Song Zhao from 2322 11Th Ave E, Seattle, WA 98102, age 54

Medicine Doctors

Song Zhao

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Specialties:

Hematology/Oncology

Work:

Swedish Medical GroupMinor & James Medical
515 Minor Ave STE 170, Seattle, WA 98104
(206)3869501 (phone), (206)3869547 (fax)

Education:

Medical School
Peking Union Med Coll, Beijing, Beijing, China
Graduated: 1996

Conditions:

Anemia
Endocarditis

Languages:

English

Description:

Dr. Zhao graduated from the Peking Union Med Coll, Beijing, Beijing, China in 1996. He works in Seattle, WA and specializes in Hematology/Oncology. Dr. Zhao is affiliated with Harborview Medical Center and Swedish Medical Center - First Hill.

Song Q. Zhao

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Specialties:

Anatomic Pathology & Clinical Pathology

Work:

Associated Pathologists
700 S Park St, Madison, WI 53715
(608)2586914 (phone), (608)2586268 (fax)

Education:

Medical School
Henan Coll of Traditional Chinese Med, Zhengzhou City, Henan, China
Graduated: 1984

Languages:

English

Description:

Dr. Zhao graduated from the Henan Coll of Traditional Chinese Med, Zhengzhou City, Henan, China in 1984. He works in Madison, WI and specializes in Anatomic Pathology & Clinical Pathology. Dr. Zhao is affiliated with Grant Regional Health Center, Southwest Health Center, St Marys Hospital and Upland Hills Health.

Name / Title

Company / Classification

Phones & Addresses

Song Zhao

SING KONG ELECTRONICS CORP

127A Lafayette St, New York, NY 10013

Us Patents

Novel Method To Improve Performance By Enhancing Poly Gate Doping Concentration In An Embedded Sige Pmos Process
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US Patent:

20110306170, Dec 15, 2011
Filed:

Aug 28, 2009
Appl. No.:

12/549908
Inventors:

Xin WANG - New York NY, US
Zhiqiang WU - Allen TX, US
Weize XIONG - Austin TX, US
Song Zhao - Plano TX, US
Assignee:

TEXAS INSTRUMENTS INCORPORATED - Dallas TX
International Classification:

H01L 21/336
US Classification:

438197, 257E21409
Abstract:

A method for forming an embedded SiGe (eSiGe) PMOS transistor () with improved PMOS poly gate () doping concentration without increasing mask count and causing S/D overrun issue. After gate sidewall spacer () formation, the gate electrode () and source/drain regions () are implanted. After the implant, a recess () is formed and SiGe is deposited in the recess. By implanting and removing the implanted material () from the source/drain regions prior to SiGe () deposition, high PMOS gate doping can be achieved without causing a S/D overrun issue.

Resumes

Medical Oncologist

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Location:

Seattle, WA

Industry:

Higher Education

Work:

Swedish Medical Center
Medical Oncologist
University of Washington 2010 - 2013
Senior Fellow In Hematology and Oncology
Long Island Jewish Medical Center 2007 - 2010
Resident
Memorial Sloan Kettering Cancer Center 2003 - 2007
Research Fellow

Education:

Point Loma Nazarene University 1997 - 2003
Doctorates, Doctor of Philosophy, Philosophy, Medicine Peking Union Medical College
Doctor of Medicine, Doctorates, Medicine

Skills:

Internal Medicine
Translational Research
Medicine
Cancer Research
Molecular Biology
Immunohistochemistry
Cancer
Cancer Treatment
Molecular Oncology
Laboratory
Experimental Design
Cancer Cell Biology
Scientific Presentation
Scientific Review
Solid Tumor
Prostate Cancer

Languages:

English
Mandarin