Jian S Wu from 10664 Bramblecrest Dr, Austin, TX 78726, age 54

Feedback-Based Internet Traffic Regulation For Multi-Service Gateways
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US Patent:

20120215936, Aug 23, 2012
Filed:

Feb 22, 2011
Appl. No.:

13/032256
Inventors:

Xuechen Yang - Austin TX, US
Jian Wu - Austin TX, US
Assignee:

Cisco Technology, Inc. - San Jose CA
International Classification:

G06F 15/16
US Classification:

709235
Abstract:

A method for regulating network traffic may be provided. The method may comprise: measuring usage of a CPU; determining if the CPU usage is greater than an overload threshold value; halting the increase of a data traffic shaping rate associated with traffic regulated by the CPU if the CPU usage is greater than the overload threshold value; determining if the CPU usage is greater than an overflow threshold value; and decreasing the data traffic shaping rate associated with traffic regulated by the CPU if the CPU usage is greater than the overflow threshold value for improving session setup speed.

Memory Device Using Multiple Tunnel Oxide Layers
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US Patent:

20130082228, Apr 4, 2013
Filed:

Sep 30, 2011
Appl. No.:

13/250772
Inventors:

LOUIS PARRILLO - AUSTIN TX, US
RENE MEYER - ATHERTON CA, US
JIAN WU - SAN JOSE CA, US
DAVID EGGLESTON - SAN JOSE CA, US
LIDIA VEREEN - SAN RAMON CA, US
Assignee:

UNITY SEMICONDUCTOR CORPORATION - SUNNYVALE CA
International Classification:

H01L 47/00
US Classification:

257 4, 257E47001
Abstract:

A memory element (ME) including at least one layer of conductive metal oxide (CMO) that includes mobile oxygen ions and including at least two layers of insulating metal oxide (IMO) is disclosed. In one configuration a layer of IMO that is directly in contact with a CMO layer is specifically selected so that a material of the IMO layer is non-reactive with a material of the CMO. In another configuration, at least one pair of adjacent IMO layers are made from materials having different band gaps operative to an generate an internal electric field positioned in the layers and present in the at least two adjacent IMO layers in the absence of electrical power. The internal electric field can be a static electric field. The IMO and/or CMO layers can be deposited in part or in whole using ALD, PEALD, or nano-deposition. The ME can be formed BEOL.