Paul B Schmidt

US Patent:

40549461, Oct 18, 1977

Filed:

Sep 28, 1976

Appl. No.:

5/727466

Inventors:

Stephen Duncan Ferris - Warren NJ
David Charles Joy - Summit NJ
Harry John Leamy - New Providence NJ
Louis David Longinotti - South Plainfield NJ
Paul Herman Schmidt - Chatham NJ

Assignee:

Bell Telephone Laboratories, Incorporated - Murray Hill NJ

International Classification:

H01J 114
H01J 1906
H01K 104

US Classification:

313346R

Abstract:

An electron source using a single lanthanum hexaboride crystal oriented so the emitting surface is defined by a {110} crystal plane.

US Patent:

45114455, Apr 16, 1985

Filed:

Jun 18, 1982

Appl. No.:

6/389776

Inventors:

Stephen R. Forrest - Chatham NJ
Martin L. Kaplan - Morris Plains NJ
Paul H. Schmidt - Chatham NJ
Thirumalai N. C. Venkatesan - Bridgewater NJ

Assignee:

AT&T Bell Laboratories - Murray Hill NJ

International Classification:

B01J 1908
H01L 2928

US Classification:

204158HE

Abstract:

The conductivity of a wide range of carbon-containing materials is substantially increased by irradiation with particles having an atomic mass of at least 1. Both polymeric and nonpolymeric, organic and inorganic, materials can be used. The particulate irradiation, for example an ion beam, substantially breaks down the material to a form that includes amorphous carbon having unusually high conductivity. Resistivities of less than 10. sup. -3 ohm-cm are possible. When applied as a film on a substrate, the irradiated material can be used for device interconnects. Conducting lines can be produced in the film, as well as vertical contacts through the film.

US Patent:

42005558, Apr 29, 1980

Filed:

Jul 27, 1978

Appl. No.:

5/928528

Inventors:

David C. Joy - Warren NJ
Paul H. Schmidt - Chatham NJ

Assignee:

Bell Telephone Laboratories, Incorporated - Murray Hill NJ

International Classification:

H01B 106

US Classification:

252521

Abstract:

An electron source using an electron emissive material having a composition represented by the nominal atom formula La. sub. x (Nd. sub. y Pr. sub. 1-y). sub. 1-x B. sub. 6 ; x less than 0. 5 and greater than 0. 2, y less than or equal to 1. 0 and greater than or equal to 0. 0, is described. The electron source is well suited for use in instruments such as scanning electron microscopes and electron beam exposure systems.

US Patent:

46113851, Sep 16, 1986

Filed:

Apr 23, 1984

Appl. No.:

6/602700

Inventors:

Stephen R. Forrest - Chatham NJ
Martin L. Kaplan - Morris Plains NJ
Paul H. Schmidt - Chatham NJ

Assignee:

AT&T Bell Laboratories - Murray Hill NJ

International Classification:

H01L 2166
H01L 2928

US Classification:

29574

Abstract:

The use of an organic material having a conjugated ring system such as 3,4,9,10-perylenetetracarboxylic dianhydride interfaced with a semiconductor material such as silicon yields quite acceptable rectifying properties. These properties are used to test the suitability of the substrate during processing. Additionally, these materials upon irradiation change refractive index, allowing production of optical devices such as gratings. The combination of electrical and optical devices formed using these organic materials also allows relatively simple fabrication of integrated opto-electronic structures.

US Patent:

43916570, Jul 5, 1983

Filed:

Jul 17, 1981

Appl. No.:

6/284523

Inventors:

William L. Feldmann - Bernardsville NJ
John M. Rowell - Berkeley Heights NJ
Paul H. Schmidt - Chatham NJ

Assignee:

Bell Telephone Laboratories, Incorporated - Murray Hill NJ

International Classification:

H01L 3924

US Classification:

148133

Abstract:

Niobium-aluminum superconducting wire and other shaped articles are made by heating a precursor body which comprises niobium, an auxiliary element which is more easily oxidizable than aluminum, and aluminum oxide, the aluminum oxide being supported by a surface or a matrix comprising niobium and the auxiliary element. Among suitable auxiliary elements are zirconium, hafnium, scandium, yttrium, and the nonmagnetic rare earths.

US Patent:

44435320, Apr 17, 1984

Filed:

Jul 29, 1981

Appl. No.:

6/288002

Inventors:

David C. Joy - Warren NJ
Martin L. Kaplan - Morris Plains NJ
Paul H. Schmidt - Chatham NJ

Assignee:

Bell Telephone Laboratories, Incorporated - Murray Hill NJ

International Classification:

H01L 2928

US Classification:

430270

Abstract:

Materials that change crystal structure upon radiation with a beam of electrons have been found. These materials, such as perylene dianhydride, naphthalene dianhydride, and perylene tetracarboxylic diimide based compounds undergo a transformation from one crystalline structure to another upon exposure to energetic electrons. This transformation causes a change in optical, electrical, and solubility properties. In this manner, these materials are useful as resists for delineating patterns, as optical storage media, and/or in processes for producing patterns of conductive materials such as employed in semiconductor technology.

US Patent:

40289052, Jun 14, 1977

Filed:

Oct 20, 1975

Appl. No.:

5/623808

Inventors:

Klaus Andres - Berkeley Heights NJ
Paul Herman Schmidt - Chatham NJ

Assignee:

Bell Telephone Laboratories, Incorporated - Murray Hill NJ

International Classification:

F25B 2102
B01J 2310

US Classification:

62 3

Abstract:

As a cryogenic refrigerant in an adiabatic demagnetization refrigerator, the intermetallic compound PrNi. sub. 5 has been used to reach the millidegree Kelvin temperature range. The compound has a relatively large cooling entropy in this range and the specific heat peak, characteristic of materials of this class, occurs well below one millidegree. The material is easily solderable and is incorporated into a "cooling pill" by soldering to the metal wires or foils needed for producing thermal contact to the material to be refrigerated. The use of oriented crystals with their hexagonal axes perpendicular to the applied magnetic field is particularly advantageous. Suitable single phase PrNi. sub. 5 bodies have been produced by annealing bulk melted samples, by Czochralski growth and by an extrusion method.