Richard M Hoffman

US Patent:

8288797, Oct 16, 2012

Filed:

Dec 9, 2010

Appl. No.:

12/964529

Inventors:

Paul Cooke - Port Monmouth NJ, US
Richard W. Hoffman - Clinton NJ, US
Victor Labyuk - Hackettstown NJ, US
Sherry Qianwen Ye - Bridgewater NJ, US

Assignee:

Emcore Corporation - Albuquerque NM

International Classification:

H01L 29/66

US Classification:

257197, 257198, 257E21387, 257E27015, 257E29189

Abstract:

A method of fabricating an integrated circuit on a compound semiconductor III-V wafer including at least two different types of active devices by providing a substrate; growing a first epitaxial structure on the substrate; growing a second epitaxial structure on the first epitaxial structure; and processing the epitaxial structures to form different types of active devices, such as HBTs and FETs.

US Patent:

8603248, Dec 10, 2013

Filed:

Feb 10, 2006

Appl. No.:

11/352098

Inventors:

Alex Gurary - Bridgewater NJ, US
Eric A. Armour - Pennington NJ, US
Richard Hoffman - Clinton NJ, US
Jonathan Cruel - Plano TX, US

Assignee:

Veeco Instruments Inc. - Plainview NY

International Classification:

C23C 16/00

US Classification:

118728, 118725

Abstract:

A system and method for evenly heating a substrate placed in a wafer carrier used in wafer treatment systems such as chemical vapor deposition reactors, wherein a first pattern of wafer compartments is provided on the top of the wafer carrier, such as one or more rings of wafer carriers, and a second pattern of inlaid material dissimilar to the wafer carrier material is inlaid on the bottom of the wafer carrier, and the second pattern of inlaid material is substantially the opposite of the first pattern of wafer compartments, such that there are at least as many material interfaces in intermediate regions without wafer compartments as there are in wafer carrying regions with wafers and wafer compartments.

US Patent:

20070071896, Mar 29, 2007

Filed:

Aug 20, 2003

Appl. No.:

10/568794

Inventors:

Michael Murphy - Somerset NJ, US
Richard Hoffman - Clinton NJ, US
Jonathan Cruel - Plano TX, US
Lev Kadinski - Burghausen, DE
Jeffrey Ramer - Sunnyvale CA, US
Eric Armour - Pennington NJ, US

Assignee:

Veeco Instruments Inc. - Woodbury NY

International Classification:

C23C 16/00

US Classification:

427255500, 118715000, 118719000

Abstract:

In a rotating disk reactor () for growing epitaxial layers on substrate (), gas directed toward the substrates at different radial distances from the axis of rotation of the disk has substantially the same velocity. The gas directed toward portions of the disk remote from the axis () may include a higher concentration of a reactant gas () than the gas directed toward portions of the disk close to the axis (), so that portions of the substrate surfaces at different distances from the axis () receive substantially the same amount of reactant gas () per unit area. A desirable flow pattern is achieved within the reactor while permitting uniform deposition and growth of epitaxial layers on the substrate.

US Patent:

20080023725, Jan 31, 2008

Filed:

Jul 28, 2006

Appl. No.:

11/495811

Inventors:

Paul Cooke - Port Monmouth NJ, US
Richard W. Hoffman - Clinton NJ, US
Victor Labyuk - Hackettstown NJ, US
Sherry Qianwen Ye - Bridgewater NJ, US

International Classification:

H01L 31/00

US Classification:

257192

Abstract:

A method of fabricating an epitaxial compound semiconductor III-V wafer suitable for the subsequent fabrication of at least two different types of integrated active devices (such as an HBT and a FET) on such wafer by providing a substrate; growing a first epitaxial structure on the substrate; and growing a second epitaxial structure on the first epitaxial structure.

US Patent:

20080026545, Jan 31, 2008

Filed:

Jul 28, 2006

Appl. No.:

11/494969

Inventors:

Paul Cooke - Port Monmouth NJ, US
Richard W. Hoffman - Clinton NJ, US
Victor Labyuk - Hackettstown NJ, US
Sherry Qianwen Ye - Bridgewater NJ, US

International Classification:

H01L 21/20

US Classification:

438478

Abstract:

A method of fabricating an integrated circuit on a compound semiconductor III-V wafer including at least two different types of active devices by providing a substrate; growing a first epitaxial structure on the substrate; growing a second epitaxial structure on the first epitaxial structure; and processing the epitaxial structures to form different types of active devices, such as HBTs and FETs.

US Patent:

20180237943, Aug 23, 2018

Filed:

Apr 24, 2018

Appl. No.:

15/960785

Inventors:

- Plainview NY, US
Richard Hoffman - Clinton NJ, US
Jonathan Cruel - Plano TX, US
Lev Kadinski - Burghausen, DE
Jeffrey C. Ramer - Sunnyvale CA, US
Eric A. Armour - Pennington NJ, US

International Classification:

C30B 25/14
C23C 16/458
C23C 16/455
C30B 25/16
C23C 16/52
C30B 25/12
C30B 25/08

Abstract:

In a rotating disk reactor for growing epitaxial layers on substrate or other CVD reactor system, gas directed toward the substrates at gas inlets at different radial distances from the axis of rotation of the disk has both substantially the same gas flow rate/velocity and substantially the same gas density at each inlet. The gas directed toward portions of the disk remote from the axis may include a higher concentration of a reactant gas than the gas directed toward portions of the disk close to the axis, so that portions of the substrate surfaces at different distances from the axis receive substantially the same amount of reactant gas per unit area, and a combination of carrier gases with different relative molecular weights at different radial distances from the axis of rotation are employed to substantially make equal the gas density in each region of the reactor. The system may be applied with a combination or carrier gases at multiple gas inlets, a combination of carrier and reactant gases at multiple inlets, and may be used with an arbitrarily large number of gases, when at least two gases of different molecular weights are provided. A linear flow pattern is achieved within the reactor, avoiding laminar recirculation areas, and permitting uniform deposition and growth of epitaxial layers on the substrate.

US Patent:

20140224178, Aug 14, 2014

Filed:

Apr 17, 2014

Appl. No.:

14/255016

Inventors:

- Plainview NY, US
Richard Hoffman - Clinton NJ, US
Jonathan Cruel - Plano TX, US
Lev Kadinski - Burghausen, DE
Jeffrey C. Ramer - Sunnyvale CA, US
Eric A. Armour - Pennington NJ, US

Assignee:

Veeco Instruments Inc. - Plainview NY

International Classification:

C30B 25/12
C30B 25/08

US Classification:

118730, 118715

Abstract:

In a rotating disk reactor () for growing epitaxial layers on substrate (), gas directed toward the substrates at different radial distances from the axis of rotation of the disk has substantially the same velocity. The gas directed toward portions of the disk remote from the axis () may include a higher concentration of a reactant gas () than the gas directed toward portions of the disk close to the axis (), so that portions of the substrate surfaces at different distances from the axis () receive substantially the same amount of reactant gas () per unit area. A desirable flow pattern is achieved within the reactor while permitting uniform deposition and growth of epitaxial layers on the substrate.