John A Ott

US Patent:

6350993, Feb 26, 2002

Filed:

Mar 12, 1999

Appl. No.:

09/267323

Inventors:

Jack Oon Chu - Manhasset Hills NY
Richard Hammond - Dobbs Ferry NY
Khalid EzzEldin Ismail - Yorktown Heights NY
Steven John Koester - Ossining NY
Patricia May Mooney - Mt. Kisco NY
John A. Ott - Greenwood Lake NY

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

H01L 2906

US Classification:

257 19, 257 18, 257 20, 257190, 257191, 257192

Abstract:

A method and a layered heterostructure for forming p-channel field effect transistors is described incorporating a plurality of semiconductor layers on a semiconductor substrate, a composite channel structure of a first epitaxial Ge layer and a second compressively strained SiGe layer having a higher barrier or a deeper confining quantum well and having extremely high hole mobility. The invention overcomes the problem of a limited hole mobility for a p-channel device with only a single compressively strained SiGe channel layer.

US Patent:

6475072, Nov 5, 2002

Filed:

Sep 29, 2000

Appl. No.:

09/675841

Inventors:

Donald F. Canaperi - Bridgewater CT
Jack Oon Chu - Manhasset Hills NY
Guy M. Cohen - Mohegan Lake NY
Lijuan Huang - Mountain View CA
John Albrecht Ott - Greenwood Lake NY
Michael F. Lofaro - Marlboro NY

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

B24B 100

US Classification:

451 65, 451285

Abstract:

A method and apparatus is described incorporating a semiconductor substrate, a CMP tool, a brush cleaning tool, and a chemical wafer cleaning tool. The CMP is performed with a down force of 1 psi, a backside air pressure of 0. 5 psi, a platen speed of 50 rpm, a crarrier speed of 30 rpm and a slurry flow rate of 140 milliliters per minute.

US Patent:

6524935, Feb 25, 2003

Filed:

Sep 29, 2000

Appl. No.:

09/675840

Inventors:

Donald F. Canaperi - Bridgewater CT
Jack Oon Chu - Manhasset Hills NY
Christopher P. DEmic - Ossining NY
Lijuan Huang - Tarrytown NY
John Albrecht Ott - Greenwood Lake NY

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

H01L 2136

US Classification:

438478, 438458, 438507, 438479

Abstract:

A method for forming strained Si or SiGe on relaxed SiGe on insulator (SGOI) is described incorporating growing epitaxial Si Ge layers on a semiconductor substrate, implanting hydrogen into a selected Si Ge layer to form a hydrogen-rich defective layer, smoothing surfaces by Chemo-Mechanical Polishing, bonding two substrates together via thermal treatments and separating two substrates at the hydrogen-rich defective layer. The separated substrates may have its upper surface smoothed by CMP for epitaxial deposition of relaxed Si Ge , and strained Si Ge depending upon composition, strained Si, strained SiC, strained Ge, strained GeC, and strained Si Ge C.

US Patent:

6750119, Jun 15, 2004

Filed:

Apr 20, 2001

Appl. No.:

09/838892

Inventors:

Jack Oon Chu - Manhasset Hills NY
Basanth Jagannathan - Stormville NY
Alfred Grill - White Plains NY
Bernard Steele Meyerson - Yorktown Heights NY
John Albrecht Ott - Greenwood Lake NY

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

H01L 2120

US Classification:

438479, 438483, 42725528, 4272491

Abstract:

A method and apparatus for depositing single crystal, epitaxial films of silicon carbon and silicon germanium carbon on a plurality of substrates in a hot wall, isothermal UHV-CVD system is described. In particular, a multiple wafer low temperature growth technique in the range from 350Â C. to 750Â C. is described for incorporating carbon epitaxially in Si and SiGe films with very abrupt and well defined junctions, but without any associated oxygen background contamination. Preferably, these epitaxial SiC and SiGeC films are in-situ doped p- or n-type and with the presence of low concentration of carbon 10 cm , the as-grown p- or n-type dopant profile can withstand furnace anneals to temperatures of 850Â C. and rapid thermal anneal temperatures to 1000Â C.

US Patent:

6805962, Oct 19, 2004

Filed:

Jan 23, 2002

Appl. No.:

10/055138

Inventors:

Stephen W. Bedell - Wappingers Falls NY
Jack O. Chu - Manhasset Hills NY
Keith E. Fogel - Mohegan Lake NY
Steven J. Koester - Ossining NY
Devendra K. Sadana - Pleasantville NY
John Albrecht Ott - Greenwood Lake NY

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

B32B 900

US Classification:

428446, 428450, 428498, 428220, 428336, 428641, 257347, 257349

Abstract:

A method of forming a thin, high-quality relaxed SiGe-on-insulator substrate material is provided which first includes forming a SiGe or pure Ge layer on a surface of a first single crystal Si layer which is present atop a barrier layer that is resistant to the diffusion of Ge. Optionally forming a Si cap layer over the SiGe or pure Ge layer, and thereafter heating the various layers at a temperature which permits interdiffusion of Ge throughout the first single crystal Si layer, the optional Si cap and the SiGe or pure Ge layer thereby forming a substantially relaxed, single crystal SiGe layer atop the barrier layer. Additional SiGe regrowth and/or formation of a strained epi-Si layer may follow the above steps. SiGe-on-insulator substrate materials as well as structures including at least the SiGe-on-insulator substrate materials are also disclosed herein.

US Patent:

6858502, Feb 22, 2005

Filed:

Nov 20, 2001

Appl. No.:

09/989770

Inventors:

Jack Oon Chu - Manhasset Hills NY, US
Richard Hammond - Dobbs Ferry NY, US
Khalid EzzEldin Ismail - Yorktown Heights NY, US
Steven John Koester - Ossining NY, US
Patricia May Mooney - Mt. Kisco NY, US
John A. Ott - Greenwood Lake NY, US

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

H01L021/336

US Classification:

438285, 438172

Abstract:

A method and a layered heterostructure for forming p-channel field effect transistors is described incorporating a plurality of semiconductor layers on a semiconductor substrate, a composite channel structure of a first epitaxial Ge layer and a second compressively strained SiGe layer having a higher barrier or a deeper confining quantum well and having extremely high hole mobility. The invention overcomes the problem of a limited hole mobility for a p-channel device with only a single compressively strained SiGe channel layer.

US Patent:

6908866, Jun 21, 2005

Filed:

Feb 10, 2004

Appl. No.:

10/775515

Inventors:

Jack Oon Chu - Manhasset Hills NY, US
Basanth Jagannathan - Stormville NY, US
Alfred Grill - White Plains NY, US
Bernard Steele Meyerson - Yorktown Heights NY, US
John Albrecht Ott - Greenwood Lake NY, US

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

H01L021/31
H01L021/469

US Classification:

438778, 438479

Abstract:

A method and apparatus for depositing single crystal, epitaxial films of silicon carbon and silicon germanium carbon on a plurality of substrates in a hot wall, isothermal UHV-CVD system is described. In particular, a multiple wafer low temperature growth technique in the range from 350 C. to 750 C. is described for incorporating carbon epitaxially in Si and SiGe films with very abrupt and well defined junctions, but without any associated oxygen background contamination. Preferably, these epitaxial SiC and SiGeC films are in-situ doped p- or n-type and with the presence of low concentration of carbon

US Patent:

7084431, Aug 1, 2006

Filed:

Apr 26, 2004

Appl. No.:

10/832217

Inventors:

Jack Oon Chu - Manhasset Hills NY, US
Richard Hammond - Dobbs Ferry NY, US
Khalid EzzEldin Ismail - Yorktown Heights NY, US
Steven John Koester - Ossining NY, US
Patricia May Mooney - Mt. Kisco NY, US
John A. Ott - Greenwood Lake NY, US

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

H01L 27/15
H01L 29/06

US Classification:

257 79, 257 19

Abstract:

A layered structure for forming electronic devices thereon is provided. The layered structure includes an over-shoot layer, SiGe, within a relaxed SiGelayer, wherein y=X+Z and Z is in the range from 0. 01 to 0. 1 and X is from 0. 35 to 0. 5. The over-shoot layer has a thickness that is less than its critical thickness.