Lindsey Lanette Hall

US Patent:

7422968, Sep 9, 2008

Filed:

Jul 29, 2004

Appl. No.:

10/901756

Inventors:

Clint Montgomery - Coppell TX, US
Lindsey Hall - Plano TX, US
Donald Miles - Plano TX, US
Duofeng Yue - Plano TX, US

Assignee:

Texas Instruments Incorporated - Dallas TX

International Classification:

H01L 21/425

US Classification:

438528, 438592, 257E21165

Abstract:

The present invention provides a method for manufacturing a semiconductor device, and a method for manufacturing an integrated circuit including the semiconductor devices. The method for manufacturing a semiconductor device () , among other steps, includes forming a gate structure () over a substrate () and forming source/drain regions () in the substrate () proximate the gate structure (). The method further includes subjecting the gate structure () and substrate () to a dry etch process and placing fluorine in the source/drain regions to form fluorinated source/drains () subsequent to subjecting the gate structure () and substrate () to the dry etch process. Thereafter, the method includes forming metal silicide regions () in the gate structure () and the fluorinated source/drains ().