Robert Vernell Matthews

US Patent:

55803857, Dec 3, 1996

Filed:

Jun 30, 1994

Appl. No.:

8/269414

Inventors:

Ajit P. Paranjpe - Plano TX
Cecil J. Davis - Greenville TX
Robert T. Matthews - Plano TX

Assignee:

Texas Instruments, Incorporated - Dallas TX

International Classification:

C23C 1600

US Classification:

118723I

Abstract:

A plasma processing chamber 10 having an inductively coupled plasma (ICP) source 12 mounted therein. The ICP source 12 comprises an antenna 14 encapsulated in epoxy 16 and surrounded by housing 18. The antenna 14 and epoxy 16 are hermetically sealed from plasma formation region 30. The antenna 14 is powered by at least one RF power supply 40 through at least one RF matching network 42. Dielectric capping plate 28 separates ICP source 12 from the plasma formation region 30 and may have a plurality of holes therein to provide a uniform showerhead distribution of process gases.

US Patent:

53676068, Nov 22, 1994

Filed:

Aug 10, 1993

Appl. No.:

8/056599

Inventors:

Mehrdad M. Moslehi - Dallas TX
Robert Matthews - Plano TX
Cecil J. Davis - Greenville TX

Assignee:

Texas Instruments Incorporated - Dallas TX

International Classification:

H05B 362
H01L 2100

US Classification:

392418

Abstract:

A multi-zone illuminator for processing semiconductor wafers is described which comprises a plurality of source lamps and dummy lamps embedded in the reflector side of a lamp housing. The source lamps are arranged in a plurality of concentric circular zones. The illuminator also comprises plurality of light pipes for receiving multi-point temperature sensors to measure the semiconductor wafer temperature and its distribution uniformity. A gold-plated reflector plate is attached to the bottom side of the lamp housing for reflecting and directing optical energy toward the wafer surface. The distance between the reflector plate and the wafer and the lamps and the wafer may be adjusted with the use of a spacial elevator and adaptor assembly. The multi-zone illuminator allows uniform wafer heating during both transient and steady-state wafer heating cycles.

US Patent:

52862976, Feb 15, 1994

Filed:

Jun 24, 1992

Appl. No.:

7/903637

Inventors:

Mehrdad M. Moslehi - Dallas TX
Cecil J. Davis - Greenville TX
John Jones - Plano TX
Robert T. Matthews - Plano TX

Assignee:

Texas Instruments Incorporated - Dallas TX

International Classification:

C23C 1422

US Classification:

118723E

Abstract:

A multi-electrode plasma processing system (10) provides flexible plasma processing capabilities for semiconductor device fabrication. The plasma processing equipment (10) includes a gas showerhead assembly (52) a radio-frequency chuck (24), and screen electrode (66). The screen electrode (66) includes base (68) for positioning within process chamber (10) and is made of an insulating material such as a ceramic or teflon. A perforated screen (70) is integral to base (68) and generates a plasma from a plasma-producing gas via a radio-frequency power source (104). The screen (70) has numerous passageways (78) to allow interaction of plasma and the process chamber walls. The screen (70) surrounds showerhead assembly (52) and semiconductor wafer (22) and can influence the entire semiconductor wafer plasma processing environment (62) including the plasma density and uniformity. The circuitry (74) electrically connect screen (70) to a power source (100) or (104) to cause screen (70) electrode to affect process plasma density and distribution. Any of the plasma electrodes showerhead assembly (52), chuck (24), or screen electrode (66) may be connected to a low-frequency power source (108), a high-frequency power source (100 or 132), electrical ground (110), or may remain electrically floating (94).

US Patent:

55914934, Jan 7, 1997

Filed:

Jun 7, 1995

Appl. No.:

8/472606

Inventors:

Ajit P. Paranjpe - Plano TX
Cecil J. Davis - Greenville TX
Robert T. Matthews - Plano TX

Assignee:

Texas Instruments Incorporated - Dallas TX

International Classification:

C23C 1600

US Classification:

427569

Abstract:

A plasma processing chamber 10 having an inductively coupled plasma (ICP) source 12 mounted therein. The ICP source 12 comprises an antenna 14 encapsulated in epoxy 16 and surrounded by housing 18. The antenna 14 and epoxy 16 are hermetically sealed from plasma formation region 30. The antenna 14 is powered by at least one RF power supply 40 through at least one RF matching network 42. Dielectric capping plate 28 separates ICP source 12 from the plasma formation region 30 and may have a plurality of holes therein to provide a uniform showerhead distribution of process gases.

US Patent:

52689891, Dec 7, 1993

Filed:

Apr 16, 1992

Appl. No.:

7/870446

Inventors:

Mehrdad M. Moslehi - Dallas TX
Robert Matthews - Plano TX
Cecil J. Davis - Greenville TX

Assignee:

Texas Instruments Incorporated - Dallas TX

International Classification:

C23C 1648
H05B 300
H01L 21324

US Classification:

392418

Abstract:

A multi-zone illuminator for processing semiconductor wafers comprises a plurality of source lamps and dummy lamps embedded in the reflector side of a lamp housing. The source lamps are arranged in a plurality of concentric circular zones. The illuminator also comprises plurality of light pipes for receiving multi-point temperature sensors to measure the semiconductor wafer temperature and its distribution uniformity. A gold-plated reflector plate is attached to the bottom side of the lamp housing for reflecting and directing optical energy toward the wafer surface. The distance between the reflector plate and the wafer and the lamps and the wafer may be adjusted with the use of a spacial elevator and adaptor assembly. The multi-zone illuminator allows uniform wafer heating during both transient and steady-state wafer heating cycles.

US Patent:

54644992, Nov 7, 1995

Filed:

Nov 4, 1993

Appl. No.:

8/147761

Inventors:

Mehrdad M. Moslehi - Dallas TX
Cecil J. Davis - Greenville TX
John Jones - Plano TX
Robert T. Matthews - Plano TX

Assignee:

Texas Instruments Incorporated - Dallas TX

International Classification:

H05H 100

US Classification:

216 71

Abstract:

A multi-electrode plasma processing system (10) provides flexible plasma processing capabilities for semiconductor device fabrication. The plasma processing equipment (10) includes a gas showerhead assembly (52) a radio-frequency chuck (24), and screen electrode (66). The screen electrode (66) includes base (68) for positioning within process chamber (10) and is made of an insulating material such as a ceramic or teflon. A perforated screen (70) is integral to base (68) and generates a plasma from a plasma-producing gas via a radio-frequency power source (104). The screen (70) has numerous passageways (78) to allow interaction of plasma and the process chamber walls. The screen (70) surrounds showerhead assembly (52) and semiconductor wafer (22) and can influence the entire semiconductor wafer plasma processing environment (62) including the plasma density and uniformity. The circuitry (74) electrically connect screen (70) to a power source (100) or (104) to cause screen (70) electrode to affect process plasma density and distribution. Any of the plasma electrodes showerhead assembly (52), chuck (24), or screen electrode (66) may be connected to a low-frequency power source (108), a high-frequency power source (100 or 132), electrical ground (110), or may remain electrically floating (94).

US Patent:

54531241, Sep 26, 1995

Filed:

Jun 17, 1994

Appl. No.:

8/261650

Inventors:

Mehrdad M. Moslehi - Dallas TX
Cecil J. Davis - Greenville TX
Robert T. Matthews - Plano TX

Assignee:

Texas Instruments Incorporated - Dallas TX

International Classification:

C23C 1600

US Classification:

118715

Abstract:

A programmable multizone fluids injector for use in single-wafer semiconductor processing equipment including an injector having a plurality of orifices therein which are divided into a number of separate zones or areas. These zones or areas are connected by means of appropriate passageways and conduits to a source of process fluids. Each of the separate conduits has at least one flow control device located therein for independently controlling the amounts and ratios of process fluids flowing into each zone. The fluid control devices are responsive to input signals so that the fluid flow rates from the orifices can maintain a desired flow pattern within the process chamber to suit the individual needs of a particular fabrication processs.

US Patent:

54468256, Aug 29, 1995

Filed:

Aug 31, 1993

Appl. No.:

8/114550

Inventors:

Mehrdad M. Moslehi - Dallas TX
Cecil J. Davis - Greenville TX
Robert T. Matthews - Plano TX

Assignee:

Texas Instruments Incorporated - Dallas TX

International Classification:

H01L 21324
H01L 21205

US Classification:

392416

Abstract:

A high-performance multi-zone illuminator module (130) for directing optical energy onto a semiconductor wafer (60) in a device fabrication reactor to improve overall semiconductor wafer processing uniformity comprises a housing connectable to the wafer processing reactor and having a bottom side and a reflector mounted to the bottom side. The reflector comprises a plurality of concentric circular zones (190, 192, 194 or 270, 262, 266, 264) for reflecting optical energy that include a plurality of circularly distributed lamp sockets (185). Engaged within the lamp sockets (185) are a plurality of point-source lamps (196) for directing optical energy to the semiconductor wafer (60) surface. The point-source lamps (196) are associated with the reflector (184 and 186 or 276 and 277) for directing light toward the wafer. The lamps are associated within each circular zone to provide an approximately continuous and diffused light ring at the semiconductor wafer (60).