Rudy A Garcia

US Patent:

7304302, Dec 4, 2007

Filed:

Aug 29, 2005

Appl. No.:

11/215745

Inventors:

Peter Nunan - Monte Sereno CA, US
Muhran Nasser-Ghodsi - Hamilton MA, US
Mark Borowicz - San Jose CA, US
Rudy F. Garcia - Union City CA, US
Tzu Chin Chuang - Cupertino CA, US
Herschel Marchman - San Jose CA, US
David Soltz - San Jose CA, US

Assignee:

KLA-Tencor Technologies Corp. - Milpitas CA

International Classification:

H01J 37/21

US Classification:

250311, 2504431, 250397, 250306, 250310, 356 36

Abstract:

Various systems configured to reduce distortion of a resist during a metrology process are provided. The systems include an electron beam metrology tool configured to measure one or more characteristics of one or more resist features formed on a specimen. The electron beam metrology tool may be configured as a scanning electron microscope. The resist may be designed for exposure at a wavelength of about 193 nm. One system includes a cooling subsystem configured to alter a temperature of the specimen during measurements by the tool such that the resist feature(s) are not substantially distorted during the measurements. Another system includes a drying subsystem that is configured to reduce moisture proximate the specimen during measurements by the electron beam metrology tool such that the resist feature(s) are not substantially distorted during the measurements. An additional system may include both the cooling subsystem and the drying subsystem.

US Patent:

7394339, Jul 1, 2008

Filed:

Jun 30, 2004

Appl. No.:

10/882663

Inventors:

Alexander Jozef Gubbens - Redwood City CA, US
Niles Kenneth MacDonald - San Jose CA, US
Mehran Nasser-Ghodsi - Hamilton MA, US
Rudy Flores Garcia - Union City CA, US
Doug Keith Masnaghetti - Union City CA, US

Assignee:

KLA-Tencor Technologies Corporation - Milpitas CA

International Classification:

H01F 7/02

US Classification:

335306, 210222

Abstract:

A voltage-isolating passageway for providing high voltage isolation between a component maintained at high DC voltage and a component maintained at a substantially lower voltage is described. The voltage-isolating passageway incorporates a transverse magnetic field across its passageway, which reduces the potential energy of charged particles (e. g. , electrons) passing through the passageway. The voltage-isolating passageway includes a passageway and at least two magnets. The passageway has two openings and the two magnets are positioned along opposite and exterior surfaces of the passageway wherein the first and second magnets impose a magnetic field in a transverse direction with respect to a lengthwise axis of the passageway. In one embodiment, each of the passageways have small diameters and transfer gases at small flow rates. A support structure secures the passageways and magnets in position relative to each other and a magnetic shield encases the components to prevent the magnetic field from affecting external components.

US Patent:

7612348, Nov 3, 2009

Filed:

May 22, 2008

Appl. No.:

12/125863

Inventors:

Alexander Jozef Gubbens - Redwood City CA, US
Niles Kenneth MacDonald - San Jose CA, US
Mehran Nasser-Ghodsi - Hamilton MA, US
Rudy Flores Garcia - Union City CA, US
Doug Keith Masnaghetti - San Jose CA, US

Assignee:

KLA-Technologies Corporation - Milpitas CA

International Classification:

H01J 37/18
H01F 7/02

US Classification:

25044111, 15634529, 335210, 335306

Abstract:

A voltage-isolating passageway for providing high voltage isolation between a component maintained at high DC voltage and a component maintained at a substantially lower voltage is described. The voltage-isolating passageway incorporates a transverse magnetic field across its passageway, which reduces the potential energy of charged particles (e. g. , electrons) passing through the passageway. The voltage-isolating passageway includes a passageway and at least two magnets. The passageway has two openings and the two magnets are positioned along opposite and exterior surfaces of the passageway wherein the first and second magnets impose a magnetic field in a transverse direction with respect to a lengthwise axis of the passageway. In one embodiment, each of the passageways have small diameters and transfer gases at small flow rates. A support structure secures the passageways and magnets in position relative to each other and a magnetic shield encases the components to prevent the magnetic field from affecting external components.

US Patent:

7755042, Jul 13, 2010

Filed:

May 21, 2008

Appl. No.:

12/124407

Inventors:

Gabor D. Toth - San Jose CA, US
Rudy F. Garcia - Union City CA, US
Chris Huang - Cupertino CA, US
Niles Kenneth MacDonald - San Jose CA, US
Mehran Nasser-Ghodsi - Hamilton MA, US
Garrett Pickard - Mt. View CA, US
Khashayar Shadman - Mt. View CA, US
Ming Yu - Fremont CA, US

Assignee:

KLA-Tencor Corporation - San Jose CA

International Classification:

H01J 37/05

US Classification:

250305, 250306, 250307, 250310

Abstract:

A scanning electron beam apparatus with an Auger spectrometer. The apparatus includes at least an electron column for generating a primary electron beam, a magnetic objective lens configured to focus the primary electron beam onto a surface of a target substrate, and a spectrometer configured to detect Auger electrons emitted from the surface of the target substrate. The magnetic objective lens applies a magnetic field strength greater than 10 Gauss and less than 50 Gauss at the surface of the target substrate. Other embodiments, aspects and features are also disclosed.

US Patent:

7879730, Feb 1, 2011

Filed:

Jan 12, 2007

Appl. No.:

11/622605

Inventors:

Garrett Pickard - Mountain View CA, US
Rudy F. Garcia - Union City CA, US
Tzu-Chin Chuang - Cupertino CA, US
Ming Lun Yu - Fremont CA, US
Kenneth Krzeczowski - Scotts Valley CA, US
Matthew Lent - Livermore CA, US
Sergey Lopatin - Morgan Hill CA, US
Chris Huang - Cupertino CA, US
Niles K. MacDonald - San Jose CA, US

Assignee:

KLA-Tencor Technologies Corporation - Milpitas CA

International Classification:

H01L 21/302
H01L 21/461

US Classification:

438706, 438710, 438711, 438714, 216 12, 216 21, 216 62

Abstract:

Etch selectivity enhancement during electron beam activated chemical etch (EBACE) is disclosed. A target or portion thereof may be exposed to a gas composition of a type that etches the target when the gas composition and/or target are exposed to an electron beam. By directing an electron beam toward the target in the vicinity of the gas composition, an interaction between the electron beam and the gas composition etches a portion of the target exposed to both the gas composition and the electron beam. Selectivity of etching of the target due to interaction between the electron beam and gas composition may be enhanced in a number of ways.

US Patent:

8052885, Nov 8, 2011

Filed:

Jan 12, 2007

Appl. No.:

11/622625

Inventors:

Garrett Pickard - Mountain View CA, US
Rudy F. Garcia - Union City CA, US
Ming Lun Yu - Fremont CA, US
Kenneth Krzeczowski - Scotts Valley CA, US
Matthew Lent - Livermore CA, US
Sergey Lopatin - Morgan Hill CA, US
Chris Huang - Cupertino CA, US
Niles K. MacDonald - San Jose CA, US

Assignee:

KLA-Tencor Corporation - San Jose CA

International Classification:

B44C 1/22
C03C 15/00
C03C 25/68
C23F 1/00
H01L 21/302
H01L 21/461

US Classification:

216 58, 438706

Abstract:

Structural modification using electron beam activated chemical etch (EBACE) is disclosed. A target or portion thereof may be exposed to a gas composition of a type that etches the target when the gas composition and/or target are exposed to an electron beam. By directing an electron beam toward the target in the vicinity of the gas composition, an interaction between the electron beam and the gas composition etches a portion of the target exposed to both the gas composition and the electron beam. Structural modifications of the target may be conducted by means of etching due to interaction between the electron beam and gas composition.

US Patent:

8237120, Aug 7, 2012

Filed:

Sep 17, 2009

Appl. No.:

12/561974

Inventors:

Gabor Toth - San Jose CA, US
Rudy Garcia - Union City CA, US
Mehran Nasser-Ghodsi - Hamilton MA, US
Khashayar Shadman - Mountain View CA, US
Ming Lun Yu - Fremont CA, US
Stuart Friedman - Palo Alto CA, US

Assignee:

KLA-Tencor Corporation - San Jose CA

International Classification:

G01N 23/225

US Classification:

250310

Abstract:

A defect may be characterized using primary radiation directed from a primary electron source to a measurement location on the sample. An electron energy analyzer may capture secondary electrons emitted from the measurement location in a focusing direction by an electron energy analyzer. A transverse focusing device may focus electrons emitted from the measurement location in a transverse direction that is perpendicular to the focusing direction.

US Patent:

8618513, Dec 31, 2013

Filed:

May 10, 2012

Appl. No.:

13/468617

Inventors:

Tomas Plettner - San Ramon CA, US
Mehran Nasser-Ghodsi - Hamilton MA, US
Robert G. Haynes - Pleasanton CA, US
Rudy F. Garcia - Union City CA, US

Assignee:

KLA-Tencor Corporation - Milpitas CA

International Classification:

G21K 5/00

US Classification:

2504921, 2504931, 250504 R

Abstract:

One embodiment disclosed relates to an apparatus forming an electrical conduction path through an insulating layer on a surface of a substrate. A first radiation source is configured to emit radiation to a first region of the insulating layer, and a first electrical contact is configured to apply a first bias voltage to the first region. A second radiation source is configured to emit radiation to a second region of the insulating layer, and a second electrical contact is configured to apply a second bias voltage to the second region. The conductivities of the regions are increased by the radiation such that conductive paths are formed through the insulating layer at those regions. In one implementation, the apparatus may be used in an electron beam instrument. Another embodiment relates to a method of forming an electrical conduction path through an insulating layer. Other embodiments, aspects and features are also disclosed.