Junaid Ahmed Siddiqui - Richmond VA, US Timothy Frederick Compton - Casa Grande AZ, US
Assignee:
DuPont Air Products Nanomaterials LLC - Tempe AZ
International Classification:
C09G001/02 C09G001/04
US Classification:
51307, 51308, 51309, 51298, 106 3, 106 11
Abstract:
A composition and associated methods for chemical mechanical planarization (or other polishing) are described. The composition may comprise an abrasive and a dispersed hybrid organic/inorganic particle. The composition may further comprise an alkyne compound. Two different methods for chemical mechanical planarization are disclosed. In one method (Method A), the CMP slurry composition employed in the method comprises comprise an abrasive and a dispersed hybrid organic/inorganic particle. In another method (Method B), the CMP slurry composition employed in the method comprises comprise an abrasive and an alkyne compound. The composition may further comprise an oxidizing agent in which case the composition is particularly useful in conjunction with the associated methods (A and B) for metal CMP applications (e. g. , tungsten CMP).
Tunable Composition And Method For Chemical-Mechanical Planarization With Aspartic Acid/Tolyltriazole
A composition and associated method for chemical mechanical planarization (or other polishing) are described which afford high tantalum to copper selectivity in copper CMP and which are tunable (in relation to polishing performance). The composition comprises an abrasive and an N-acyl-N-hydrocarbonoxyalkyl aspartic acid compound and/or a tolyltriazole derivative.
Composition And Associated Methods For Chemical Mechanical Planarization Having High Selectivity For Metal Removal
Junaid Ahmed Siddiqui - Richmond VA, US Timothy Frederick Compton - Casa Grande AZ, US
Assignee:
DuPont Air Products Nanomaterials LLD - Tempe AZ
International Classification:
C09G 1/02 C09G 1/04
US Classification:
51307, 51308, 51309, 51298, 106 3, 106 11
Abstract:
A composition and associated methods for chemical mechanical planarization (or other polishing) are described. The composition may comprise an abrasive and a dispersed hybrid organic/inorganic particle. The composition may further comprise an alkyne compound. Two different methods for chemical mechanical planarization are disclosed. In one method (Method A), the CMP slurry composition employed in the method comprises comprise an abrasive and a dispersed hybrid organic/inorganic particle. In another method (Method B), the CMP slurry composition employed in the method comprises comprise an abrasive and an alkyne compound. The composition may further comprise an oxidizing agent in which case the composition is particularly useful in conjunction with the associated methods (A and B) for metal CMP applications (e. g. , tungsten CMP).
Chemical-Mechanical Planarization Composition Having Ketooxime Compounds And Associated Method For Use
Junaid Ahmed Siddiqui - Richmond VA, US Timothy Frederick Compton - Casa Grande AZ, US
Assignee:
Air Products and Chemicals, Inc. - Allentown PA
International Classification:
H01L 21/302 H01L 21/461 C11D 7/32 C09K 13/00
US Classification:
438693, 438690, 438692, 510175, 252 791
Abstract:
A composition and associated method for chemical mechanical planarization (or other polishing) are described. The composition contains a ketoxime compound and water. The composition may also contain an abrasive and/or a per compound oxidizing agent. The composition affords tunability of removal rates for metal, barrier material, and dielectric layer materials in metal CMP. The composition is particularly useful in conjunction with the associated method for metal CMP applications (e. g. , step 2 copper CMP processes).
Composition And Associated Method For Catalyzing Removal Rates Of Dielectric Films During Chemical Mechanical Planarization
Junaid Ahmed Siddiqui - Richmond VA, US Robin Edward Richards - Phoenix AZ, US Timothy Frederick Compton - Casa Grande AZ, US
Assignee:
DuPont Air Products Nanomaterials LLC - Tempe AZ
International Classification:
H01L 21/302
US Classification:
438690, 438691, 438692, 252 795
Abstract:
A low solids-content slurry for polishing (e. g. , chemical mechanical planarization) of substrates comprising a dielectric and an associated method using the slurry are described. The slurry and associated method afford high removal rates of dielectric during polishing even though the slurry has low solids-content. The slurry comprises a bicarbonate salt, which acts as a catalyst for increasing removal rates of dielectric films during polishing of these substrates.
Chemical-Mechanical Planarization Composition Having Benzenesulfonic Acid And Per-Compound Oxidizing Agents, And Associated Method For Use
Gautam Banerjee - Chandler AZ, US Timothy Frederick Compton - Casa Grande AZ, US Junaid Ahmed Siddiqui - Richmond VA, US Ajoy Zutshi - Chandler AZ, US
Assignee:
DuPont Air Products NanoMaterials LLC - Tempe AZ
International Classification:
H01L 21/302 H01L 21/461
US Classification:
438692, 438691, 438693, 252 792, 252 794
Abstract:
A composition and associated method for chemical mechanical planarization (or other polishing) are described. The composition contains an abrasive, benzenesulfonic acid compound, a per-compound oxidizing agent, and water. The composition affords tunability of removal rates for metal, barrier layer materials, and dielectric layer materials in metal CMP processes. The composition is particularly useful in conjunction with the associated method for metal CMP applications (e. g. , step 2 copper CMP processes).
Cmp Composition Of Boron Surface-Modified Abrasive And Nitro-Substituted Sulfonic Acid And Method Of Use
A composition and associated method for chemical mechanical planarization (or other polishing) are described. The composition contains a boron surface-modified abrasive, a nitro-substituted sulfonic acid compound, a per-compound oxidizing agent, and water. The composition affords high removal rates for barrier layer materials in metal CMP processes. The composition is particularly useful in conjunction with the associated method for metal CMP applications (e. g. , step 2 copper CMP processes).
Method For Immobilizing Ligands And Organometallic Compounds On Silica Surface, And Their Application In Chemical Mechanical Planarization
Junaid Ahmed Siddiqui - Richmond VA, US Timothy Frederick Compton - Casa Grande AZ, US Robin Edward Richards - Tucson AZ, US
Assignee:
DuPont Air Products NanoMaterials LLC - Allentown PA
International Classification:
C09K 13/00
US Classification:
252 791, 438692
Abstract:
A method of polishing a substrate with a polishing composition comprising an oxidizing agent and abrasive particles having a surface, said surface of the abrasive particles being at least partially modified with 1) at least one stabilizer compound comprising aluminum, boron, tungsten, or both, said stabilizer compound being bound via a covalent bond to said abrasive particles, and 2) an organic chelating compound, said chelating compound being bound via a covalent bond to said stabilizer compound. The organic chelating compounds include one or more of 1) a nitrogen-containing moiety and between one and five other polar groups; 2) a sulfur-containing moiety and between one and five other polar groups; and 3) between two and five polar groups selected from carboxylic acid groups or salts thereof and hydroxyl groups.