Lindsey M Hall

Address:

30333 Randall Mnr St, Wesley Chapel, FL 33545

VIN:

1D8GT28K27W606271

Make:

DODGE

Model:

NITRO

Year:

2007

US Patent:

6448182, Sep 10, 2002

Filed:

Nov 22, 1999

Appl. No.:

09/447172

Inventors:

Lindsey Hall - Dallas TX
Jennifer Sees - The Colony TX
Ashutosh Misra - Dallas TX

Assignee:

Texas Instruments Incorporated - Dallas TX

International Classification:

H01L 21302

US Classification:

438692, 438693, 252 791

Abstract:

An embodiment of the instant invention is a method of fabricating an electrical device having a structure overlying a semiconductor substrate which is planarized using chemical mechanical planarization, the method comprising the steps of: forming a layer of material over the semiconductor wafer; polishing the layer of material by subjecting it to a polishing pad and a slurry which includes peroxygen; and wherein the slurry additionally includes a stabilizing agent which retards the decomposition of the peroxygen in the slurry. Preferably, the stabilizing agent is comprised of: pyrophosphoric acids, polyphosphonic acids, polyphosphoric acids, Ethylenediamine Tetraacetic acid, a salt of the pyrophosphoric acids, a salt of the polyphosphonic acids, a salt of the polyphosphoric acids, a salt of the Ethylenediamine Tetraacetic acid and any combination thereof. In addition, the stabilizing agent may be comprised of: sodium pyrophosphate decahydrate, sodium pyrophosphate decahydrate, and/or 8-hydroxyquinoline. The decomposition of the peroxygen in the slurry is catalyzed by transition metals included in the slurry, and may be caused by the pH of the slurry.

US Patent:

7220600, May 22, 2007

Filed:

Dec 17, 2004

Appl. No.:

11/016400

Inventors:

Scott R. Summerfelt - Dallas TX, US
Lindsey H. Hall - Plano TX, US

Assignee:

Texas Instruments Incorporated - Dallas TX

International Classification:

H01G 7/06
H01L 32/00

US Classification:

438 3, 438689, 438240

Abstract:

Methods () are provided for fabricating a ferroelectric capacitor structure including methods () for etching and cleaning patterned ferroelectric capacitor structures in a semiconductor device. The methods comprise etching () portions of an upper electrode, etching () ferroelectric material, and etching () a lower electrode to define a patterned ferroelectric capacitor structure, and etching () a portion of a lower electrode diffusion barrier structure. The methods further comprise ashing () the patterned ferroelectric capacitor structure using a first ashing process, performing () a wet clean process after the first ashing process, and ashing () the patterned ferroelectric capacitor structure using a second ashing process directly after the wet clean process at a high temperature in an oxidizing ambient.

US Patent:

7422968, Sep 9, 2008

Filed:

Jul 29, 2004

Appl. No.:

10/901756

Inventors:

Clint Montgomery - Coppell TX, US
Lindsey Hall - Plano TX, US
Donald Miles - Plano TX, US
Duofeng Yue - Plano TX, US

Assignee:

Texas Instruments Incorporated - Dallas TX

International Classification:

H01L 21/425

US Classification:

438528, 438592, 257E21165

Abstract:

The present invention provides a method for manufacturing a semiconductor device, and a method for manufacturing an integrated circuit including the semiconductor devices. The method for manufacturing a semiconductor device () , among other steps, includes forming a gate structure () over a substrate () and forming source/drain regions () in the substrate () proximate the gate structure (). The method further includes subjecting the gate structure () and substrate () to a dry etch process and placing fluorine in the source/drain regions to form fluorinated source/drains () subsequent to subjecting the gate structure () and substrate () to the dry etch process. Thereafter, the method includes forming metal silicide regions () in the gate structure () and the fluorinated source/drains ().

US Patent:

7723199, May 25, 2010

Filed:

Jan 31, 2007

Appl. No.:

11/669759

Inventors:

Yaw S. Obeng - Frisco TX, US
Scott Robert Summerfelt - Garland TX, US
Sanjeev Aggarwal - Scottsdale AZ, US
Francis Gabriel Celii - Dallas TX, US
Lindsey H. Hall - Plano TX, US
Robert Kraft - Plano TX, US
Theodore S. Moise - Dallas TX, US

Assignee:

Texas Instruments Incorporated - Dallas TX

International Classification:

H01L 21/02

US Classification:

438381, 438 3, 438240, 257E21008

Abstract:

A method of manufacturing a semiconductor device is presented. In one aspect, the method comprises forming conductive and ferroelectric material layers on a semiconductor substrate. The material layers are patterned to form electrodes and a ferroelectric layer of a ferroelectric capacitor, wherein a conductive noble metal-containing polymer is generated on sidewalls of the ferroelectric capacitor. The method also comprises converting the conductive noble metal-containing polymer into a non-conducting metal oxide. Converting includes forming a water-soluble metal salt from the conductive noble metal-containing polymer and reacting the water-soluble metal salt with an acqueous acidic solution to form a metal hydroxide. Converting also includes oxidizing the metal hydroxide to form the non-conducting metal oxide.

US Patent:

62941453, Sep 25, 2001

Filed:

Nov 8, 1994

Appl. No.:

8/336352

Inventors:

Lindsey H. Hall - Dallas TX
Charles R. Schraeder - McKinney TX
Jennifer A. Sees - The Colony TX

Assignee:

Texas Instruments Incorporated - Dallas TX

International Classification:

C01B 508

US Classification:

423513

Abstract:

A method of formulating a strong oxidizing solution comprising formulating a strong oxidizing solution having from about 2 to about 5 percent PDSA with concentrated sulfuric acid in the ratio of from about 1:8 to about 1:20 parts by volume and storing the strong oxidizing solution in a container having a space over the solution containing one of a vacuum or a non-oxidizing atmosphere inert to the oxidizing solution. The amount of PDSA is preferably about 4 percent by volume and the ratio is preferably about 1:10 parts by volume. The space over the strong oxidizing solution is preferably a vacuum or substantially all nitrogen. Hydrogen peroxide can be substituted for the PDSA in which case the method comprises formulating a strong oxidizing solution having from about 40 to about 60 percent hydrogen peroxide with concentrated sulfuric acid in the ratio of from about 1:8 to about 1:20 parts by volume and storing the strong oxidizing solution in a container having a space over the solution containing one of a vacuum or a non-oxidizing atmosphere inert to the oxidizing solution.

US Patent:

60198060, Feb 1, 2000

Filed:

Jan 8, 1998

Appl. No.:

9/004358

Inventors:

Jennifer A. Sees - The Colony TX
Lindsey H. Hall - Dallas TX
Jagdish Prasad - Denton TX
Ashutosh Misra - Denton TX

International Classification:

B24B 100

US Classification:

51308

Abstract:

This invention is for an improved slurry for shallow trench isolation processing in chemical mechanical polishing of semiconductor devices. The oxide/nitride selectivity is enhanced by increasing the pH of the slurry, increasing the solids content of the slurry and/or by adding a fluoride salt to the slurry. With these modifications, selectivity of greater than 10:1 can be attained.

US Patent:

60484063, Apr 11, 2000

Filed:

Apr 8, 1998

Appl. No.:

9/057358

Inventors:

Ashutosh Misra - Dallas TX
Jagdish Prasad - Denton TX
Jennifer A. Sees - The Colony TX
Lindsey H. Hall - Dallas TX

Assignee:

Texas Instruments Incorporated - Dallas TX

International Classification:

C23F 100

US Classification:

134 2

Abstract:

Traditionally, hydrofluoric acid (HF) or buffered bydrofluoric acid (NH. sub. 4 F) is mixed with water to form a etching solution for cleaning silicon dioxide from semiconductor wafer surfaces. An etching solution formed by mixing ammonium hydrogen bifluoride ((NH. sub. 4)HF. sub. 2) with water provides a benign alternative for cleaning silicon dioxide.