Robert John O'Donnell

US Patent:

6852636, Feb 8, 2005

Filed:

Dec 27, 1999

Appl. No.:

09/472757

Inventors:

Robert J. O'Donnell - Fremont CA, US

Assignee:

Lam Research Corporation - Fremont CA

International Classification:

H01L021/302
H01L021/3065

US Classification:

438706, 438710, 438712, 438720

Abstract:

A method for performing a metallic etch, etch mask stripping, and removal of residual sidewall passivation in a single etch chamber. A wafer is placed in an etch chamber. A metal etch is performed on the wafer. A stripping gas, such as a mixture of oxygen and argon is provided to the etch chamber and is energized to form an oxygen plasma. The oxygen plasma strips the etch mask from the wafer and removes residual sidewall passivation. The oxygen plasma also cleans the etch chamber.

US Patent:

6988326, Jan 24, 2006

Filed:

Sep 30, 2004

Appl. No.:

10/957384

Inventors:

Robert J. O'Donnell - Fremont CA, US
Thomas W. Anderson - Livermore CA, US

Assignee:

Lam Research Corporation - Fremont CA

International Classification:

F26B 21/06

US Classification:

34381, 34 79

Abstract:

In one of the many embodiments, a method for processing a substrate is provided which includes generating a first fluid meniscus and a second fluid meniscus on a surface of the substrate where the first fluid meniscus being substantially adjacent to the second fluid meniscus. The meniscus also includes substantially separating the first fluid meniscus and the second fluid meniscus with a barrier.

US Patent:

7093375, Aug 22, 2006

Filed:

Sep 30, 2004

Appl. No.:

10/956799

Inventors:

Robert J. O'Donnell - Fremont CA, US

Assignee:

Lam Research Corporation - Fremont CA

International Classification:

F26B 21/06

US Classification:

34 79, 34 92

Abstract:

An apparatus for processing a substrate is provided which includes a proximity head proximate to a surface of the substrate when in operation. The apparatus also includes an opening on a surface of the proximity head to a cavity defined in the proximity head where the cavity delivers an active agent to the surface of the substrate through the opening. The apparatus further includes a plurality of conduits on the surface of the proximity head that generates a fluid meniscus on the surface of the substrate surrounding the opening.

US Patent:

7128804, Oct 31, 2006

Filed:

Dec 29, 2000

Appl. No.:

09/749921

Inventors:

Robert J. O'Donnell - Alameda CA, US
Christopher C. Chang - Sunnyvale CA, US
John E. Daugherty - Alameda CA, US

Assignee:

Lam Research Corporation - Fremont CA

International Classification:

H01L 21/306

US Classification:

15634533, 15634537, 15634547, 15634551

Abstract:

A corrosion resistant component of a plasma chamber includes a liquid crystalline polymer. In a preferred embodiment, the liquid crystalline polymer (LCP) is provided on an aluminum component having an anodized or non-anodized surface. The liquid crystalline polymer can also be provided on an alumina component. The liquid crystalline polymer can be deposited by a method such as plasma spraying. The liquid crystalline polymer may also be provided as a preformed sheet or other shape adapted to cover the exposed surfaces of the reaction chamber. Additionally, the reactor components may be made entirely from liquid crystalline polymer by machining the component from a solid block of liquid crystalline polymer or molding the component from the polymer. The liquid crystalline polymer may contain reinforcing fillers such as glass or mineral fillers.

US Patent:

7255898, Aug 14, 2007

Filed:

May 22, 2003

Appl. No.:

10/442980

Inventors:

Robert J. O'Donnell - Alameda CA, US
Christopher C. Chang - Sunnyvale CA, US
John E. Daugherty - Alameda CA, US

Assignee:

Lam Research Corporation - Fremont CA

International Classification:

B05D 1/02
C23C 16/40

US Classification:

427422, 42725519

Abstract:

A corrosion resistant component of semiconductor processing equipment such as a plasma chamber comprises zirconia toughened ceramic material as an outermost surface of the component. The component can be made entirely of the ceramic material or the ceramic material can be provided as a coating on a substrate such as aluminum or aluminum alloy, stainless steel, or refractory metal. The zirconia toughened ceramic can be tetragonal zirconia polycrystalline (TZP) material, partially-stabilized zirconia (PSZ), or a zirconia dispersion toughened ceramic (ZTC) such as zirconia-toughened alumina (tetragonal zirconia particles dispersed in AlO). In the case of a ceramic zirconia toughened coating, one or more intermediate layers may be provided between the component and the ceramic coating. To promote adhesion of the ceramic coating, the component surface or the intermediate layer surface may be subjected to a surface roughening treatment prior to depositing the ceramic coating.

US Patent:

7270760, Sep 18, 2007

Filed:

Oct 4, 2005

Appl. No.:

11/244335

Inventors:

Gregory J. Goldspring - Alameda CA, US
Robert J. O'Donnell - Fremont CA, US

Assignee:

Lam Research Corporation - Fremont CA

International Classification:

H01L 21/00

US Classification:

216 59, 216 41, 216 79, 438 14, 438689

Abstract:

A method and apparatus are provided for simulating a standard wafer in semiconductor manufacturing equipment. The apparatus includes a support layer suitable for being handled by the semiconductor manufacturing equipment. Applied to the support layer is a mixture including a process agent and a material. During use, the present invention simulates a standard production wafer including material similar to that in the mixture of the present invention.

US Patent:

7300537, Nov 27, 2007

Filed:

Dec 2, 2004

Appl. No.:

11/000894

Inventors:

Robert J. O'Donnell - Fremont CA, US
John E. Daugherty - Newark CA, US

Assignee:

Lam Research Corporation - Fremont CA

International Classification:

H01L 21/00
C23C 16/00

US Classification:

15634551, 15634552, 15634553, 118724, 118725, 118726, 20429801, 216 67

Abstract:

Components of semiconductor processing apparatus comprise thermal sprayed yttria-containing coatings that provide erosion, corrosion and/or corrosion-erosion resistance in plasma atmospheres. The coatings can protect substrates from physical and/or chemical attack.

US Patent:

7311797, Dec 25, 2007

Filed:

Jun 27, 2002

Appl. No.:

10/180504

Inventors:

Robert J. O'Donnell - Fremont CA, US
John E. Daugherty - Newark CA, US

Assignee:

Lam Research Corporation - Fremont CA

International Classification:

H01L 21/00
C23C 16/00

US Classification:

15634551, 15634552, 15634553, 118724, 118725, 118726, 20429801

Abstract:

Components of semiconductor processing apparatus comprise thermal sprayed yttria-containing coatings that provide erosion, corrosion and/or corrosion-erosion resistance in plasma atmospheres. The coatings can protect substrates from physical and/or chemical attack.