Stevan G Hunter

US Patent:

20030091740, May 15, 2003

Filed:

Aug 8, 2001

Appl. No.:

09/925223

Inventors:

Stephen Gilbert - San Francisco CA, US
Kaushal Singh - Santa Clara CA, US
Sanjeev Aggarwal - Plano TX, US
Stevan Hunter - Fort Collins CO, US

International Classification:

C23C016/00
B05D005/12

US Classification:

427/255280, 427/126300

Abstract:

Improved methods of forming PZT thin films that are compatible with industry-standard chemical vapor deposition production techniques are described. These methods enable PZT thin films having thicknesses of 70 nm or less to be fabricated with high within-wafer uniformity, high throughput and at a relatively low deposition temperature. In one aspect, a source reagent solution comprising a mixture of a lead precursor, a titanium precursor and a zirconium precursor in a solvent medium is provided. The source reagent solution is vaporized to form a precursor vapor. The precursor vapor is introduced into a chemical vapor deposition chamber containing the substrate. In another aspect, before deposition, the substrate is preheated during a preheating period. After the preheating period, the substrate is disposed on a heated susceptor during a heating period, after which a PZT film is formed on the heated substrate.

US Patent:

20040023416, Feb 5, 2004

Filed:

Aug 5, 2002

Appl. No.:

10/212895

Inventors:

Stephen Gilbert - San Francisco CA, US
Sanjeev Aggarwal - Plano TX, US
Scott Summerfelt - Garland TX, US
Stevan Hunter - Fort Collins CO, US

International Classification:

H01L021/00
H01L021/8242
H01L021/31
H01L021/469

US Classification:

438/003000, 438/778000, 438/785000, 438/240000

Abstract:

A method is provided for forming a paraelectric semiconductor device by depositing a seed layer on an oxide electrode using a paraelectric material precursor and depositing a paraelectric layer on the seed layer using the paraelectric material precursor.