Yang H Yang

US Patent:

6911716, Jun 28, 2005

Filed:

Sep 13, 2002

Appl. No.:

10/243369

Inventors:

Lay-Lay Chua - Cambridge, GB
Vincent Etienne Houtsma - Berkeley Heights NJ, US
Rose Fasano Kopf - Green Brook NJ, US
Andreas Leven - Gillette NJ, US
Chun-Ting Liu - Hsin-chu, TW
Wei-Jer Sung - New Providence NJ, US
Yang Yang - Gillette NJ, US

Assignee:

Lucent Technologies, Inc. - Murray Hill NJ

International Classification:

H01L027/082

US Classification:

257586, 257592

Abstract:

A method for fabricating a bipolar transistor includes forming a vertical sequence of semiconductor layers, forming an implant mask on the last formed semiconductor layer, and implanting dopant ions into a portion of one or more of the semiconductor layers. The sequence of semiconductor layers includes a collector layer, a base layer that is in contact with the collector layer, and an emitter layer that is in contact with the base layer. The implanting uses a process in which the implant mask stops dopant ions from penetrating into a portion of the sequence of layers.

US Patent:

6989579, Jan 24, 2006

Filed:

Jan 14, 2003

Appl. No.:

10/341777

Inventors:

Yang Yang - Gillette NJ, US
Chun-Ting Liu - Hsin-chu, TW
Rose Kopf - Green Brook NJ, US
Chen-Jung Chen - Berkeley Heights NJ, US
Laylay Chua - Cambridge, GB

Assignee:

Lucent Technologies Inc. - Murray Hill NJ

International Classification:

H01L 29/00

US Classification:

257532, 257577, 257641

Abstract:

The present invention provides a method for adhering dielectric layers to metals, in particular inert metals, using an adhesive layer comprising silicon-rich silicon nitride. Good adhesion is achieved at temperatures of less than 300 C. , thereby facilitating the fabrication of semiconductor structures containing II–VI and III–V semiconductors.

US Patent:

7433703, Oct 7, 2008

Filed:

Jun 16, 2005

Appl. No.:

11/153924

Inventors:

Stan Vitebsky - Morristown NJ, US
Yang Yang - Parsippany NJ, US

Assignee:

Lucent Technologies Inc. - Murray Hill NJ

International Classification:

H04B 7/00
H04Q 7/20

US Classification:

455522, 455 69, 4554522, 4554353, 370437, 370455, 370318

Abstract:

The present invention provides a method for allocating resources in a wireless communication system. The method may include selecting at least one resource control bit that is not to be transmitted. The at least one resource control bit is selected based on at least one priority associated with the at least one resource control bit.

US Patent:

7454112, Nov 18, 2008

Filed:

Mar 31, 2006

Appl. No.:

11/394780

Inventors:

Andreas Bertold Leven - Gillette NJ, US
Yang Yang - Gillette NJ, US

Assignee:

Lucent Technologies Inc. - Murray Hill NJ

International Classification:

G02B 6/10
G02B 6/00

US Classification:

385131, 385129, 385130, 385141, 385142

Abstract:

Apparatus including: a substrate layer having a substantially planar top surface; an optically conductive peak located and elongated on, and spanning a first thickness measured in a direction generally away from, the top surface; the optically conductive peak having first and second lateral walls each including distal and proximal lateral wall portions, the proximal lateral wall portions intersecting the top surface; and first and second sidewall layers located on the distal lateral wall portions, the sidewall layers not intersecting the top surface and spanning a second thickness that is less than the first thickness measured in the same direction.

US Patent:

7514359, Apr 7, 2009

Filed:

Jul 19, 2005

Appl. No.:

11/184232

Inventors:

Yang Yang - Gillette NJ, US
Chun-Ting Liu - Hsin-chu, TW
Rose Kopf - Green Brook NJ, US
Chen-Jung Chen - Berkeley Heights NJ, US
Laylay Chua - Cambridge, GB

Assignee:

Alcatel-Lucent USA Inc. - Murray Hill NJ

International Classification:

H01L 21/44

US Classification:

438654, 257753, 257E2316

Abstract:

The present invention provides a method for adhering dielectric layers to metals, in particular inert metals, using an adhesive layer comprising silicon-rich silicon nitride. Good adhesion is achieved at temperatures of less than 300 C. , thereby facilitating the fabrication of semiconductor structures containing II-VI and III-V semiconductors.

US Patent:

7565110, Jul 21, 2009

Filed:

Sep 17, 2004

Appl. No.:

10/944289

Inventors:

Yang Yang - Parsippany NJ, US
Qi Bi - Morris Plains NJ, US
Lily H. Zhu - Parsippany NJ, US

Assignee:

Alcatel-Lucent USA Inc. - Murray Hill NJ

International Classification:

H04B 1/00
H04B 15/00

US Classification:

455 631, 455 6711, 455 6713, 4551142, 4552263, 370328, 370332

Abstract:

A method for determining rise over thermal for a base station in a wireless communications system is provided. The method comprises receiving a first and second diversity signal, measuring the signal strength of the first and second diversity signals, and estimating the noise floor for the first and second diversity signals. The signal strength rise is determined for the first and second diversity signals based on the measured signal strength and estimated noise floor of the first and second diversity signals respectively. The rise over thermal is then determined based on the determined signal strength rise of the first and second diversity signals.

US Patent:

7595249, Sep 29, 2009

Filed:

Sep 29, 2008

Appl. No.:

12/286239

Inventors:

Lay-Lay Chua - Cambridge, GB
Vincent Etienne Houtsma - Berkeley Heights NJ, US
Rose Fasano Kopf - Green Brook NJ, US
Andreas Leven - Gillette NJ, US
Chun-Ting Liu - Hsin-chu, TW
Wei-Jer Sung - New Providence NJ, US
Yang Yang - Gillette NJ, US

Assignee:

Alcatel-Lucent USA Inc. - Murray Hill NJ

International Classification:

H01L 21/331
H01L 21/8222

US Classification:

438309, 438336, 438338, 257E2135

Abstract:

A method for fabricating a bipolar transistor includes forming a vertical sequence of semiconductor layers, forming an implant mask on the last formed semiconductor layer, and implanting dopant ions into a portion of one or more of the semiconductor layers. The sequence of semiconductor layers includes a collector layer, a base layer that is in contact with the collector layer, and an emitter layer that is in contact with the base layer. The implanting uses a process in which the implant mask stops dopant ions from penetrating into a portion of the sequence of layers.

US Patent:

7788566, Aug 31, 2010

Filed:

Jan 18, 2006

Appl. No.:

11/334608

Inventors:

Stan Vitebsky - Morristown NJ, US
Yang Yang - Parsippany NJ, US

Assignee:

Alcatel-Lucent USA Inc. - Murray Hill NJ

International Classification:

G08C 25/02
H04L 1/18

US Classification:

714748

Abstract:

There is provided a system and method for dynamically adjusting the maximum number of hybrid ARQ transmissions in a wireless system. More specifically, in one embodiment, there is provided a method comprising generating a plurality of hybrid ARQ sub-packets associated with a packet, wherein a transmitter is configured to transmit up to a maximum number of the hybrid ARQ sub-packets, detecting a degradation in transmission quality that affects the transmitter, and reducing the maximum number of hybrid ARQ sub-packets associated with the packet that can be transmitted by the transmitter in response to detecting the degradation.