Nancy Phuong Tran

US Patent:

6465159, Oct 15, 2002

Filed:

Jun 28, 1999

Appl. No.:

09/340743

Inventors:

Tuqiang Ni - Fremont CA
Nancy Tran - San Jose CA

Assignee:

Lam Research Corporation - Fremont CA

International Classification:

G03F 736

US Classification:

430314, 430311, 430313, 430317, 216 37, 216 67, 438695, 438710, 438725

Abstract:

A robust method for etching an organic low-k insulating layer on a semiconductor device, as disclosed herein, includes introducing into a processing chamber a substrate with an organic insulating layer and an overlying mask layer having an aperture. A plasma is then developed within the chamber from an oxidizing gas and a passivation gas. The passivation gas is preferably either a silicon containing gas or a boron containing gas, or both. The ratio of the oxidizing gas to the passivation gas is preferably at least 10:1. In addition, an inert carrier gas may be provided. The plasma is then used to etch the organic insulating layer through the mask layer, thereby forming a via having essentially vertical sidewalls in the organic low-k insulating layer.