Ronald L Stevens

US Patent:

6465761, Oct 15, 2002

Filed:

Jul 23, 2001

Appl. No.:

09/911212

Inventors:

Ronald R. Stevens - San Ramon CA
Eric Shero - Phoenix AZ
Ravinder K. Aggarwal - Gilbert AZ
Michael W. Halpin - Scottsdale AZ

Assignee:

ASM America, Inc. - Phoenix AZ

International Classification:

F27B 514

US Classification:

219411, 219390, 219405, 118725, 118501, 392411, 392416

Abstract:

A reactor chamber is positioned between a top array of heat lamps and a bottom array of heat lamps. At least one of the heat lamps forming the top and bottom arrays features a segmented filament such that power output along the length of the heat lamp differs. In one configuration, the heat lamp has a pair of high energy output regions spaced from each other by a lower energy output region. In some configurations, at least one of the heat lamps forming the top and bottom arrays is non-linear, such as U-shaped. In further configurations, a non-linear heat lamp has a segmented filament with segments or areas of different winding density.

US Patent:

7781016, Aug 24, 2010

Filed:

Aug 23, 2006

Appl. No.:

11/508375

Inventors:

Ronald Stevens - San Ramon CA, US
Brendan McDougall - Livermore CA, US
Jacob W. Smith - Santa Clara CA, US
Garry Kwong - San Jose CA, US
Sandeep Nijhawan - Los Altos CA, US
Lori D. Washington - Union City CA, US

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

C23C 16/00

US Classification:

4272481, 427252, 42725514, 42725523, 42725528, 118688, 118692, 118726, 118715

Abstract:

Methods are disclosed of determining a fill level of a precursor in a bubbler. The bubbler is fluidicly coupled with a substrate processing chamber through a vapor-delivery system. The bubbler and vapor-delivery system are backfilled with a known dose of a backfill gas. A pressure and temperature of the backfill gas are determined, permitting a total volume for the backfill gas in the bubbler and vapor-delivery system to be determined by application of a gas law. The fill level of the precursor in the bubbler is determined as a difference between (1) a total volume of the bubbler and vapor-delivery system and (2) the determined total volume for the backfill gas.

US Patent:

20050188923, Sep 1, 2005

Filed:

Oct 15, 2004

Appl. No.:

10/966245

Inventors:

Robert Cook - Pleasanton CA, US
Ronald Stevens - San Ramon CA, US
Peter Schwartz - Livemore CA, US
Cesar Tejamo - Stockton CA, US
Vebjorn Nilsen - Dublin CA, US
Gabriel Ormonde - Lathrop CA, US
Ajit Paranjpe - Fremont CA, US
Somnath Nag - Saratoga CA, US
Michael Patten - Fremont CA, US

International Classification:

C23C016/00

US Classification:

118728000

Abstract:

A substrate carrier for a parallel wafer processing reactor supports a plurality of substrates. The substrate carrier includes a plurality of susceptors, which may be thermal plates or annular rings that are arranged horizontally in a vertical stack. The substrates are mounted between pairs of susceptors on two or more supports provided around the outer periphery of the susceptors. The number of substrates mounted between each pair of susceptors may the same or different but is two or more between at least one pair of susceptors.

US Patent:

20090095221, Apr 16, 2009

Filed:

Oct 16, 2007

Appl. No.:

11/873170

Inventors:

Alexander TAM - Union City CA, US
Ronald STEVENS - San Ramon CA, US
Jacob GRAYSON - Santa Clara CA, US
David BOUR - Cupertino CA, US
Sandeep NIJHAWAN - Los Altos CA, US

International Classification:

C23C 16/54

US Classification:

118715

Abstract:

A method and apparatus that may be utilized for chemical vapor deposition and/or hydride vapor phase epitaxial (HVPE) deposition are provided. In one embodiment, a metal organic chemical vapor deposition (MOCVD) process is used to deposit a Group III-nitride film on a plurality of substrates. A Group III precursor, such as trimethyl gallium, trimethyl aluminum or trimethyl indium and a nitrogen-containing precursor, such as ammonia, are separately delivered to a plurality of concentric gas injection ports. The precursor gases are injected into mixing zones where the gases are mixed before entering a processing volume containing the substrates.

US Patent:

20120231182, Sep 13, 2012

Filed:

Mar 10, 2012

Appl. No.:

13/417226

Inventors:

Ronald Stevens - San Ramon CA, US
Gabriel Ormonde - Lathrop CA, US
James Mitchener - Danville CA, US

Assignee:

KAIATECH, INC. - Danville CA

International Classification:

C23C 16/50
C23C 16/24
A61L 2/14
C23C 16/06

US Classification:

427576, 427569, 427579, 118723 E, 422186, 422 22

Abstract:

An apparatus for treating the interior of containers includes a chamber for holding a container and provides precursor materials via an annulus formed by coaxially arranged electrodes at which plasma is created upon application of voltage and the container is treated.

US Patent:

20220189809, Jun 16, 2022

Filed:

Mar 31, 2021

Appl. No.:

17/218697

Inventors:

- Fremont CA, US
Ronald R. Stevens - Pleasanton CA, US
Craig W. McCoy - San Jose CA, US
Charudatta Galande - Fremont CA, US
Gabriel Ormonde - Lathrop CA, US

Assignee:

Yield Engineering Systems, Inc. - Fremont CA

International Classification:

H01L 21/677

Abstract:

A batch processing oven comprising a processing chamber and a rack configured to be positioned in the processing chamber. The rack is configured to support a plurality of substrates and a plurality of panels in a stacked manner such that one or more substrates of the plurality of substrates are positioned between at least one pair of adjacent panels of the plurality panels. Vertical gaps separate each substrate of the one or more substrates from an adjacent substrate or panel on either side of the substrate.

US Patent:

20210121590, Apr 29, 2021

Filed:

Dec 31, 2020

Appl. No.:

17/139036

Inventors:

- Fremont CA, US
Ronald Stevens - Pleasanton CA, US
Kenneth Twain - Oakland CA, US
Craig Galloway - Hillsborough NC, US
Michelle (Meng) Shi - San Jose CA, US
James Mitchener - Danville CA, US

International Classification:

A61L 2/14
C23C 16/50
C23C 16/44
C23C 16/455
B08B 7/00
B08B 9/20
A61L 2/26
H01J 37/32

Abstract:

The invention provides an apparatus for treating surfaces of a container. The apparatus comprises an openable reaction chamber housing, an exhaust escapement and an electrode assembly. The electrode assembly comprises a probe assembly coupled with a power source, the probe assembly comprising an elongate wand body, and a helically configured primary electrode and a helically configured counter electrode disposed about an outer circumferential surface of the wand body in an alternating helical configuration. The elongate wand body has a fluid passageway defined therewithin, and one or more outlet openings that are formed on an outer circumferential surface of the wand body and that extend inward through said outer circumferential surface and upto the fluid passageway. One or both of the primary electrode and the counter electrode may be energizable by the power source.