Jeffrey W Baldwin

US Patent:

8174352, May 8, 2012

Filed:

Jun 26, 2009

Appl. No.:

13/000644

Inventors:

Jeevak M. Parpia - Ithaca NY, US
Harold G. Craighead - Ithaca NY, US
Joshua D. Cross - Ithaca NY, US
Bojan Robert Ilic - Ithaca NY, US
Maxim K. Zalalutdinov - Silver Spring MD, US
Jeffrey W. Baldwin - Alexandria VA, US
Brian H. Houston - Fairfax VA, US

Assignee:

Cornell University - Ithaca NY
The United States of America as Represented by the Secretary of the Navy - Washington DC

International Classification:

G01L 1/22

US Classification:

338 2, 7320426, 438200, 257254

Abstract:

A method for manufacturing or preparing thin-film stacks that exhibit moderate, finite, stress-dependent resistance and which can be incorporated into a transduction mechanism that enables simple, effective signal to be read out from a micro- or nano-mechanical structure. As the structure is driven, the resistance of the intermediate layers is modulated in tandem with the motion, and with suitable dc-bias, the motion is directly converted into detectable voltage. In general, detecting signal from MEMS or NEMS devices is difficult, especially using a method that is able to be integrated with standard electronics. The thin-film manufacturing or preparation technique described herein is therefore a technical advance in the field of MEMS/NEMS that could enable new applications as well as the ability to easily develop CMOS-MEMS integrated fabrication techniques. Also disclosed are: (i) transducers where current flows across a piezo layer from one major surface to the opposite major surface; and (ii) methods of making a transducer the resistivity of a piezoresistive layer is decreased and/or the gauge factor of a piezoresistive layer is increased.

US Patent:

20060277588, Dec 7, 2006

Filed:

Jun 1, 2005

Appl. No.:

11/141011

Inventors:

John Harrington - Alexandria VA, US
Alessandro Santarelli - Alexandria VA, US
Jeffrey Baldwin - Fairfax VA, US

Assignee:

Madison Software Inc. - Alexandria VA

International Classification:

H04B 1/20

US Classification:

725135000

Abstract:

A method of making a Web-DVD which integrates computer-based content, such as Web links/HTML content or images, with DVD-Video content by using a graphical user interface (GUI) is disclosed. The method provides a software application that allows a developer to add highly integrated computer-based content, such as, but not limited to, HTML content such as Web site links and images, PDF files and/or Power Point files, to a predetermined DVD-Video content with the developer using the GUI to create a Web-DVD instead of using complex JavaScript or HTML commands or programming language. The software application writes a series of DVD-ROM files, based on the developer's selection, e.g., “point and click,” of the GUI options, that create an interaction between the DVD-Video content and the computer-based content or HTML content.

US Patent:

20080031592, Feb 7, 2008

Filed:

Aug 1, 2006

Appl. No.:

11/461655

Inventors:

John M. Harrington - Alexandria VA, US
Jeffrey M. Baldwin - Fairfax VA, US
Denny C. Breitenfeld - Florham Park NJ, US

International Classification:

H04N 7/00

US Classification:

386 95

Abstract:

The present invention provides methods, computer programs, devices, systems, and storage media for providing new content to existing entertainment media, such as DVDs. The invention supplements or replaces content provided on original entertainment media with new content that is not simply an update of information on the original media, but is yet still related to the original content. The invention provides a small executable file or file set that blends original content with new content delivered from an external source, such as the Internet, through a browser-like environment.

US Patent:

20090206987, Aug 20, 2009

Filed:

Apr 19, 2007

Appl. No.:

12/297489

Inventors:

Keith L. Aubin - Ithaca NY, US
Jeffrey W. Baldwin - Alexandria VA, US
Harold G. Craighead - Ithaca NY, US
Brian H. Houston - Fairfax VA, US
Jeevak M. Parpia - Ithaca NY, US
Robert B. Reichenbach - Portland OR, US
Maxim Zalalutdinov - Silver Springs MD, US

Assignee:

CORNELL UNIVERSITY - Ithaca NY
NAVAL RESEARCH LABORATORY - Washington DC

International Classification:

G06F 7/04

US Classification:

340 58

Abstract:

Methods and systems for object identification and/or authentication.

US Patent:

20100086735, Apr 8, 2010

Filed:

Oct 1, 2009

Appl. No.:

12/571830

Inventors:

Jeffrey W. Baldwin - Fairfax Station VA, US
Maxim K. Zalalutdinov - Silver Spring MD, US
Bradford B. Pate - Arlington VA, US
Brian H. Houston - Fairfax VA, US

International Classification:

B32B 3/10
B05D 3/06

US Classification:

428138, 427551, 427553

Abstract:

A method of functionalizing a nanomechanical resonator involving providing a wafer with a thin film layer on a sacrificial layer, suspending freely a resonator on the wafer, coating the resonator with a liquid containing a terminal allyl group, placing a quartz-mask on the wafer, trapping the liquid between the mask and the wafer, initiating a reaction of the terminal allyl with photo-induced electrons, rinsing the wafer, and drying the wafer. The liquid can be 2-allyl hexafluoroisopropanol or another liquid that has an effective sorbent group for DMMP or DNT. The initiating can be performed via a deep UV source selected from a Hg arc, Xe arc, or DUV laser. The method can further include incorporating narrow gaps of from about 50 to about 300 nm in the resonator.

US Patent:

20110101475, May 5, 2011

Filed:

Jun 26, 2009

Appl. No.:

13/000650

Inventors:

Jeevak M. Parpia - Ithaca NY, US
Harold G. Craighead - Ithaca NY, US
Joshua D. Cross - Ithaca NY, US
Bojan Robert Ilic - Ithaca NY, US
Maxim K. Zalalutdinov - Silver Spring MD, US
Jeffrey W. Baldwin - Alexandria VA, US
Brian H. Houston - Fairfax VA, US

Assignee:

CORNELL UNIVERSITY - Ithaca NY

International Classification:

H01L 29/84
H01L 21/77

US Classification:

257417, 438 50, 257E29324, 257E21598

Abstract:

The present invention is directed to a CMOS integrated micromechanical device fabricated in accordance with a standard CMOS foundry fabrication process. The standard CMOS foundry fabrication process is characterized by a predetermined layer map and a predetermined set of fabrication rules. The device includes a semiconductor substrate formed or provided in accordance with the predetermined layer map and the predetermined set of fabrication rules. A MEMS resonator device is fabricated in accordance with the predetermined layer map and the predetermined set of fabrication rules. The MEMS resonator device includes a micromechanical resonator structure having a surface area greater than or equal to approximately 20 square microns. At least one CMOS circuit is coupled to the MEMS resonator member. The at least one CMOS circuit is also fabricated in accordance with the predetermined layer map and the predetermined set of fabrication rules.

US Patent:

20130248225, Sep 26, 2013

Filed:

Mar 13, 2013

Appl. No.:

13/801495

Inventors:

Bradford B. Pate - Arlington VA, US
Matthew P. Ray - Middleway WV, US
Jeffrey W. Baldwin - Fairfax VA, US

Assignee:

The Government of the United States of America, as represented by the Secretary of the Navy - Washington DC

International Classification:

H05K 3/46

US Classification:

174251, 264400

Abstract:

A method of laser ablation for electrical contact to a buried electrically conducting layer in diamond comprising polishing a single crystal diamond substrate having a first carbon surface, implanting the diamond with a beam of 180 KeV followed by 150 KeV C ions at fluencies of 4×10ions/cmand 5×10ions/cmrespectively, forming an electrically conducting carbon layer beneath the first carbon surface, and ablating the single crystal diamond which lies between the electrically conducting layer and the first carbon surface.

US Patent:

20140080295, Mar 20, 2014

Filed:

Jul 15, 2013

Appl. No.:

13/942257

Inventors:

Jeffrey W. Baldwin - Fairfax VA, US
Bernard R. Matis - Alexandria VA, US
James S. Burgess - Nahsua NH, US
Adam L. Friedman - Silver Spring MD, US
Brian H. Houston - Fairfax VA, US

Assignee:

The Government of the US, as represented by the Secretary of the Navy - Washington DC

International Classification:

H01L 21/02
H01B 5/14
H01B 13/30

US Classification:

438507, 427 968, 252500, 585 16

Abstract:

A method of introducing a bandgap in single layer graphite on a SiOsubstrate comprising the steps of preparing graphene flakes and CVD grown graphene films on a SiO/Si substrate and performing hydrogenation of the graphene. Additionally, controlling the majority carrier type via surface adsorbates.