Yung Shan Chang

US Patent:

6660612, Dec 9, 2003

Filed:

Nov 7, 2002

Appl. No.:

10/289606

Inventors:

Yung Shan Chang - Plano TX
Scott R. Summerfelt - Garland TX

Assignee:

Texas Instruments Incorporated - Dallas TX

International Classification:

H01L 2176

US Classification:

438401, 438462, 438975

Abstract:

One aspect of the invention relates to a method of manufacturing a semiconductor device in which an alignment mark is formed by a plurality of adjacent filled trenches. A processing tool detects the trenches as though they were a single filled trench of larger dimension. When the trenches are metal filled, the metal is more easily protected from oxidation than when the metal is formed into a single large trench, an effect that is pronounced when the trenches are filled with tungsten. Another aspect of the invention relates to an alignment mark formed by a plurality of tungsten filled trenches. The alignment mark can be used to align the pattern for an FeRAM capacitor stack to underlying tungsten contacts.

US Patent:

20030127091, Jul 10, 2003

Filed:

Nov 18, 2002

Appl. No.:

10/298956

Inventors:

Yung Chang - Arlington TX, US

International Classification:

A61M016/00

US Classification:

128/200240

Abstract:

I. Discovery of the Right Respiratory Science. Owing to the discovery of “Haldane effect”, we comprise this Invention. This effect says, “The deoxygenation of the blood increases its ability to carry CO.”. So that we understand why most people are by exercise to promote health, it is with big muscles-contraction to have the “Deoxygenation of the Blood” as in exercise by walking, jogging or running to consume O5-15 times more than sitting in quiet, but few people know why and how is the right way. Especially as we see, a lot of professional athletes usually early died of heart diseases, because there is not the right respiratory science and process until today. II. The Right Respiratory Science and Process. We cite the right respiratory theories from the right related science as: “Haldane effect”, “Gas Diffusion Law” and the “Relations between Respiration and Autonomic Nervous Functions”. In addition to promote health, life and welfare for common people, it is to prevent from and control of many traditional functional diseases standing as rheumatism, cold and heart diseases, etc. The invented respiratory process is that, exhaling be long and slow; Inhaling be short and shallow once no longer than 1 second, by elasticity of breathing organs after exhaling; in case for more Orequired as in sport, it just speeds the breathing rate and keeps other breathing technics the same.

US Patent:

20230061951, Mar 2, 2023

Filed:

Aug 27, 2021

Appl. No.:

17/459849

Inventors:

- Dallas TX, US
Yung Shan Chang - Plano TX, US

International Classification:

H01L 23/00
H01L 23/532
H01L 21/311

Abstract:

A method for fabricating a semiconductor product includes forming a dielectric layer over a top level metallization layer of a semiconductor process wafer. The dielectric layer is patterned using a grayscale mask process to define a contact pad opening in the dielectric layer, thereby producing a patterned dielectric layer in which the contact pad opening is aligned to a contact pad defined in the top level metallization layer. A metal layer is deposited over the patterned dielectric layer, including within the contact pad opening. A portion of the metal layer is removed by a chemical mechanical polishing (CMP) process, with a remaining portion of the metal layer having a sloped sidewall.

US Patent:

20150221524, Aug 6, 2015

Filed:

Feb 4, 2014

Appl. No.:

14/172497

Inventors:

- Dallas TX, US
NENG JIANG - PLANO TX, US
YUNG SHAN CHANG - PLANO TX, US
RICKY ALAN JACKSON - RICHARDSON TX, US

Assignee:

Texas Instruments Incorporated - Dallas TX

International Classification:

H01L 21/3213

Abstract:

A method of etching a metal containing layer including a metal including material includes providing a substrate including a top semiconductor surface having the metal containing layer thereon. A photoresist pattern is formed from a photoresist layer on the metal containing layer including forming sloped edge regions of the photoresist layer, wherein the sloped edge regions have an average angle over a full length of the sloped edge regions of from ten (10) to fifty (50) degrees. The metal containing layer is dry etched using the photoresist pattern, wherein the sloped edge regions of the photoresist layer reduce deposition and growth of an etch byproduct including the metal including material into sidewalls of the photoresist layer (metal/polymer sidewall defect) as compared to a conventional vertical (or near-vertical) edge of the photoresist layer.