Xiaoping Chen

age ~62

from Sugar Land, TX

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Formation Of Ohmic Contacts In Iii-Nitride Light Emitting Devices
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US Patent:

20020008243, Jan 24, 2002
Filed:

Jan 5, 2001
Appl. No.:

09/755935
Inventors:

Werner Goetz - Palo Alto CA, US
Michael Camras - Sunnyvale CA, US
Changhua Chen - San Jose CA, US
Xiaoping Chen - San Jose CA, US
Gina Christenson - Sunnyvale CA, US
R. Kern - San Jose CA, US
Chihping Kuo - Milpitas CA, US
Paul Martin - Pleasanton CA, US
Daniel Steigerwald - Cupertino CA, US
International Classification:

H01L027/15
US Classification:

257/079000
Abstract:

P-type layers of a GaN based light-emitting device are optimized for formation of Ohmic contact with metal. In a first embodiment, a p-type GaN transition layer with a resistivity greater than or equal to about 7 cm is formed between a p-type conductivity layer and a metal contact. In a second embodiment, the p-type transition layer is any III-V semiconductor. In a third embodiment, the p-type transition layer is a superlattice. In a fourth embodiment, a single p-type layer of varying composition and varying concentration of dopant is formed.

Formation Of Ohmic Contacts In Iii-Nitride Light Emitting Devices
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US Patent:

20050167693, Aug 4, 2005
Filed:

Mar 30, 2005
Appl. No.:

11/095854
Inventors:

Werner Goetz - Palo Alto CA, US
Michael Camras - Sunnyvale CA, US
Changhua Chen - San Jose CA, US
Xiaoping Chen - San Jose CA, US
Gina Christenson - Sunnyvale CA, US
R. Kern - San Jose CA, US
Chihping Kuo - Milpitas CA, US
Paul Martin - Pleasanton CA, US
Daniel Steigerwald - Cupertino CA, US
International Classification:

H01L021/00
H01L033/00
US Classification:

257103000, 438022000
Abstract:

P-type layers of a GaN based light-emitting device are optimized for formation of Ohmic contact with metal. In a first embodiment, a p-type GaN transition layer with a resistivity greater than or equal to about 7 Ω cm is formed between a p-type conductivity layer and a metal contact. In a second embodiment, the p-type transition layer is any III-V semiconductor. In a third embodiment, the p-type transition layer is a superlattice. In a fourth embodiment, a single p-type layer of varying composition and varying concentration of dopant is formed.