Dennis L May

US Patent:

54480850, Sep 5, 1995

Filed:

Aug 11, 1994

Appl. No.:

8/289337

Inventors:

Mark C. Calcatera - Spring Valley OH
Dennis L. May - Novinger MO

Assignee:

The United States of America as represented by the Secretary of the Air
Force - Washington DC

International Classification:

H01L 27085
H01L 2944
H01L 29784

US Classification:

257192

Abstract:

A buried source and drain microwave field effect transistor which provides reduced current density and reduced electric field intensity near the transistor's surface region is disclosed. Operating life and reliability of the transistor are improved by the buried source and drain structure which locates necessary regions of high electrical field intensity and large current density well within the body of the transistor. Comparisons of the buried source and drain field effect transistor with the conventional metal semiconductor field effect transistor are disclosed and include current density, electric field intensity, voltage potentials and I-V curve comparisons. A salient steps fabrication sequence for the buried source and drain field effect transistor is also disclosed.