Abstract:
A multilayer photonic stack comprising a lower plurality of alternating layers comprising at least A and B and an upper plurality of alternating layers comprising at least C and D, layer A comprises at least one of Al, Au, W, Ag, Ni, Ti, Pt, and Cr, layer B comprises at least one of AlO, AlN, MgO, SiO, TiO, SiN, MgF, TaO, SiC, Si, Ge, and Indium Tin Oxide (ITO), and layers C and D comprise at least one of AlO, AlN, MgO, SiO, TiO, SiN, MgF, TaO, SiC, Si, Ge, and Indium Tin Oxide (ITO).