Nathaniel D Collins

US Patent:

6600211, Jul 29, 2003

Filed:

Jun 18, 2002

Appl. No.:

10/175175

Inventors:

Nathaniel J. Collins - Santa Clara CA

Assignee:

Micron Technology, Inc. - Boise ID

International Classification:

H01L 27082

US Classification:

257565, 257571, 257586

Abstract:

The invention includes a bipolar transistor construction having a collector region, emitter region, and base region extending within a semiconductive material substrate. The construction further comprises separate access regions associated with the base region, emitter region and collector region, respectively. An n-type doped connecting region is comprised by the collector region and extends beneath the emitter and base regions. A p-type doped location is comprised by the base region and extends beneath the emitter region and above the n-type doped connecting region. An n-type doped intermediate location is within the emitter region and between the p-type doped location and the emitter access region. The invention also includes methods of forming bipolar transistors.

US Patent:

6524921, Feb 25, 2003

Filed:

Mar 8, 2002

Appl. No.:

10/094166

Inventors:

Nathaniel J. Collins - Santa Clara CA

Assignee:

Micron Technology, Inc. - Boise ID

International Classification:

H01L 218222

US Classification:

438309, 438338, 438342

Abstract:

The invention includes a bipolar transistor construction having a collector region, emitter region, and base region extending within a semiconductive material substrate. The construction further comprises separate access regions associated with the base region, emitter region and collector region, respectively. An n-type doped connecting region is comprised by the collector region and extends beneath the emitter and base regions. A p-type doped location is comprised by the base region and extends beneath the emitter region and above the n-type doped connecting region. An n-type doped intermediate location is within the emitter region and between the p-type doped location and the emitter access region. The invention also includes methods of forming bipolar transistors.