Timothy V Compton

age ~48

from Talladega, AL

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Timothy Compton Phones & Addresses

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Author
Timothy G. Compton

ISBN #
0838753485

Name / Title

Company / Classification

Phones & Addresses

Timothy Compton
incorporator

Odd Jobs Incorporated
CONSTRUCTION

Jacksonville, AL

Timothy G Compton
incorporator

Traditions Bancshares, Inc
BANK HOLDING COMPANY

Timothy P. Compton

SOFAS PLUS, LTD

Timothy Compton
Principal

Through My Eyes and Tees
Ret Optical Goods

6038 W Catalina Dr, Phoenix, AZ 85033

Chemical-Mechanical Planarization Composition Having Benzenesulfonic Acid And Per-Compound Oxidizing Agents, And Associated Method For Use
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US Patent:

7514363, Apr 7, 2009
Filed:

Aug 29, 2005
Appl. No.:

11/212628
Inventors:

Gautam Banerjee - Chandler AZ, US
Timothy Frederick Compton - Casa Grande AZ, US
Junaid Ahmed Siddiqui - Richmond VA, US
Ajoy Zutshi - Chandler AZ, US
Assignee:

DuPont Air Products NanoMaterials LLC - Tempe AZ
International Classification:

H01L 21/302
H01L 21/461
US Classification:

438692, 438691, 438693, 252 792, 252 794
Abstract:

A composition and associated method for chemical mechanical planarization (or other polishing) are described. The composition contains an abrasive, benzenesulfonic acid compound, a per-compound oxidizing agent, and water. The composition affords tunability of removal rates for metal, barrier layer materials, and dielectric layer materials in metal CMP processes. The composition is particularly useful in conjunction with the associated method for metal CMP applications (e. g. , step 2 copper CMP processes).

Chemical-Mechanical Planarization Composition Having Benzenesulfonic Acid And Per-Compound Oxidizing Agents, And Associated Method For Use
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US Patent:

20090261291, Oct 22, 2009
Filed:

Apr 7, 2009
Appl. No.:

12/419619
Inventors:

Gautam Banerjee - Chandler AZ, US
Timothy Frederick Compton - Casa Grande AZ, US
Junaid Ahmed Siddiqui - Richmond VA, US
Ajoy Zutshi - Chandler AZ, US
International Classification:

C09K 13/00
US Classification:

252 791
Abstract:

A composition and associated method for chemical mechanical planarization (or other polishing) are described. The composition contains an abrasive, benzenesulfonic acid compound, a per-compound oxidizing agent, and water. The composition affords tunability of removal rates for metal, barrier layer materials, and dielectric layer materials in metal CMP processes. The composition is particularly useful in conjunction with the associated method for metal CMP applications (e.g., step 2 copper CMP processes).