Richard B Stein

US Patent:

44033966, Sep 13, 1983

Filed:

Dec 24, 1981

Appl. No.:

6/334393

Inventors:

Richard J. Stein - Stow MA

Assignee:

GTE Laboratories Incorporated - Waltham MA

International Classification:

H01L 21265
H01L 21302

US Classification:

29571

Abstract:

A method for fabricating a gate-source structure for a recessed-gate static induction transistor. Source impurities are implanted prior to forming the recessed gates. The recessed gates are formed by a first isotropic etching step and a second anisotropic etching step which results in a unique overhanging protective layer used to protect the walls of the grooves during implantation of gate impurities in the bottom of the grooves. Implantations are driven and activated to form gate and source regions, the protective layer is removed and metal deposited to form electrodes. The procedure minimizes the required number of masking steps and associated mask registration problems.

US Patent:

52831540, Feb 1, 1994

Filed:

Apr 1, 1992

Appl. No.:

7/861226

Inventors:

Richard E. Stein - Denver CO

Assignee:

National Printing and Packaging Company - Denver CO

International Classification:

G03F 700

US Classification:

430301

Abstract:

An improved method of making lithographic reproductions is disclosed. The method involves several improvements over prior processes, including (a) the combination of random plates and a waterless, dry press for halftone, duotone, tritone and four color separation halftone printing, and (b) the use, in duotone, tritone and four color separation halftone printing of random plates exclusively for all the plates involved in the multi-step printing process.

Address:

12050 E Utah Pl, Aurora, CO 80012

VIN:

WVWXK7AN4AE148569

Make:

VOLKSWAGEN

Model:

PASSAT

Year:

2010