Thomas E Boone

US Patent:

7179329, Feb 20, 2007

Filed:

Oct 22, 2002

Appl. No.:

10/277352

Inventors:

Thomas Boone - Hamden CT, US
Eric S. Harmon - Norfolk MA, US
Robert D. Koudelka - East Haven CT, US
David B. Salzman - Chevy Chase MD, US
Jerry M. Woodall - New Haven CT, US

Assignee:

Yale University - New Haven CT

International Classification:

C30B 9/00

US Classification:

117 2

Abstract:

Methods are disclosed for producing highly doped semiconductor materials. Using the invention, one can achieve doping densities that exceed traditional, established carrier saturation limits without deleterious side effects. Additionally, highly doped semiconductor materials are disclosed, as well as improved electronic and optoelectronic devices/components using said materials. The innovative materials and processes enabled by the invention yield significant performance improvements and/or cost reductions for a wide variety of semiconductor-based microelectronic and optoelectronic devices/systems. Materials are grown in an anion-rich environment, which, in the preferred embodiment, are produced by moderate substrate temperatures during growth in an oxygen-poor environment. The materials exhibit fewer non-radiative recombination centers at higher doping concentrations than prior art materials, and the highly doped state of matter can exhibit a minority carrier lifetime dominated by radiative recombination at higher doping levels and higher majority carrier concentrations than achieved in prior art materials. Important applications enabled by these novel materials include high performance electronic or optoelectronic devices, which can be smaller and faster, yet still capture or emit light efficiently, and high performance electronics, such as transistors, which can be smaller and faster, yet cooler.

US Patent:

20090064922, Mar 12, 2009

Filed:

Feb 20, 2007

Appl. No.:

11/708652

Inventors:

Thomas D. Boone - Hamden CT, US
Eric S. Harmon - Norfolk MA, US
Robert D. Koudelka - East Haven CT, US
David B. Salzman - Chevy Chase MD, US
Jerry M. Woodall - New Haven CT, US

International Classification:

C30B 15/14
C30B 23/02

US Classification:

117 3, 117108

Abstract:

Methods are disclosed for producing highly doped semiconductor materials. Using the invention, one can achieve doping densities that exceed traditional, established carrier saturation limits without deleterious side effects. Additionally, highly doped semiconductor materials are disclosed, as well as improved electronic and optoelectronic devices/components using said materials. The innovative materials and processes enabled by the invention yield significant performance improvements and/or cost reductions for a wide variety of semiconductor-based microelectronic and optoelectronic devices/systems.Materials are grown in an anion-rich environment, which, in the preferred embodiment, are produced by moderate substrate temperatures during growth in an oxygen-poor environment. The materials exhibit fewer non-radiative recombination centers at higher doping concentrations than prior art materials, and the highly doped state of matter can exhibit a minority carrier lifetime dominated by radiative recombination at higher doping levels and higher majority carrier concentrations than achieved in prior art materials. Important applications enabled by these novel materials include high performance electronic or optoelectronic devices, which can be smaller and faster, yet still capture or emit light efficiently, and high performance electronics, such as transistors, which can be smaller and faster, yet cooler.