Steven R Groves

US Patent:

47466200, May 24, 1988

Filed:

Jul 23, 1986

Appl. No.:

6/888950

Inventors:

Vicky Diadiuk - Bedford MA
Steven H. Groves - Lexington MA

Assignee:

Massachusetts Institute of Technology - Cambridge MA

International Classification:

H01L 21225
H01L 21285

US Classification:

437 3

Abstract:

A lateral p-i-n photodetector and a method of forming a lateral p-i-n photodetector in which p- and n-type regions are formed on a semi-insulator or i-type body by allowing metal and p-dopant compounds and metal and n-dopant compounds onto the i-type body. During alloying, p- and n-type regions are formed in the i-type body by diffusion of the dopants from the compounds, leaving the metallic compounds as n- and p-type contacts over respective p- and n-regions. In preferred embodiments, the i-material is either Fe doped InP or InGaAs.