Ning E Lu

US Patent:

6518679, Feb 11, 2003

Filed:

Dec 15, 2000

Appl. No.:

09/738167

Inventors:

Ning Lu - Essex Junction VT
Wilbur David Pricer - Charlotte VT
Charles Arthur Whiting - Milton VT

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

H01L 23544

US Classification:

257797, 257528, 257532

Abstract:

An alignment structure ( ) and method for aligning a first circuit image region ( ) of a microelectronic chip ( ) with a second circuit region ( ) of a wafer ( ). The alignment structure comprises a plurality of passive coupling elements ( ) attached to the chip and arranged in a linear array and further comprises a plurality of electrodes ( ) attached to the wafer and arranged in a linear array. The electrodes are arranged into a set of first driven electrodes ( ), a set of second driven electrodes ( ) and a set of sensing electrodes ( ). The first driven, second driven and sensing electrodes are arranged alternatingly with one another and may each include one or more plates ( ). The first and second driven electrodes are driven, respectively, with sine wave signals 180 degrees out of phase with one another. When each passive coupling element is centered over a corresponding sensing electrode, the signals from all of the sensing electrodes are null, indicating that the first circuit image region is aligned with the second circuit image region in the alignment direction. In an alternative embodiment, individual electrodes are configurable into different size first driven, second driven and sensing electrodes to adjust the alignment resolution of the alignment structure.

US Patent:

6647137, Nov 11, 2003

Filed:

Jul 10, 2000

Appl. No.:

09/612887

Inventors:

Ning Lu - Essex Junction VT

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

G06K 900

US Classification:

382144, 378 35

Abstract:

A method and structure for determining a range and a shape of a kernel function of a lithographic system which includes exposing, in the lithographic system, a photosensitive layer on a top surface of a substrate through a mask having a mask image, the mask image being of sufficient width to ensure a transferred image will not exhibit foreshortening but will exhibit corner rounding; developing the photosensitive layer to form the transferred image in the photosensitive layer; measuring a distance from an intersection of projected extensions of edges of the transferred image to a point along one edge where corner rounding starts; and defining the range of the kernel function as the measured distance. The projected extension edges are an unaltered version of the mask image overlaid on the transferred image and the foreshortening is a reduction in length of transferred images when compared to the mask image. Corner rounding occurs as a result of light diffraction and photosensitive layer development processes.

US Patent:

6901570, May 31, 2005

Filed:

Mar 12, 2002

Appl. No.:

10/096169

Inventors:

Ning Lu - Essex Junction VT, US

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

G06F017/50

US Classification:

716 6, 703 13

Abstract:

A method of generating optimum skew corner models for a compact device model. A skew corner model refers to a fast or a slow device model, or even a fast-NFET slow-PFET model in which there is no continuos distribution for compact device model parameters. A model parameter's values are set so that the model will reproduce the fast or slow corner results of several circuits performance targets, and wherein each model parameter's value in the skew corner library is within the tolerance range of that model parameters.

US Patent:

7598166, Oct 6, 2009

Filed:

Sep 8, 2006

Appl. No.:

11/530116

Inventors:

Zhong-Xiang He - Essex Junction VT, US
Ning Lu - Essex Junction VT, US
Anthony Kendall Stamper - Williston VT, US

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

H01L 21/4763

US Classification:

438618, 438619, 438622, 438623, 438687, 438781, 257E21273, 257E21293, 257E21576, 257E21581, 257E23144, 257E23161, 257E23167

Abstract:

A semiconductor structure and methods for forming the same. The structure includes (a) a substrate; (b) a first device and a second device each being on the substrate; (c) a device cap dielectric layer on the first and second devices and the substrate, wherein the device cap dielectric layer comprises a device cap dielectric material; (d) a first dielectric layer on top of the device cap dielectric layer, wherein the first dielectric layer comprises a first dielectric material; (e) a second dielectric layer on top of the first dielectric layer; and (f) a first electrically conductive line and a second electrically conductive line each residing in the first and second dielectric layers. The first dielectric layer physically separates the first and second electrically conductive lines from the device cap dielectric layer. A dielectric constant of the first dielectric material is less than that of the device cap dielectric material.

US Patent:

7640143, Dec 29, 2009

Filed:

Nov 3, 2004

Appl. No.:

10/904307

Inventors:

Calvin J. Bittner - Essex Junction VT, US
Steven A. Grundon - Underhill VT, US
Yoo-Mi Lee - Essex Junction VT, US
Ning Lu - Essex Junction VT, US
Josef S. Watts - South Burlington VT, US

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

G06F 17/10
G06F 17/50

US Classification:

703 2, 703 14

Abstract:

A method, system and program product are disclosed for statistical modeling an integrated circuit that provides information about partial correlations between model parameters. The invention determines a variance-covariance matrix for data to be modeled; conducts principal component analysis on the variance-covariance matrix; and creates a statistical model with an independent distribution for each principal component, allowing calculation of each individual model parameter as a weighted sum by a circuit simulator. The statistical model provides information about how well individual transistors will track one another based on layout similarity. This allows the designer to quantify and take advantage of design practices that make all transistors similar, for example, by orienting all gates in the same direction. A method, system and program product for simulating a circuit using the statistical model are also included.

US Patent:

7687574, Mar 30, 2010

Filed:

Apr 30, 2007

Appl. No.:

11/742225

Inventors:

Ning Lu - White Plains NY, US
Anna Maria Czech - Bronxville NY, US
Pat Hoontrakul - Murfreesboro TN, US
John Nicholson - Ramsey NJ, US

Assignee:

Momentive Performance Materials Inc. - Albany NY

International Classification:

C08L 83/12

US Classification:

524588, 528 25, 528 26, 528 27, 528 31

Abstract:

The compositions of the present invention comprise silicone copolymers, terpolymers and higher order polymers that comprise 1) polyether substituted structural units and 2) epoxy or oxirane structural units that are reacted with acrylate species to produce cross linked silicones comprising polyether substituted structural units and acrylate cross links. The cross linked polymers of the present invention are self-emulsifying and may be either water swellable or oil swellable.

US Patent:

7833541, Nov 16, 2010

Filed:

Apr 30, 2007

Appl. No.:

11/742190

Inventors:

Ning Lu - White Plains NY, US
Anna Maria Czech - Bronxville NY, US
Pat Hoontrakul - Murfreesboro TN, US
John Nicholson - Ramsey NJ, US

Assignee:

Momentive Performance Materials Inc. - Albany NY

International Classification:

A61K 8/04

US Classification:

424401, 528 25, 528 26, 528 27, 528 31

Abstract:

The cosmetic compositions of the present invention comprise silicone copolymers, terpolymers and higher order polymers that comprise 1) polyether substituted structural units and 2) epoxy or oxirane structural units that are reacted with acrylate species to produce cross linked silicones comprising polyether substituted structural units and acrylate cross links. The cross linked polymers of the present invention are self-emulsifying and may be either water swellable or oil swellable.

US Patent:

7848907, Dec 7, 2010

Filed:

Jul 26, 2007

Appl. No.:

11/828372

Inventors:

Ning Lu - Essex Junction VT, US

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

G06F 17/10

US Classification:

703 2

Abstract:

A system and method for modeling stochastic behavior of a system of N similar statistical variables using N uncorrelated/independent random model parameters. More particularly, a system and method of modeling device across chip variations and device mismatch. The method includes modeling stochastic behavior of a system of N similar statistical variables using N uncorrelated/independent random model parameters. The method includes providing a system of N similar statistical variables, wherein each stochastic variable has a same standard deviation. The method further includes partially correlating each and every pair of stochastic variables among N variables, wherein a degree of partial correlation is a same for all pairs of variables. A statistical model is constructed to represent a system of N stochastic variables in which only N independent stochastic model parameters are used. A one-to-one mapping relation exists between N model parameters and the N variables.