Wing Winnie Cheng

US Patent:

6462928, Oct 8, 2002

Filed:

May 7, 1999

Appl. No.:

09/306944

Inventors:

Shamouil Shamouilian - San Jose CA
You Wang - Cupertino CA
Surinder S. Bedi - Fremont CA
Arnold Kholodenko - San Francisco CA
Alexander M. Veytser - Mountain View CA
Kadthala R. Narendrnath - San Francisco CA
Semyon L. Kats - San Francisco CA
Dennis S. Grimard - Ann Arbor MI
Wing L. Cheng - Sunnyvale CA
Ananda H. Kumar - Milpitas CA

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

H02N 1300

US Classification:

361234

Abstract:

An electrostatic chuck comprises an electrical connector which is connected to the electrode to conduct an electrical charge to the electrode The electrical connector comprises a refractory metal having a melting temperature of at least about 1500Â C. , such as for example, tungsten, titanium, nickel, tantalum, molybdenum, or alloys thereof. Preferably, the electrical connector is bonded to the electrode by a metal having a softening temperature of less than about 600Â C. , such as aluminum, indium, or low melting point alloys.

US Patent:

6490146, Dec 3, 2002

Filed:

Aug 13, 2001

Appl. No.:

09/929806

Inventors:

You Wang - Cupertino CA
Shamouil Shamouilian - San Jose CA
Arnold Kholodenko - San Francisco CA
Alexander M. Veytser - Mountain View CA
Surinder S. Bedi - Fremont CA
Kadthala R. Narendrnath - San Jose CA
Semyon L. Kats - San Francisco CA
Dennis S. Grimard - Ann Arbor MI
Wing L. Cheng - Sunnyvale CA
Ananda H. Kumar - Milpitas CA

Assignee:

Applied Materials Inc. - Santa Clara CA

International Classification:

H01G 2300

US Classification:

361234, 361115, 361103

Abstract:

An electrostatic chuck for holding a substrate has an electrostatic member having a dielectric covering an electrode that is chargeable to electrostatically hold the substrate. The bond layer has a metal layer that is infiltrated or brazed between the electrostatic member and the base. The base may be a composite of a ceramic and metal, the composite having a coefficient of thermal expansion within about Â30% of a coefficient of thermal expansion of the electrostatic member. The base may also have a heater.

US Patent:

6503368, Jan 7, 2003

Filed:

Jun 29, 2000

Appl. No.:

09/607533

Inventors:

Arnold Kholodenko - San Francisco CA
Vijay Parkhe - Sunnyvale CA
Shamouil Shamouilian - San Jose CA
You Wang - Cupertino CA
Wing L. Cheng - Sunnyvale CA
Alexander M. Veytser - Mountain View CA

Assignee:

Applied Materials Inc. - Santa Clara CA

International Classification:

C23C 1600

US Classification:

15634551, 15634552, 15634553, 15634548, 118728, 118500, 118723 I

Abstract:

A substrate support comprises first, second and third sections connected to one another by first and second bonds , one of the sections comprises a surface adapted to receive a substrate. The first bond comprises a first bonding material and the second bond comprises a second bonding material. In one version, the first bonding material is capable of bonding surfaces when heated to a first temperature and the second bonding material is capable of bonding surfaces when heated to a second temperature.

US Patent:

6538872, Mar 25, 2003

Filed:

Nov 5, 2001

Appl. No.:

09/307214

Inventors:

You Wang - Cupertino CA
Shamouil Shamouilian - San Jose CA
Arnold Kholodenko - San Francisco CA
Alexander M. Veytser - Mountain View CA
Surinder S. Bedi - Fremont CA
Kadthala R. Narendrnath - San Jose CA
Semyon L. Kats - San Francisco CA
Dennis S. Grimard - Ann Arbor MI
Wing L. Cheng - Sunnyvale CA
Ananda H. Kumar - Milpitas CA

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

H01G 2300

US Classification:

361234, 361115, 361103

Abstract:

An electrostatic chuck for holding a substrate comprises an electrostatic member made from a dielectric covering an electrode that is chargeable to electrostatically hold the substrate A base that includes a heater is joined to the electrostatic member The base may be made from a composite material, such as a porous ceramic infiltrated with the metal, and may be joined to the electrostatic member by a bond layer.

US Patent:

6572814, Jun 3, 2003

Filed:

May 24, 2001

Appl. No.:

09/866353

Inventors:

Shamouil Shamoulian - San Jose CA
Arnold Kholodenko - San Francisco CA
Senh Thach - Union City CA
Wing Cheng - Sunnyvale CA

Assignee:

Applied Materials Inc. - Santa Clara CA

International Classification:

B22F 704

US Classification:

419 5, 419 36, 264605, 264629, 264657, 264666

Abstract:

A method of fabricating a semiconductor wafer support chuck apparatus having a first sintered layer and a second sintered layer. The method comprising the steps of providing the first sintered layer having a plurality of gas distribution ports and providing the second sintered layer having a plurality of grooves. The first sintered layer is stacked on top of the second sintered layer, where a diffusion bonding layer is disposed between the first sintered layer and the second sintered layer. Thereafter, the stacked first and second sintered layers are resintered such that the diffusion bonding layer joins the first and second sintered layers together to form a semiconductor wafer support apparatus.

US Patent:

6583980, Jun 24, 2003

Filed:

Aug 18, 2000

Appl. No.:

09/641536

Inventors:

You Wang - Cupertino CA
Arnold Kholodenko - San Francisco CA
Shamouil Shamouilian - San Jose CA
Alexander M. Veytser - Mountain View CA
Wing L. Cheng - Sunnyvale CA

Assignee:

Applied Materials Inc. - Santa Clara CA

International Classification:

H01G 300

US Classification:

361234, 361233

Abstract:

A chamber for processing a substrate comprises a support including an electrode at least partially covered by a dielectric that is permeable to electromagnetic energy. The electrode may be chargeable to electrostatically hold the substrate , to couple energy to a gas in the chamber , or both. A base below the support comprises a slot that may be adapted to serve as a thermal expansion slot to reduce thermal stresses.

US Patent:

6676760, Jan 13, 2004

Filed:

Aug 16, 2001

Appl. No.:

09/930938

Inventors:

Arnold V. Kholodenko - San Francisco CA
Dan Katz - Agoura Hills CA
Wing L. Cheng - Sunnyvale CA

Assignee:

Appiled Materials, Inc. - Santa Clara CA

International Classification:

C23C 1600

US Classification:

118728, 118715, 118726, 118723 R, 15634533, 15634551

Abstract:

A substrate processing chamber has a substrate support to support a substrate, and an exhaust conduit about the substrate support. A first process gas distributor directs a first process gas, such as a non-reactive gas, about the substrate perimeter and toward the exhaust conduit at a first flow rate to form a curtain of non-reactive gas about the substrate. A second process gas distributor directs a second process gas, such as reactive CVD or etchant gas, toward a central portion of the substrate at a second flow rate which is lower than the first flow rate. A gas energizer energizes the first and second process gases in the chamber. A controller operates the substrate support, gas flow meters, gas energizer, and throttle valve, to process the substrate in the energized gas.

US Patent:

6736668, May 18, 2004

Filed:

Sep 15, 2000

Appl. No.:

09/663864

Inventors:

Arnold V. Kholodenko - San Francisco CA 94132
Senh Thach - Union City CA 94587
Wing L. Cheng - Sunnyvale CA 94087
Alvin Lau - San Francisco CA 94121
Dennis S. Grimard - Ann Arbor MI 48103

International Classification:

H01R 1300

US Classification:

439487, 439485

Abstract:

An electrical coupler comprises an inner connector having upper and lower ends, an insulative outer connector element circumscribing the inner connector, and a thermally conductive flange disposed over the upper end of the inner connector and the outer connector for conducting heat from the electrical conductor. The electrical conductor may be utilized in a substrate support for semiconductor wafer processing. The substrate support comprises a chuck body having an electrode embedded therein, and an upper male connector coupled to the electrode and protruding from said chuck body. A cooling plate having the electrical coupler is positioned proximate to the chuck body. The upper male connector is inserted in the electrical coupler, and a power source coupled to the lower portion of the electrical coupler chucks and biases a wafer to an upper surface of said chuck. The thermally conductive flange conducts and transfers heat generated from the upper male connector and electrical coupler to the cooling plate.