Timothy G. Dunham - South Burlington VT Howard S. Landis - Underhill VT William T. Motsiff - Essex Junction VT
Assignee:
International Business Machines Corporation - Armonk NY
International Classification:
H01L 2348
US Classification:
257758, 438622
Abstract:
Disclosed is a semiconductor device comprising: a multiplicity of wiring levels, each wiring level comprising conductive wires and a multiplicity of conductive fill shapes embedded in a dielectric; at least some of the fill shapes in at least two adjacent wiring levels being co-aligned; and where the fill shapes on adjacent levels are aligned, one or more conductive vias extending between and joining each co-aligned fill shape in each adjacent wiring level. The joined fill shapes serve to reinforce and support the dielectric, which may be a non-rigid or low-k dielectric.
Stacked Fill Structures For Support Of Dielectric Layers
Timothy G. Dunham - South Burlington VT Howard S. Landis - Underhill VT William T. Motsiff - Essex Junction VT
Assignee:
International Business Machines Corporation - Armonk NY
International Classification:
H01L 214763
US Classification:
438622, 438687, 438652, 438653
Abstract:
Disclosed is a semiconductor device comprising: a multiplicity of wiring levels, each wiring level comprising conductive wires and a multiplicity of conductive fill shapes embedded in a dielectric; at least some of the fill shapes in at least two adjacent wiring levels being co-aligned; and where the fill shapes on adjacent levels are aligned, one or more conductive vias extending between and joining each co-aligned fill shape in each adjacent wiring level. The joined fill shapes serve to reinforce and support the dielectric, which may be a non-rigid or low-k dielectric.
Shapes-Based Migration Of Aluminum Designs To Copper Damascence
Timothy G. Dunham - South Burlington VT, US Ezra D. B. Hall - Colchester VT, US Howard S. Landis - Underhill VT, US Mark A. Lavin - Katonah NY, US William C. Leipold - Enosburg Falls VT, US
Assignee:
International Business Machines Corporation - Armonk NY
International Classification:
H01L 21/4763
US Classification:
438622, 438631, 438633, 438637
Abstract:
An interconnect structure for use in semiconductor devices which interconnects a plurality of dissimilar metal wiring layers, which are connected vias, by incorporating shaped voids in the metal layers. The invention also discloses a method by which such structures are constructed.
Gary S. Ditlow - Garrison NY, US Daria R. Dooling - Huntington VT, US Timothy G. Dunham - South Burlington VT, US William C. Leipold - Enosburg Falls VT, US Stephen D. Thomas - Essex Junction VT, US Ralph J. Williams - Essex Junction VT, US
Assignee:
International Business Machines Corporation - Armonk NY
International Classification:
G06F 17/50
US Classification:
716 7
Abstract:
Disclosed is a method and structure that partitions an integrated circuit design by identifying logical blocks within the integrated circuit design based on size heuristics of logical macros in the design hierarchy. The invention determines whether the number of logical blocks is within a range of desired number of logical blocks and repeats the process of identifying logical blocks for different hierarchical levels of the integrated circuit design until the number of logical blocks is within the range of the desired number of logical blocks. This serves as a guide to partition the chip as opposed to a grid-like partitioning.
Removal Of Relatively Unimportant Shapes From A Set Of Shapes
Joseph B. Allen - Wappingers Falls NY, US Timothy G. Dunham - South Burlington VT, US Valarmathi C. Shanmugam - Essex Junction VT, US
Assignee:
International Business Machines Corporation - Armonk NY
International Classification:
G06K 9/00
US Classification:
382144
Abstract:
A method for reducing a number of shapes, and a computer readable program code adapted to perform said method. The method forms first and second shape patterns. The second shape pattern includes the first shape pattern and error shapes. The error shapes are extracted from the second shape pattern. At least one environment shape corresponding to each error shape is derived from a subset of the error shapes. For example, each error shape in the subset may be expanded to form a corresponding expanded shape, and at least one environment shape corresponding to each expanded shape may be formed by removing all portions of the expanded shape common to the second shape pattern. The environment shape reflects a local geometric environment of its corresponding error shape. A subset of the environment shapes are deleted such that only unique environment shapes satisfying a selection criterion remain.
Shapes-Based Migration Of Aluminum Designs To Copper Damascene
Timothy G. Dunham - South Burlington VT, US Ezra D. B. Hall - Richmond VT, US Howard S. Landis - Underhill VT, US Mark A. Lavin - Katonah NY, US William C. Leipold - Enosburg Falls VT, US
Assignee:
International Business Machines Corporation - Armonk NY
International Classification:
H01L 21/44
US Classification:
438597, 257E21575
Abstract:
An interconnect structure, method of fabricating the interconnect structure and method of designing the interconnect structure for use in semiconductor devices. The interconnect structure includes a damascene metal wire having a pattern of dielectric filled holes.
System And Method For Testing Pattern Sensitive Algorithms For Semiconductor Design
David L. DeMaris - Austin TX, US Timothy G. Dunham - South Burlington VT, US William C. Leipold - Enosburg Falls VT, US Daniel N. Maynard - Craftsbury Common VT, US Michael E. Scaman - Goshen NY, US Shi Zhong - Austin TX, US
Assignee:
International Business Machines Corporation - Armonk NY
International Classification:
G06F 17/50
US Classification:
716 4, 716 5, 716 7
Abstract:
A system and method for generating test patterns for a pattern sensitive algorithm. The method comprises the steps extracting feature samples from a layout design; grouping feature samples into clusters; selecting at least one area from the layout design that covers a feature sample from each cluster; and saving each pattern layout covered by the at least one area as test patterns.
Shapes-Based Migration Of Aluminum Designs To Copper Damascene
Timothy G. Dunham - South Burlington VT, US Ezra D. B. Hall - Richmond VT, US Howard S. Landis - Underhill VT, US Mark A. Lavin - Katonah NY, US William C. Leipold - Enosburg Falls VT, US
Assignee:
International Business Machines Corporation - Armonk NY
International Classification:
H01L 21/44
US Classification:
438597, 257E21575
Abstract:
An interconnect structure, method of fabricating the interconnect structure and method of designing the interconnect structure for use in semiconductor devices. The interconnect structure includes a damascene metal wire having a pattern of dielectric filled holes.