Qing Wang

US Patent:

6572923, Jun 3, 2003

Filed:

Jan 9, 2002

Appl. No.:

10/042889

Inventors:

Ce Ma - Apex NC
Qing Min Wang - Edison NJ

Assignee:

The BOC Group, Inc. - Murray Hill NJ

International Classification:

C23C 1416

US Classification:

42725527, 427 96, 427 99, 42725518, 42725523, 428447, 438778, 438780, 556460, 528 37

Abstract:

Methods for synthesizing extra low-k CVD precursors and forming extra low-k dielectric films on the surfaces of semiconductors wafers and integrated circuits are disclosed. An asymmetric organocyclosiloxane compound is applied to the surface where it will react with and form a film that will have a dielectric constant, k, from 2. 0 to 2. 5.

US Patent:

7514119, Apr 7, 2009

Filed:

Apr 10, 2006

Appl. No.:

11/400904

Inventors:

Ce Ma - Cary NC, US
Qing Min Wang - Edison NJ, US
Patrick J. Helly - Valley Center CA, US
Richard Hogle - Oceanside CA, US

Assignee:

Linde, Inc. - Murray Hill NJ

International Classification:

C23C 16/00

US Classification:

42725531, 42725528, 42725525

Abstract:

A unique combination of solution stabilization and delivery technologies with special ALD operation is provided. A wide range of low volatility solid ALD precursors dissolved in solvents are used. Unstable solutes may be stabilized in solution and all of the solutions may be delivered at room temperature. After the solutions are vaporized, the vapor phase precursors and solvents are pulsed into a deposition chamber to assure true ALD film growth.

US Patent:

20060071213, Apr 6, 2006

Filed:

Oct 4, 2004

Appl. No.:

10/957791

Inventors:

Ce Ma - Cary NC, US
Qing Wang - Edison NJ, US

International Classification:

H01L 29/12
H01L 21/20

US Classification:

257065000, 438478000, 257616000

Abstract:

The present invention relates generally to a method and means for growing strained or relaxed or graded silicon germanium (SiGe) layers on a semiconductor substrate using a selective epitaxial growth process. In particular, the present invention provides a method for epitaxially growing SiGe layers at temperatures lower than 600 C. by using halogermane and silane precursor materials.

US Patent:

20070077778, Apr 5, 2007

Filed:

Oct 4, 2005

Appl. No.:

11/243157

Inventors:

Ce Ma - Cary NC, US
Qing Wang - Edison NJ, US
Patrick Helly - Valley Center CA, US
Graham McFarlane - Murrieta CA, US

International Classification:

H01L 21/31

US Classification:

438778000, 438780000, 438790000

Abstract:

Dielectric layers having a low dielectric constant are fabricated by using an asymmetric organocyclosiloxane as a precursor gas. The carbon content of the deposited layer is reduced to less than about 50 percent by use an oxidizing agent, a silicon containing compound, or a combination thereof.