Richard G Hendrickson

US Patent:

20040065256, Apr 8, 2004

Filed:

Oct 2, 2003

Appl. No.:

10/678989

Inventors:

Gi Kim - San Jose CA, US
Marbert Moore - Liberty Hill TX, US
Adrian Jansz - Fremont CA, US
David Foote - San Jose CA, US
Richard Hendrickson - Brentwood CA, US
Ken Doering - San Jose CA, US

International Classification:

C23C016/00

US Classification:

118/715000

Abstract:

An improved chemical vapor deposition system including a lid having a channel configured for delivering reactive cleaning gas to the interior of the vapor deposition system. The lid including a cleaning gas distribution channel fluidly connected to a plurality of cleaning gas injection ports. The lid geometry is configured to generate desirable concentration gradients of reactive cleaning gas to the interior of a vapor deposition chamber. In some embodiments, the concentration gradient is selected to compensate for the temperature dependence of cleaning reactions. Methods of using the disclose system are disclosed.