Jeffrey Y Feng

US Patent:

58516026, Dec 22, 1998

Filed:

Aug 26, 1996

Appl. No.:

8/703582

Inventors:

Kam Law - Union City CA
Robert Robertson - Palo Alto CA
Jeffrey Feng - San Jose CA

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

B05D 306
H01L 21316

US Classification:

427579

Abstract:

A plasma enhanced chemical vapor deposition process for depositing conformal silicon oxide thin films useful to make thin film transistors which have stable electrical properties and low charge centers onto a substrate comprising flowing a precursor gas mixture of silane and nitrous oxide, the latter at a high rate, at a pressure of at least about 0. 8 torr and a temperature of from about 250. degree. to 350. degree. C. The effective volume of the reaction region between the gas manifold inlet and the substrate during processing is kept small.