Jeffrey H Rice

US Patent:

7635637, Dec 22, 2009

Filed:

Jul 25, 2005

Appl. No.:

11/189163

Inventors:

Qi Wang - West Jordan UT, US
Minhua Li - Sandy UT, US
Jeffrey H. Rice - South Jordan UT, US

Assignee:

Fairchild Semiconductor Corporation - South Portland ME

International Classification:

H01L 21/30
H01L 21/46

US Classification:

438458, 438517, 257E21568

Abstract:

Processes used to transfer semiconductor structures from an initial substrate to a base substrate include bonding the initial substrate with a silicon dioxide layer to a doped silicon structure weakened sufficiently by hydrogen implantation for cleaving. After cleaving, a doped silicon layer remains, burying the silicon dioxide layer between the doped silicon layer and the initial substrate. Semiconductor structures are formed within/on an epitaxial layer disposed on the doped silicon layer forming an intermediate semiconductor structure. A process handle is temporarily bonded to the semiconductor structures for support. The initial substrate is thinned and removed by a mechanical thinning process followed by chemical etching using the buried silicon dioxide layer as an etch stop. The silicon dioxide layer is chemically removed from the doped silicon layer. A base substrate is formed on the doped silicon layer.

US Patent:

20100052046, Mar 4, 2010

Filed:

Nov 9, 2009

Appl. No.:

12/614824

Inventors:

Qi Wang - West Jordan UT, US
Minhua Li - Sandy UT, US
Jeffrey H. Rice - South Jordan UT, US

Assignee:

Fairchild Semiconductor Corporation - South Portland ME

International Classification:

H01L 29/78

US Classification:

257329, 257E29257, 257E29262

Abstract:

A semiconductor apparatus includes a metal substrate, a doped silicon layer on the metal substrate, a semiconductor layer overlying the doped silicon layer, and semiconductor structures having one or more p-n junctions at least partially within the semiconductor layer formed by using layering, patterning, and doping steps. In an embodiment, the doped silicon layer comprises a heavily doped silicon layer. In another embodiment, the doped silicon region has a thickness that is less than a thickness of a cleavable region formed by ion implantation. In a specific embodiment, the thickness of the cleavable region is about 1-2 um. In another embodiment, the semiconductor layer has a thickness of approximately 10 um. In another embodiment, the semiconductor structures includes a vertical power MOSFET with the metal substrate configured to be a drain terminal contact region.

US Patent:

20230046399, Feb 16, 2023

Filed:

Oct 26, 2022

Appl. No.:

17/974318

Inventors:

- Orem UT, US
Michael Black - Orem UT, US
R. Stewart Nielson - Pleasant Grove UT, US
Bradley R. Williams - Pocatello ID, US
Benjamin Downard - Draper UT, US
Jeffrey H. Rice - South Jordan UT, US
JIm Pierce - Sandy UT, US

International Classification:

G02B 5/30

Abstract:

A reflective wire grid polarizer (WGP) can include an array of wires on a face of a substrate with channels between adjacent wires The wires can have certain characteristics for WGP performance, such as index of refraction, alternating high/low index continuous thin films, thickness of layer(s), duty cycle, reflective rib shape, a curved side of transparent ribs or aspect ratio, or combinations thereof.

US Patent:

20210018669, Jan 21, 2021

Filed:

Jul 2, 2020

Appl. No.:

16/919513

Inventors:

- Orem UT, US
Michael Black - Oram UT, US
R. Stewart Nielson - Pleasant Grove UT, US
Bradley R. Williams - Pocatello ID, US
Benjamin Downard - Draper UT, US
Jeffrey H. Rice - South Jordan UT, US
Jim Pierce - Sandy UT, US

International Classification:

G02B 5/30

Abstract:

A reflective wire grid polarizer (WGP) can include an array of wires on a face of a substrate , with channels between adjacent wires . The wires can have certain characteristics for WGP performance, such as index of refraction, alternating high/low index continuous thin films, thickness of layer(s), duty cycle, reflective rib shape, a curved side of transparent ribs or , aspect ratio, or combinations thereof.