Linghui G Wu
age ~56
from Austin, TX
- Also known as:
-
- Ling Hui Wu
- Ling H Wu
- Hui Wu Ling
- Wu Linghui
- Phone and address:
- 10821 Straw Flower Dr, Austin, TX 78733
Linghui Wu Phones & Addresses
- 10821 Straw Flower Dr, Austin, TX 78733
- 2817 Cascade Falls Dr, Austin, TX 78738
- Kyle, TX
- Round Rock, TX
- 1907 Woodmar Dr, Houghton, MI 49931
Work
-
Company:Freescale semiconductorNov 2004 to Jul 2013
-
Position:Lithography process development
Education
-
Degree:Doctorates, Doctor of Philosophy
-
School / High School:The University of Texas at Austin2000 to 2002
-
Specialities:Electrical Engineering
Skills
Semiconductors • Silicon • Cmos • Yield • Photolithography • Failure Analysis
Industries
Semiconductors
Resumes
Linghui Wu
view sourceLocation:
Austin, TX
Industry:
Semiconductors
Work:
Freescale Semiconductor Nov 2004 - Jul 2013
Lithography Process Development
Synopsys Nov 2004 - Jul 2013
Pe
Lithography Process Development
Synopsys Nov 2004 - Jul 2013
Pe
Education:
The University of Texas at Austin 2000 - 2002
Doctorates, Doctor of Philosophy, Electrical Engineering The University of Texas at Austin 1996 - 1998
Fudan University
Bachelors, Bachelor of Science, Physics
Doctorates, Doctor of Philosophy, Electrical Engineering The University of Texas at Austin 1996 - 1998
Fudan University
Bachelors, Bachelor of Science, Physics
Skills:
Semiconductors
Silicon
Cmos
Yield
Photolithography
Failure Analysis
Silicon
Cmos
Yield
Photolithography
Failure Analysis
Us Patents
-
Contact For A Non-Volatile Memory And Method Therefor
view source -
US Patent:20130062773, Mar 14, 2013
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Filed:Sep 8, 2011
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Appl. No.:13/227965
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Inventors:GONG CHEN - Austin TX, US
LINGHUI WU - Austin TX, US -
International Classification:H01L 23/48
H01L 21/76 -
US Classification:257774, 257773, 438400, 257E2301, 257E23011, 257E2154
-
Abstract:A semiconductor device is disclosed that comprises a first non-volatile memory cell, a second non-volatile memory cell, an active region between the first and second memory cells, and an electrically conductive contact touching the active region, wherein the contact has a horizontal cross-section that is at least five percent smaller in a first dimension than in a second dimension.
Wu Linghui
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Linghui Wu
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Linghui Wu
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