Walter M Glenn

US Patent:

6866746, Mar 15, 2005

Filed:

Nov 21, 2002

Appl. No.:

10/302774

Inventors:

Lawrence C. Lei - Milpitas CA, US
Alfred W. Mak - Union City CA, US
Avi Tepman - Cupertino CA, US
Ming Xi - Sunnyvale CA, US
Walter Benjamin Glenn - Pacifica CA, US

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

C23C016/00
C23F001/00
H01L021/306

US Classification:

15634529, 118715, 118733

Abstract:

Embodiments of the present invention generally relate to a clamshell and small volume chamber with a fixed substrate support. One embodiment of a processing chamber includes a fixed substrate support having a substrate receiving surface, a pumping ring disposed around a perimeter of the substrate receiving surface, and a gas distribution assembly disposed over the fixed substrate support. The pumping ring forms at least a portion of a pumping channel and has one or more apertures formed therethrough. The chamber may further include a gas-flow diffuser disposed radially inward of the apertures of the pumping ring. Another embodiment of a processing chamber includes a first assembly comprising a fixed substrate support and a second assembly comprising a gas distribution assembly. The first assembly includes a first assembly body that is shaped and sized so that at least a portion of the first assembly body is below the substrate receiving surface of the substrate support. A hinge assembly couples the first assembly and the second assembly.

US Patent:

7175713, Feb 13, 2007

Filed:

Jan 27, 2003

Appl. No.:

10/352257

Inventors:

Randhir P. S. Thakur - San Jose CA, US
Alfred W. Mak - Union City CA, US
Ming Xi - Palo Alto CA, US
Walter Benjamin Glenn - Pacifica CA, US
Ahmad A. Khan - Milpitas CA, US
Ayad A. Al-Shaikh - Santa Clara CA, US
Avgerinos V. Gelatos - Redwood City CA, US
Salvador P. Umotoy - Antioch CA, US

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

C23C 16/00
C23C 16/503
C23C 16/505
C23C 16/50
C23F 1/00
H01L 21/306

US Classification:

118715, 15634529, 118723 R

Abstract:

An apparatus for cyclical depositing of thin films on semiconductor substrates, comprising a process chamber having a gas distribution system with separate paths for process gases and an exhaust system synchronized with operation of valves dosing the process gases into a reaction region of the chamber.

US Patent:

8123860, Feb 28, 2012

Filed:

Oct 30, 2008

Appl. No.:

12/261487

Inventors:

Randhir P. S. Thakur - San Jose CA, US
Alfred W. Mak - Union City CA, US
Ming Xi - Palo Alto CA, US
Walter Benjamin Glenn - Pacifica CA, US
Ahmad A. Khan - Milpitas CA, US
Ayad A. Al-Shaikh - Santa Clara CA, US
Avgerinos V. Gelatos - Redwood City CA, US
Salvador P. Umotoy - Antioch CA, US

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

C23C 16/455
C23C 16/52
C23F 1/00
H01L 21/306
C23C 16/06
C23C 16/22

US Classification:

118715, 1563451, 15634524, 15634526, 15634533, 15634534

Abstract:

An apparatus for cyclical depositing of thin films on semiconductor substrates, comprising a process chamber having a gas distribution system with separate paths for process gases and an exhaust system synchronized with operation of valves dosing the process gases into a reaction region of the chamber.

US Patent:

20030235961, Dec 25, 2003

Filed:

Apr 4, 2003

Appl. No.:

10/406833

Inventors:

Craig Metzner - Fremont CA, US
Walter Glenn - Pacifica CA, US

Assignee:

APPLIED MATERIALS, INC.

International Classification:

H01L021/31
H01L021/336
H01L021/469

US Classification:

438/287000, 438/785000

Abstract:

The present invention is directed to depositing multicomponent films with a cyclical sequential deposition (CSD) process. The CSD process deposits a film of a material on a surface by repeating a cycle of process steps comprising sequentially exposing the surface to at least two reactants. The reactants contain precursors that supply the elements that form the multicomponent material. The reactant components that are not precursors may react with the at least one precursor to form a film of the material, or may react with the surface onto which the film of material is to be deposited to prepare the surface for deposition. Each CSD cycle produces a discrete layer of a multicomponent material. The CSD cycle is repeated, depositing one layer each cycle, until the film of multicomponent material reaches the desired thickness.

US Patent:

20050139160, Jun 30, 2005

Filed:

Feb 16, 2005

Appl. No.:

11/059846

Inventors:

Lawrence Lei - Milpitas CA, US
Alfred Mak - Union City CA, US
Avi Tepman - Cupertino CA, US
Ming Xi - Palo Alto CA, US
Walter Glenn - Pacifica CA, US

International Classification:

C23C016/00

US Classification:

118715000, 156345340

Abstract:

Embodiments of the present invention generally relate to a small volume chamber with a substrate support. One embodiment of a processing chamber includes a first assembly having a substrate support, a pumping ring disposed around a perimeter of the substrate receiving surface, and a gas distribution assembly disposed over the substrate support. The chamber may further include a gas distribution assembly disposed over the substrate support. The first assembly and the gas distribution assembly can be selectively positioned between an open position and a closed position.

US Patent:

20070095285, May 3, 2007

Filed:

Dec 19, 2006

Appl. No.:

11/612931

Inventors:

Randhir Thakur - San Jose CA, US
Alfred Mak - Union City CA, US
Ming Xi - Palo Alto CA, US
Walter Glenn - Pacifica CA, US
Ahmad Khan - Milpitas CA, US
Ayad Al-Shaikh - Santa Clara CA, US
Avgerinos Gelatos - Redwood City CA, US
Salvador Umotoy - Antioch CA, US

International Classification:

C23C 16/00

US Classification:

118715000, 11872300R

Abstract:

An apparatus for cyclical depositing of thin films on semiconductor substrates, comprising a process chamber having a gas distribution system with separate paths for process gases and an exhaust system synchronized with operation of valves dosing the process gases into a reaction region of the chamber.