Yu Wang

US Patent:

6934297, Aug 23, 2005

Filed:

Nov 2, 2000

Appl. No.:

09/704807

Inventors:

Brahim Bensaou - Kowloon, HK
Yu Wang - Santa Cruz CA, US

Assignee:

Agency for Science, Technology and Research - Singapore

International Classification:

H04L012/413

US Classification:

370445, 370348, 370443, 455450, 455451, 4554521

Abstract:

A communication unit () that wants to transmit a data packet to another communication unit () must acquire access to a common communication channel (not shown) before transmitting a data packet (). For data packets of realtime applications, quality of service (QOS) parameters for the data packet are used to define transmission parameters to communicate the data packet (). These parameters include T() and T(). In addition, compliance with predetermined requirements of size relationship between request-to-send (RTS) and clear-to-send (CTS) packets are imposed.

US Patent:

6982351, Jan 3, 2006

Filed:

Dec 6, 2002

Appl. No.:

10/313530

Inventors:

Benjamin Frydman - Madison WI, US
Andrei V. Blokhin - Fitchburg WI, US
Aparajita Sarkar - Madison WI, US
Hirak S. Basu - Madison WI, US
Venodhar K. Reddy - Madison WI, US
Laurence J. Marton - Palo Alto CA, US
Yu Wang - Madison WI, US

Assignee:

CellGate, Inc. - Redwood City CA

International Classification:

C07C 211/17

US Classification:

564453, 564153, 564445, 564454, 564455, 564457, 564461

Abstract:

Conformationally restricted polyamine compounds useful in treatment of cancer and other diseases marked by abnormal cell proliferation are disclosed. Improved methods of synthesizing such compounds are also disclosed. In one method of the invention, a carbene-bearing or carbene equivalent-bearing compound is reacted with the double bond of an alkene compound to form a cyclopropyl ring as the first step in the synthesis.

US Patent:

7026347, Apr 11, 2006

Filed:

Jun 24, 2003

Appl. No.:

10/606016

Inventors:

Benjamin Frydman - Madison WI, US
Venodhar K. Reddy - Madison WI, US
Hirak S. Basu - Madison WI, US
Aparajita Sarkar - Madison WI, US
Subhra Bhattacharya - Madison WI, US
Yu Wang - Madison WI, US
Laurence J. Marton - Palo Alto CA, US
Andrei V. Blokhin - Fitchburg WI, US

Assignee:

CellGate, Inc. - Redwood City CA

International Classification:

A61K 31/40
A61K 31/555
A61B 5/055
A61B 10/00
C07B 47/00

US Classification:

514410, 514185, 424 9362, 424 961, 540145, 534 15

Abstract:

Porphyrin-polyamine conjugate compounds are disclosed which have anticancer and antitumor effects. The porphyrin moiety selectively localizes in tumors, while the polyamine moiety serves as a cytotoxic agent. Methods of making and using the porphyrin-polyamine conjugate compounds are also disclosed.

US Patent:

7235695, Jun 26, 2007

Filed:

Aug 16, 2005

Appl. No.:

11/205341

Inventors:

Benjamin Frydman - Madison WI, US
Andrei V. Blokhin - Fitchburg WI, US
Aparajita Sarkar - Madison WI, US
Hirak S. Basu - Madison WI, US
Venodhar K. Reddy - Madison WI, US
Laurence J. Marton - Palo Alto CA, US
Yu Wang - Madison WI, US

International Classification:

C07C 209/24
C07C 209/28
C07C 211/17

US Classification:

564468, 564153, 564445, 564453, 564454, 564455, 564457, 564461

Abstract:

Conformationally restricted polyamine compounds useful in treatment of cancer and other diseases marked by abnormal cell proliferation are disclosed. Improved methods of synthesizing such compounds are also disclosed. In one method of the invention, a carbene-bearing or carbene equivalent-bearing compound is reacted with the double bond of an alkene compound to form a cyclopropyl ring as the first step in the synthesis.

US Patent:

7453011, Nov 18, 2008

Filed:

Jun 4, 2007

Appl. No.:

11/810409

Inventors:

Linda Clifford, legal representative - Madison WI, US
Andrei V. Blokhin - Fitchburg WI, US
Aparajita Sarkar - Madison WI, US
Hirak S. Basu - Madison WI, US
Venodhar K. Reddy - Madison WI, US
Laurence J. Marton - Palo Alto CA, US
Yu Wang - Madison WI, US

Assignee:

Progen Pharmaceuticals, Inc. - Redwood City CA

International Classification:

C07C 211/13
A61K 31/13

US Classification:

564461, 564452, 564455, 564457, 514674

Abstract:

Conformationally restricted polyamine compounds useful in treatment of cancer and other diseases marked by abnormal cell proliferation are disclosed. Improved methods of synthesizing such compounds are also disclosed. In one method of the invention, a carbene-bearing or carbene equivalent-bearing compound is reacted with the double bond of an alkene compound to form a cyclopropyl ring as the first step in the synthesis.

US Patent:

7492005, Feb 17, 2009

Filed:

Dec 28, 2005

Appl. No.:

11/321957

Inventors:

Hong Chang - Cupertino CA, US
Tiesheng Li - San Jose CA, US
Yu Wang - Fremont CA, US

Assignee:

Alpha & Omega Semiconductor, Ltd. - Hamilton

International Classification:

H01L 29/76

US Classification:

257330, 257340

Abstract:

This invention discloses an improved trenched metal oxide semiconductor field effect transistor (MOSFET) device that includes a trenched gate surrounded by a source region encompassed in a body region above a drain region disposed on a bottom surface of a substrate. The MOSFET cell further includes a shielded gate trench (SGT) structure below and insulated from the trenched gate. The SGT structure is formed substantially as a round hole having a lateral expansion extended beyond the trench gate and covered by a dielectric liner layer filled with a trenched gate material. The round hole is formed by an isotropic etch at the bottom of the trenched gate and is insulated from the trenched gate by an oxide insulation layer. The round hole has a lateral expansion beyond the trench walls and the lateral expansion serves as a vertical alignment landmark for controlling the depth of the trenched gate. The MOSFET device has a reduced gate to drain capacitance Cgd depending on the controllable depth of the trenched gate disposed above the SGT structure formed as a round hole below the trenched gate.

US Patent:

7521332, Apr 21, 2009

Filed:

Mar 23, 2007

Appl. No.:

11/690581

Inventors:

Tiesheng Li - San Jose CA, US
Yu Wang - Fremont CA, US
Yingying Lou - Shanghai, CN
Anup Bhalla - Santa Clara CA, US

Assignee:

Alpha & Omega Semiconductor, Ltd - Hamilton

International Classification:

H01L 21/76

US Classification:

438426

Abstract:

A method for determining the depth etch, a method of forming a shielded gate trench (SGT) structure and a semiconductor device wafer are disclosed. A material layer is formed over part of a substrate having a trench. The material fills the trench. A resist mask is placed over a test portion of the material layer thereby defining a test structure that lies underneath the resist mask. The resist mask does not cover the trench. The material is isotropically etched and a signal related to a resistance change of the test structure is measured. A lateral undercut Dof the test structure is determined from the signal and an etch depth Dis determined from D. The wafer may comprise one or more test structures forming a bridge circuit; one or more metal contacts that electrically connect the test structures through contact holes: and resist layer including over the test structures.

US Patent:

7632733, Dec 15, 2009

Filed:

Apr 29, 2006

Appl. No.:

11/413248

Inventors:

Yu Wang - Fremont CA, US
Tiesheng Li - San Jose CA, US
Hong Chang - Cupertino CA, US

Assignee:

Alpha & Omega Semiconductor, Inc. - Sunnyvale CA

International Classification:

H01L 21/336

US Classification:

438270, 257E2153

Abstract:

This invention discloses a semiconductor wafer for manufacturing electronic circuit thereon. The semiconductor substrate further includes an etch-back indicator that includes trenches of different sizes having polysilicon filled in the trenches and then completely removed from some of the trenches of greater planar trench dimensions and the polysilicon still remaining in a bottom portion in some of the trenches having smaller planar trench dimensions.