Steven M Berger

US Patent:

7504182, Mar 17, 2009

Filed:

Sep 17, 2003

Appl. No.:

10/664247

Inventors:

Diane K. Stewart - Ipswich MA, US
Joan Williams Casey, legal representative - West Roxbury MA, US
John Beaty - Belmont MA, US
Christian R. Musil - Cambridge MA, US
Steven Berger - Portland OR, US

Assignee:

FEI Company - Hillsboro OR

International Classification:

G03F 1/00

US Classification:

430 5

Abstract:

Masks can be repaired by creating a structure that is different from the original design, but that produces the same aerial image. For example, missing opaque material can be replaced by implanting gallium atoms to reduce transmission and quartz can be etched to an appropriate depth to produce the proper phase. In another aspect, a laser or other means can be used to remove an area of a mask around a defect, and then mask structures, either the intended design structures or alternate structures that produce the same aerial image, can be constructed using charged particle beam deposition and etching. For example, an electron beam can be used to deposit quartz to alter the phase of transmitted light. An electron beam can also be used with a gas to etch quartz to remove a layer including implanted gallium atoms. Gallium staining can also be reduced or eliminated by providing a sacrificial layer that can be removed, along with the implanted gallium atoms, using, for example, a broad ion beam.

US Patent:

7662524, Feb 16, 2010

Filed:

Dec 29, 2008

Appl. No.:

12/345368

Inventors:

Diane K. Stewart - Ipswich MA, US
J. David Casey, Jr. - West Roxbury MA, US
Joan Williams Casey, legal representative - West Roxbury MA, US
John Beaty - Belmont MA, US
Christian R. Musil - Cambridge MA, US
Steven Berger - Portland OR, US

Assignee:

FEI Company - Hillsboro OR

International Classification:

G03F 1/00
G03C 5/00

US Classification:

430 5, 430 30

Abstract:

Masks can be repaired by creating a structure that is different from the original design, but that produces the same aerial image. For example, missing opaque material can be replaced by implanting gallium atoms to reduce transmission and quartz can be etched to an appropriate depth to produce the proper phase. In another aspect, a laser or other means can be used to remove an area of a mask around a defect, and then mask structures, either the intended design structures or alternate structures that produce the same aerial image, can be constructed using charged particle beam deposition and etching. For example, an electron beam can be used to deposit quartz to alter the phase of transmitted light. An electron beam can also be used with a gas to etch quartz to remove a layer including implanted gallium atoms. Gallium staining can also be reduced or eliminated by providing a sacrificial layer that can be removed, along with the implanted gallium atoms, using, for example, a broad ion beam.

US Patent:

7727681, Jun 1, 2010

Filed:

Jan 16, 2004

Appl. No.:

10/758966

Inventors:

Diane K. Stewart - Ipswich MA, US
J. David Casey, Jr. - West Roxbury MA, US
Joan Williams Casey, legal representative - West Roxbury MA, US
John Beaty - Belmont MA, US
Christian R. Musil - New Providence NJ, US
Steven Berger - Portland OR, US
Sybren J. Sijbrandij - Arlington MA, US

Assignee:

FEI Company - Hillsboro OR

International Classification:

B01J 19/08

US Classification:

430 5, 2041582, 20415715

Abstract:

Transmissivity is restored to a gallium stained substrate by directing an electron beam to the substrate in the presence of an etching gas. For higher concentrations of implanted gallium, the transparency can be substantially restored without reducing the thickness of the substrate. For lower doses of implanted gallium, the transmission is restored to 100%, although the thickness of the substrate is reduced. The invention is suitable for use in the repair of photolithography masks.