlington VA, US
Thomas H. Metcalf - Washington DC, US
Daniel R. Queen - Silver Spring MD, US
Battogtokh Jugdersuren - Arlington VA, US
Qi Wang - Littleton CO, US
William Nemeth - Wheat Ridge CO, US

Assignee:

The Government of the United States of America, as represented by the Secretary of the Navy - Arlington VA

International Classification:

H01L 35/34
H01L 35/22

Abstract:

A process for forming a doped nc-Si thin film thermoelectric material. A nc-Si thin film is slowly deposited on a substrate, either by hot-wire CVD (HWCVD) with a controlled H:SiHratio R=6-10 or by plasma-enhanced (PECVD) with a controlled R=80-100, followed by ion implantation of an n- or p-type dopant and a final annealing step to activate the implanted dopants and to remove amorphous regions. A doped nc-Si thin film thermoelectric material so formed has both a controllable grain size of from a few tens of nm to 3 nm and a controllable dopant distribution and thus can be configured to provide a thermoelectric material having predetermined desired thermal and/or electrical properties. A final annealing step is used to activate the dopants and remove any residual amorphous regions.

US Patent:

20160247997, Aug 25, 2016

Filed:

Feb 19, 2016

Appl. No.:

15/047671

Inventors:

- Arlington VA, US
Thomas H. Metcalf - Washington DC, US
Daniel R. Queen - Silver Spring MD, US
Battogtokh Jugdersuren - Arlington VA, US
Qi Wang - Littleton CO, US
William Nemeth - Wheat Ridge CO, US

Assignee:

The Government of the United States of America, as represented by the Secretary of the Navy - Arlington VA

International Classification:

H01L 35/34
H01L 35/22

Abstract:

A process for forming a doped nc-Si thin film thermoelectric material. A nc-Si thin film is slowly deposited on a substrate, either by hot-wire CVD (HWCVD) with a controlled H:SiHratio R=6-10 or by plasma-enhanced (PECVD) with a controlled R=80-100, followed by ion implantation of an n- or p-type dopant and a final annealing step to activate the implanted dopants and to remove amorphous regions. A doped nc-Si thin film thermoelectric material so formed has both a controllable grain size of from a few tens of nm to 3 nm and a controllable dopant distribution and thus can be configured to provide a thermoelectric material having predetermined desired thermal and/or electrical properties. A final annealing step is used to activate the dopants and remove any residual amorphous regions.

US Patent:

20150129089, May 14, 2015

Filed:

Nov 12, 2014

Appl. No.:

14/538968

Inventors:

- Washington DC, US
Daniel R. Queen - Silver Spring MD, US
Frances Hellman - Berkeley CA, US

Assignee:

The Government of the United States of America, as represented by the Secretary of the Navy - Washington DC

International Classification:

H01B 3/02
C23C 16/48
H01B 19/04
C23C 14/14
C23C 16/06
C23C 16/24
C23C 14/34
C23C 14/06
C22C 45/00
C23C 16/26

US Classification:

148403, 423348, 423344, 423445 R, 423345, 423439, 423409, 423412, 423299, 423289, 423618, 423384, 423291, 4234151, 423302, 423290, 423400, 423304, 423617, 423278, 423625, 423624, 427596, 42725528, 427597, 4272491, 427250, 2041921

Abstract:

A hydrogen-free amorphous dielectric insulating film having a high material density and a low density of tunneling states is provided. The film is prepared by e-beam deposition of a dielectric material on a substrate having a high substrate temperature Tunder high vacuum and at a low deposition rate. In an exemplary embodiment, the film is amorphous silicon having a density greater than about 2.18 g/cmand a hydrogen content of less than about 0.1%, prepared by e-beam deposition at a rate of about 0.1 nm/sec on a substrate having T=400 C. under a vacuum pressure of 1×10Torr.