Michael W Mcallister

US Patent:

8558345, Oct 15, 2013

Filed:

Nov 9, 2009

Appl. No.:

12/614883

Inventors:

Tae Hong Kim - Austin TX, US
Edmund J. Sprogis - Essex Junction VT, US
Michael F. McAllister - Hopewell Junction NY, US
Michael J. Shapiro - Austin TX, US

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

H01L 27/108
H01L 29/94
H01L 23/04
H01L 21/02

US Classification:

257532, 257301, 257698, 257E21396, 257E23057, 257E29346, 438386, 438387

Abstract:

A capacitor in a semiconductor substrate employs a conductive through-substrate via (TSV) as an inner electrode and a columnar doped semiconductor region as an outer electrode. The capacitor provides a large decoupling capacitance in a small area, and does not impact circuit density or a Si3D structural design. Additional conductive TSV's can be provided in the semiconductor substrate to provide electrical connection for power supplies and signal transmission therethrough. The capacitor has a lower inductance than a conventional array of capacitors having comparable capacitance, thereby enabling reduction of high frequency noise in the power supply system of stacked semiconductor chips.