Richard A Ross

US Patent:

8558438, Oct 15, 2013

Filed:

Feb 27, 2009

Appl. No.:

12/380439

Inventors:

Scott M. Zimmerman - Basking Ridge NJ, US
Karl W. Beeson - Princeton NJ, US
William R. Livesay - San Diego CA, US
Richard L. Ross - Del Mar CA, US

Assignee:

Goldeneye, Inc. - San Diego CA

International Classification:

H01R 11/30
H01R 11/11

US Classification:

313 51, 313485, 313503, 362581

Abstract:

Reflector designs for a large area panel light source create induced draft cooling means adjacent to the panel light source. The panel light source has a wavelength conversion element on a solid state light source for emitting light of a first and second wavelength to form a broader emission spectrum of light from the panel light source.

US Patent:

8575641, Nov 5, 2013

Filed:

Aug 10, 2012

Appl. No.:

13/572608

Inventors:

Scott M. Zimmerman - Basking Ridge NJ, US
William R. Livesay - San Diego CA, US
Richard L. Ross - Del Mar CA, US
Eduardo DeAnda - San Diego CA, US

Assignee:

Goldeneye, Inc - San Diego CA

International Classification:

H01L 33/64

US Classification:

257 98, 257E33075

Abstract:

Solid state light sources based on LEDs mounted on or within thermally conductive luminescent elements provide both convective and radiative cooling. Low cost self-cooling solid state light sources can integrate the electrical interconnect of the LEDs and other semiconductor devices. The thermally conductive luminescent element can completely or partially eliminate the need for any additional heatsinking means by efficiently transferring and spreading out the heat generated in LED and luminescent element itself over an area sufficiently large enough such that convective and radiative means can be used to cool the device.

US Patent:

8633493, Jan 21, 2014

Filed:

Jul 31, 2009

Appl. No.:

12/462295

Inventors:

Scott M. Zimmerman - Basking Ridge NJ, US
Karl W. Beeson - Princeton NJ, US
William R. Livesay - San Diego CA, US
Richard L. Ross - Del Mar CA, US

Assignee:

Goldeneye, Inc. - San Diego CA

International Classification:

H01L 29/20

US Classification:

257 76, 257E29089

Abstract:

Thin flat crack-free freestanding nitride layers are fabricated by laser patterning of the interface and/or opposing surface of the nitride layer. The nitride layer is substantially flat once removed from the non-native substrate. The thin flat crack free nitride layers are between 3 and 250 microns thick and can have areas greater than 1 cm.

US Patent:

20090140279, Jun 4, 2009

Filed:

Jul 31, 2008

Appl. No.:

12/221304

Inventors:

Scott M. Zimmerman - Basking Ridge NJ, US
Karl W. Beeson - Princeton NJ, US
William R. Livesay - San Diego CA, US
Richard L. Ross - Del Mar CA, US

International Classification:

H01L 33/00

US Classification:

257 98, 257E33023

Abstract:

A light emitting diode (LED) chip has a multilayer semiconductor structure that is at least 10 microns thick and does not require an attached growth substrate or transfer substrate for structural rigidity or support. The multilayer semiconductor structure includes a first doped layer, a second doped layer and an active region interposed between the first doped layer and the second doped layer. Optionally, the multilayer semiconductor structure includes an undoped layer. At least one of the layers of the multilayer semiconductor structure is at least 5 microns thick and is preferably deposited by hydride vapor phase epitaxy.

US Patent:

20090218589, Sep 3, 2009

Filed:

Feb 27, 2009

Appl. No.:

12/380470

Inventors:

Scott M. Zimmerman - Basking Ridge NJ, US
Karl W. Beeson - Princeton NJ, US
William R. Livesay - San Diego CA, US
Richard L. Ross - Del Mar CA, US

International Classification:

H01L 33/00
H01L 29/12

US Classification:

257 99, 257191, 257613, 257712, 257E33066, 257E29068

Abstract:

Thermal boundary resistances within nitride semiconductor LEDs are reduced or eliminated by forming a thick nitride epitaxial layer, which can be separated from a growth substrate, and by reducing the number of thermal boundary layers during laser lift-off. The thermal boundary resistances within nitride semiconductor LEDs can also be reduced or eliminated by forming a plurality of thin nitride epitaxial layers.

US Patent:

20090221106, Sep 3, 2009

Filed:

Feb 27, 2009

Appl. No.:

12/380444

Inventors:

Scott M. Zimmerman - Basking Ridge NJ, US
Karl W. Beeson - Princeton NJ, US
William R. Livesay - San Diego CA, US
Richard L. Ross - Del Mar CA, US

International Classification:

H01L 21/00

US Classification:

438 29, 257E21002

Abstract:

Subtractive and/or additive techniques can adjust both color and/or intensity in solid wavelength conversion materials.

US Patent:

20110024775, Feb 3, 2011

Filed:

Jul 31, 2009

Appl. No.:

12/462277

Inventors:

Scott M. Zimmerman - Basking Ridge NJ, US
Karl W. Beeson - Princeton NJ, US
William R. Livesay - San Diego CA, US
Richard L. Ross - Del Mar CA, US

International Classification:

H01L 29/06
H01L 33/00
H01L 33/02
H01L 31/18
H01L 29/12

US Classification:

257 94, 257183, 438 47, 438 94, 257613, 257629, 257E33005, 257E33013, 257E31032, 257E29068, 257E29005

Abstract:

Surface modification of individual nitride semiconductor layers occurs between growth stages to enhance the performance of the resulting multiple layer semiconductor structure device formed from multiple growth stages. Surface modifications may include, but are not limited, to laser patterning, lithographic patterning (with the scale ranging from 10 microns to a few angstroms), actinic radiation modifications, implantation, diffusional doping and combinations of these methods. The semiconductor structure device has enhanced crystal quality, reduced phonon reflections, improved light extraction, and an increased emission area. The ability to create these modifications is enabled by the thickness of the HVPE growth of the GaN semiconductor layer.

US Patent:

20120261703, Oct 18, 2012

Filed:

Mar 21, 2012

Appl. No.:

13/506015

Inventors:

Scott M. Zimmerman - Basking Ridge NJ, US
William R. Livesay - San Diego CA, US
Richard L. Ross - Del Mar CA, US
Eduardo DeAnda - San Diego CA, US
Chad R. Livesay - Encinitas CA, US

International Classification:

H01L 33/64
H01L 33/50

US Classification:

257 98, 257E33075, 257E33061

Abstract:

A self-cooling emitter is a light emitting element embedded within a thermally conductive luminescent element which functions as a thermal cooling means and wavelength conversion of the light emitting element. The thermally conductive luminescent element exhibits a bulk thermal conductivity greater than W/m/K such that there is sufficient thermal spreading of the heat generated by the light emitting element.