Dennis E Wagner

US Patent:

60936258, Jul 25, 2000

Filed:

May 20, 1998

Appl. No.:

9/081517

Inventors:

Dennis W. Wagner - Austin TX
Michael T. Wauk - West Sussex, GB
Matthew D. Scotney Castle - Austin TX
Babak Adibi - Santa Clara CA

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

H01L 21425

US Classification:

438514

Abstract:

An apparatus and method for implanting a desired chemical species in a semiconductor substrate. The apparatus comprises a target chamber, a holder to hold a substrate in the target chamber for implantation, a pump to pump the target chamber down to a desired pressure, a pressure lock to enable a substrate to be passed into the target chamber for loading on the holder while the target chamber is at sub-atmospheric pressure, an ion beam generator for generating and directing a beam of ions containing said desired species at a surface of a substrate on said holder, and a reactive gas supply to feed a reactive gas into the target chamber while the chamber is maintained by the pump at the desired pressure, to provide a desired partial pressure of the reactive gas in the target chamber to reactive with and volatilise unwanted contaminants on surfaces in the target chamber.