Jing I Lu

US Patent:

6477170, Nov 5, 2002

Filed:

May 21, 1999

Appl. No.:

09/315974

Inventors:

Jing Lu - Sunnyvale CA
Ching Yu - Santa Clara CA

Assignee:

Advanced Micro Devices, Inc. - Sunnyvale CA

International Classification:

H04L 1240

US Classification:

370402, 370428, 375356

Abstract:

A method and apparatus for interfacing a central processing unit to a network switch with an external memory that transfers data to the network switch at a different clock speed than transfers of data to the central processing unit provides an interlocking mechanism to prevent overwriting of data and underflows from occurring. The interlocking of the state machines, accomplished by the idling and advancing of a processor state machine and an external memory state machine, prevents either one of the separate state machines from outrunning the other state machine.

US Patent:

8316797, Nov 27, 2012

Filed:

Jun 16, 2009

Appl. No.:

12/456388

Inventors:

Jes Asmussen - East Lansing MI, US
Timothy Grotjohn - Okemos MI, US
Donnie K. Reinhard - East Lansing MI, US
Thomas Schuelke - Brighton MI, US
M. Kagan Yaran - Lansing MI, US
Kadek W. Hemawan - East Lansing MI, US
Michael Becker - East Lansing MI, US
David King - Lansing MI, US
Yajun Gu - Lansing MI, US
Jing Lu - East Lansing MI, US

Assignee:

Board of Trustees of Michigan State University Fraunhofer USA - East Lansing, Plymouth MI

International Classification:

C23C 16/00
C23F 1/00
H01L 21/306

US Classification:

118723MW, 118723 ME, 118723 MR, 15634535, 15634536, 15634541

Abstract:

New and improved microwave plasma assisted reactors, for example chemical vapor deposition (MPCVD) reactors, are disclosed. The disclosed microwave plasma assisted reactors operate at pressures ranging from about 10 Torr to about 760 Torr. The disclosed microwave plasma assisted reactors include a movable lower sliding short and/or a reduced diameter conductive stage in a coaxial cavity of a plasma chamber. For a particular application, the lower sliding short position and/or the conductive stage diameter can be variably selected such that, relative to conventional reactors, the reactors can be tuned to operate over larger substrate areas, operate at higher pressures, and discharge absorbed power densities with increased diamond synthesis rates (carats per hour) and increased deposition uniformity.

US Patent:

20050010694, Jan 13, 2005

Filed:

Aug 2, 2004

Appl. No.:

10/910002

Inventors:

David Ma - San Jose CA, US
Jing Lu - Santa Clara CA, US

Assignee:

Clarinet Systems, Inc. - Fremont CA

International Classification:

G06F015/16
H04Q007/20

US Classification:

709250000, 709246000

Abstract:

A system and method are provided for uploading photographic data from a wireless device, where the process includes the receiving of a data packet from a mobile phone having digital photograph data and a header configured under a first format with the communication interface, re-configuring the received data packet under a second format with the communication interface, and transmitting the re-configured data packet to a destination device.

US Patent:

20050037779, Feb 17, 2005

Filed:

Aug 19, 2004

Appl. No.:

10/922534

Inventors:

David Ma - San Jose CA, US
Jing Lu - Santa Clara CA, US

Assignee:

Clarinet Systems, Inc. - Fremont CA

International Classification:

H04B007/15

US Classification:

455456600

Abstract:

A system is provided for use in a communication interface for communication between a wireless device and the communication interface to gather local and proximal information. The communication interface is configured to communicate with other devices communicating with a network and configured to facilitate data communication between the wireless device and other devices connected to the network to retrieve and otherwise consume information pertinent to a particular location. A wireless device may then receive a packet having an embedded information address and command from a wireless device that is enabled with a protocol to establish a communication link with an application server, establish a communication link with the application server, retrieve localized information from the application server according to the received embedded command and forward the location related data to the wireless device.

US Patent:

20130069531, Mar 21, 2013

Filed:

Oct 22, 2012

Appl. No.:

13/657366

Inventors:

BOARD OF TRUSTEES OF MICHIGAN STATE U - East Lansing MI, US
FRAUNHOFER USA - Plymouth MI, US
Donnie K. Reinhard - East Lansing MI, US
Thomas Schuelke - Brighton MI, US
M. Kagan Yaran - Lansing MI, US
Kadek W. Hemawan - East Lansing MI, US
Michael Becker - East Lansing MI, US
David King - Lansing MI, US
Yajun Gu - Lansing MI, US
Jing Lu - East Lansing MI, US

Assignee:

FRAUNHOFER USA - Plymouth MI
BOARD OF TRUSTEES OF MICHIGAN STATE UNIVERSITY - East Lansing MI

International Classification:

H05H 1/46

US Classification:

31511121

Abstract:

New and improved microwave plasma assisted reactors, for example chemical vapor deposition (MPCVD) reactors, are disclosed. The disclosed microwave plasma assisted reactors operate at pressures ranging from about 10 Torr to about 760 Torr. The disclosed microwave plasma assisted reactors include a movable lower sliding short and/or a reduced diameter conductive stage in a coaxial cavity of a plasma chamber. For a particular application, the lower sliding short position and/or the conductive stage diameter can be variably selected such that, relative to conventional reactors, the reactors can be tuned to operate over larger substrate areas, operate at higher pressures, and discharge absorbed power densities with increased diamond synthesis rates (carats per hour) and increased deposition uniformity.

US Patent:

20130101730, Apr 25, 2013

Filed:

Oct 22, 2012

Appl. No.:

13/657353

Inventors:

Board of Trustees of Michigan State University - East Lansing MI, US
Fraunhofer USA - Plymouth MI, US
Donnie K. Reinhard - East Lansing MI, US
Thomas Schuelke - Brighton MI, US
M. Kagan Yaran - Lansing MI, US
Kadek W. Hemawan - East Lansing MI, US
Michael Becker - East Lansing MI, US
David King - Lansing MI, US
Yajun Gu - Lansing MI, US
Jing Lu - East Lansing MI, US

Assignee:

FRAUNHOFER USA - Plymouth MI
BOARD OF TRUSTEES OF MICHIGAN STATE UNIVERSITY - East Lansing MI

International Classification:

C23C 16/511

US Classification:

427 9, 427575, 118723 MW

Abstract:

New and improved microwave plasma assisted reactors, for example chemical vapor deposition (MPCVD) reactors, are disclosed. The disclosed microwave plasma assisted reactors operate at pressures ranging from about 10 Torr to about 760 Torr. The disclosed microwave plasma assisted reactors include a movable lower sliding short and/or a reduced diameter conductive stage in a coaxial cavity of a plasma chamber. For a particular application, the lower sliding short position and/or the conductive stage diameter can be variably selected such that, relative to conventional reactors, the reactors can be tuned to operate over larger substrate areas, operate at higher pressures, and discharge absorbed power densities with increased diamond synthesis rates (carats per hour) and increased deposition uniformity.

US Patent:

20140071558, Mar 13, 2014

Filed:

Sep 11, 2012

Appl. No.:

13/609387

Inventors:

Jing Lu - San Jose CA, US
Lei Chen - Sunnyvale CA, US
Johnson Yen - Fremont CA, US

Assignee:

LSI Corporation - Milpitas CA

International Classification:

G11B 5/09

US Classification:

360 49, G9B 5033

Abstract:

A hard disk drive or other storage device comprises a storage medium, a read head configured to read data from the storage medium, and control circuitry coupled to the read head and configured to process data received from the read head. The control circuitry comprises read channel circuitry that includes a low-density parity check decoder or other type of decoder.Power management circuitry associated with the read channel circuitry is configured to detect a power control condition of the read channel circuitry and to control insertion of idle clock cycles in a clock signal supplied to the decoder responsive to the detected power control condition. For example, the read channel circuitry may comprise a clock generator configured to gate the clock signal responsive to a control signal from the power management circuitry.

US Patent:

20200216960, Jul 9, 2020

Filed:

Dec 2, 2019

Appl. No.:

16/700046

Inventors:

- East Lansing MI, US
Jing Lu - East Lansing MI, US
Yajun Gu - Boise ID, US
Shreya Nad - Hillsboro OR, US

International Classification:

C23C 16/511
H01J 37/32
C23C 16/52
C23C 16/27

Abstract:

The disclosure relates to microwave cavity plasma reactor (MCPR) apparatus and associated tuning and process control methods that enable the microwave plasma assisted chemical vapor deposition (MPACVD) of a component such as diamond. Related methods enable the control of the microwave discharge position, size and shape, and enable efficient matching of the incident microwave power into the reactor prior to and during component deposition. Pre-deposition tuning processes provide a well matched reactor exhibiting a high plasma reactor coupling efficiency over a wide range of operating conditions, thus allowing operational input parameters to be modified during deposition while simultaneously maintaining the reactor in a well-matched state. Additional processes are directed to realtime process control during deposition, in particular based on identified independent process variables which can effectively control desired dependent process variables during deposition while still maintaining a well-matched power coupling reactor state.