Robert G Mcgrath

US Patent:

6704050, Mar 9, 2004

Filed:

Apr 23, 1999

Appl. No.:

09/298158

Inventors:

William D. Washkurak - Acton MA
Robert Daniel McGrath - Andover MA
Joao Pedro Carreira - St. Maximin, FR

Assignee:

Polaroid Corporation - Waltham MA
Atmel Corporation - San Jose CA

International Classification:

H04N 5335

US Classification:

348294, 348241, 348302, 3482221, 2502081, 257292

Abstract:

An image sensing device comprising active pixels is disclosed, each pixel having a charge accumulation region for collecting charges generated by a photosensitive element such as a photodiode. A linear voltage to current converter, current mirrors, and a differential amplifier generate an output signal and minimize fixed pattern noise and improve the signal to noise ratio. Image quality is improved by reducing pixel blooming and image smearing through an improved method for resetting the pixels with a bias voltage reference which is less than Vdd. Active circuitry and physical device layout reduce the effects of IR voltage drops along the bus lines in a massive pixel array.

US Patent:

20210327952, Oct 21, 2021

Filed:

Nov 21, 2018

Appl. No.:

17/273191

Inventors:

- San Jose CA, US
Robert Daniel McGrath - Lexington MA, US

International Classification:

H01L 27/148
H01L 27/146

Abstract:

A system is provided for time delay integration in complementary metal oxide semiconductor imaging sensors, the system comprising: a two dimensional parallel charge transfer structure comprising at least one column of CMOS Image sensor pinned photodiodes; each the diode in the column being connected to the next the diode by a two phase transfer gate, each the transfer gate having a barrier and a well configured such that a flow of charge in the column is unidirectional.

US Patent:

20200161374, May 21, 2020

Filed:

Nov 21, 2018

Appl. No.:

16/198247

Inventors:

- San Jose CA, US
Robert Daniel McGrath - Lexington MA, US

Assignee:

BAE Systems Imaging Solutions Inc. - San Jose CA

International Classification:

H01L 27/30
H01L 27/146

Abstract:

A pixel, is provided the pixel comprising: a photodiode structure built on top of an integrated circuit generating a charge; the integrated circuit comprising at least one semiconductor material and at least one interconnect layer; the at least one interconnect layer comprises an interconnect to facilitate charge flowing into a collection node disposed in the semiconductor material; the interconnect being in contact with a doped contact diffusion disposed proximate to the collection node; a transfer transistor disposed between the collection node and a conversion node, the conversion node coupled to an active transistor; the pixel having a reset configured to reset the conversion node.