Justin Darrell Jackson

US Patent:

8253168, Aug 28, 2012

Filed:

Jun 29, 2010

Appl. No.:

12/826480

Inventors:

Mark S. Miller - Salt Lake City UT, US
Justin B. Jackson - Salt Lake City UT, US
Divesh Kapoor - Salt Lake City UT, US
Justin Millis - Salt Lake City UT, US

Assignee:

University of Utah Research Foundation - Salt Lake City UT

International Classification:

H01L 29/808

US Classification:

257192, 257279, 257E21448, 438188, 438191

Abstract:

Junction field effect transistors (JFETs) are shown to be a viable replacement for metal oxide semiconductor field effect transistors (MOSFETs) for gate lengths of less than about 40 nm, providing an alternative to the gate leakage problems presented by scaled down MOSFETs. Integrated circuit designs can have complementary JFET (CJFET) logic cells substituted for existing MOSFET-based logic cells to produce revised integrated circuit designs. Integrated circuits can include JFETS where the channel comprises a wide bandgap semiconductor material and the gate comprises a narrow bandgap semiconductor material. Mixtures of JFET and MOSFET transistors can be included on an integrated circuit design.

US Patent:

20080308816, Dec 18, 2008

Filed:

Jun 18, 2008

Appl. No.:

12/141473

Inventors:

Mark S. Miller - Salt Lake City UT, US
Justin B. Jackson - Salt Lake City UT, US
Divesh Kapoor - Salt Lake City UT, US
Justin Millis - Salt Lake City UT, US

Assignee:

University of Utah - Salt Lake City UT

International Classification:

H01L 27/06
G06F 17/50
H01L 21/8232

US Classification:

257 76, 257195, 716 8, 438188, 257E21615, 257E27014

Abstract:

Junction field effect transistors (JFETs) are shown to be a viable replacement for metal oxide semiconductor field effect transistors (MOSFETs) for gate lengths of less than about 40 nm, providing an alternative to the gate leakage problems presented by scaled down MOSFETs. Integrated circuit designs can have complementary JFET (CJFET) logic cells substituted for existing MOSFET-based logic cells to produce revised integrated circuit designs. Integrated circuits can include JFETS where the channel comprises a wide bandgap semiconductor material and the gate comprises a narrow bandgap semiconductor material. Mixtures of JFET and MOSFET transistors can be included on an integrated circuit design.

US Patent:

20120309142, Dec 6, 2012

Filed:

Jul 27, 2012

Appl. No.:

13/560329

Inventors:

Mark S. Miller - Salt Lake City UT, US
Justin B. Jackson - Salt Lake City UT, US
Divesh Kapoor - Salt Lake City UT, US
Justin Millis - Salt Lake City UT, US

Assignee:

The University of Utah Research Foundation - Salt Lake City UT

International Classification:

G06F 17/50
H01L 21/337

US Classification:

438188, 716110, 257E21445

Abstract:

Junction field effect transistors (JFETs) are shown to be a viable replacement for metal oxide semiconductor field effect transistors (MOSFETs) for gate lengths of less than about 40 nm, providing an alternative to the gate leakage problems presented by scaled down MOSFETs. Integrated circuit designs can have complementary JFET (CJFET) logic cells substituted for existing MOSFET-based logic cells to produce revised integrated circuit designs. Integrated circuits can include JFETS where the channel comprises a wide bandgap semiconductor material and the gate comprises a narrow bandgap semiconductor material. Mixtures of JFET and MOSFET transistors can be included on an integrated circuit design.