Yong Q Zheng

US Patent:

20220349088, Nov 3, 2022

Filed:

Apr 28, 2021

Appl. No.:

17/243158

Inventors:

- Santa Clara CA, US
Nyi Oo MYO - San Jose CA, US
Tao SHENG - Santa Clara CA, US
Yong ZHENG - Dublin CA, US

International Classification:

C30B 25/16
C30B 23/00
C30B 25/12
C30B 25/10
C30B 23/06
C23C 14/54
C23C 16/46
C23C 16/52
C23C 16/458
C23C 14/50
G01N 21/55

Abstract:

Embodiments of the present disclosure generally relate to apparatus, systems, and methods for in-situ film growth rate monitoring. A thickness of a film on a substrate is monitored during a substrate processing operation that deposits the film on the substrate. The thickness is monitored while the substrate processing operation is conducted. The monitoring includes directing light in a direction toward a crystalline coupon. The direction is perpendicular to a heating direction. In one implementation, a reflectometer system to monitor film growth during substrate processing operations includes a first block that includes a first inner surface. The reflectometer system includes a light emitter disposed in the first block and oriented toward the first inner surface, and a light receiver disposed in the first block and oriented toward the first inner surface. The reflectometer system includes a second block opposing the first block.