Gautam Banerjee - Chandler AZ, US Timothy Frederick Compton - Casa Grande AZ, US Junaid Ahmed Siddiqui - Richmond VA, US Ajoy Zutshi - Chandler AZ, US
Assignee:
DuPont Air Products NanoMaterials LLC - Tempe AZ
International Classification:
H01L 21/302 H01L 21/461
US Classification:
438692, 438691, 438693, 252 792, 252 794
Abstract:
A composition and associated method for chemical mechanical planarization (or other polishing) are described. The composition contains an abrasive, benzenesulfonic acid compound, a per-compound oxidizing agent, and water. The composition affords tunability of removal rates for metal, barrier layer materials, and dielectric layer materials in metal CMP processes. The composition is particularly useful in conjunction with the associated method for metal CMP applications (e. g. , step 2 copper CMP processes).
Methods For Determining Effective Doses Of Fatty Acid Amide Hydrolase Inhibitors In Vivo
Timothy Compton - Issaquah WA, US Jeff Parrott - Irvine CA, US Edward Monaghan - Rancho Santa Margarita CA, US Olivier Dasse - Foothill Ranch CA, US David Putman - Irvine CA, US
Described herein is a method for determining an effective dose of a composition for inhibiting fatty acid amide hydrolase activity in vivo, by first administering to a subject a dose of a test composition, and subsequently assessing if the level of a fatty acid amide in the subject increases. Also described, is a method for optimizing therapeutic efficacy for treatment of anxiety, depression, pain, or a metabolic disorder by increasing or decreasing a dose of a fatty amide hydrolase inhibitor according to a patient's fatty acid amide levels. In addition, pharmaceutical compositions are described, which contain fatty acid amide hydrolase inhibitors effective for increasing a FAA level in a patient.
Chemical-Mechanical Planarization Composition Having Benzenesulfonic Acid And Per-Compound Oxidizing Agents, And Associated Method For Use
Gautam Banerjee - Chandler AZ, US Timothy Frederick Compton - Casa Grande AZ, US Junaid Ahmed Siddiqui - Richmond VA, US Ajoy Zutshi - Chandler AZ, US
International Classification:
C09K 13/00
US Classification:
252 791
Abstract:
A composition and associated method for chemical mechanical planarization (or other polishing) are described. The composition contains an abrasive, benzenesulfonic acid compound, a per-compound oxidizing agent, and water. The composition affords tunability of removal rates for metal, barrier layer materials, and dielectric layer materials in metal CMP processes. The composition is particularly useful in conjunction with the associated method for metal CMP applications (e.g., step 2 copper CMP processes).