Ananda H Kumar

US Patent:

6370006, Apr 9, 2002

Filed:

Feb 17, 2000

Appl. No.:

09/506423

Inventors:

Ananda H. Kumar - Milpitas CA
Kadthala Narendrnath - San Jose CA
Shamouil Shamouilian - San Jose CA

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

H02N 1300

US Classification:

361234

Abstract:

An electrostatic chuck and a process of manufacturing an electrostatic chuck for supporting a semiconductor wafer during wafer processing and for providing a plurality of gas inlet channels extending through the chuck and through which thermal transfer gas can be supplied to the back side of the wafer to enhance the thermal transfer between the wafer and the chuck, embedding a plurality of inserts in a ceramic electrostatic chuck, each insert comprising a matrix of the ceramic of which the electrostatic chuck is made and a plurality of removable elongate members, and removing the elongate members to form a plurality of elongate holes providing the plurality of gas inlet channels.

US Patent:

6414834, Jul 2, 2002

Filed:

Jun 16, 2000

Appl. No.:

09/596108

Inventors:

Edwin C. Weldon - Los Gatos CA
Kenneth S. Collins - San Jose CA
Arik Donde - Cupertino CA
Brian Lue - Mountain View CA
Dan Maydan - Los Altos Hills CA
Robert J. Steger - Cupertino CA
Timothy Dyer - Tempe AZ
Ananda H. Kumar - Milpitas CA
Alexander M. Veytser - Mountain View CA
Kadthala R. Narendrnath - San Jose CA
Semyon L. Kats - San Francisco CA
Arnold Kholodenko - San Francisco CA
Shamouil Shamouilian - San Jose CA
Dennis S. Grimard - Ann Arbor MI

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

H02N 1300

US Classification:

361234

Abstract:

An electrostatic chuck useful for holding a substrate in a high density plasma, comprises an electrode at least partially covered by a semiconducting dielectric , wherein the semiconducting dielectric may have an electrical resistance of from about 5Ã10 cm to about 8Ã10 cm.

US Patent:

6440221, Aug 27, 2002

Filed:

May 20, 1998

Appl. No.:

09/082430

Inventors:

Shamouil Shamouilian - San Jose CA
Ananda H. Kumar - Fremont CA
Kadthala R. Narendrnath - San Jose CA
Eric Farahmand E Askarinam - Sunnyvale CA
Edwin C. Weldon - Los Gatos CA
Michael Rice - Pleasanton CA
Kenneth S. Collins - San Jose CA

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

C23C 1600

US Classification:

118724, 118723 I, 20429809, 156345

Abstract:

A temperature control system is used to control the temperature of a process chamber during processing of a semiconductor substrate The temperature control system comprises a heat exchanger plate for removing heat from the chamber and a heat transfer member for conducting heat to the heat exchanger plate The heat transfer member comprises a lower heat conduction surface bonded to an external surface of the chamber and an upper heat transmitting surface thermally coupled to the heat exchanger plate Preferably, the temperature control assembly comprises a heater for heating the chamber and a computer control system for regulating the heat removed by the heat exchanger plate as well as the heat supplied by the heater to maintain the chamber at substantially uniform temperatures.

US Patent:

6462928, Oct 8, 2002

Filed:

May 7, 1999

Appl. No.:

09/306944

Inventors:

Shamouil Shamouilian - San Jose CA
You Wang - Cupertino CA
Surinder S. Bedi - Fremont CA
Arnold Kholodenko - San Francisco CA
Alexander M. Veytser - Mountain View CA
Kadthala R. Narendrnath - San Francisco CA
Semyon L. Kats - San Francisco CA
Dennis S. Grimard - Ann Arbor MI
Wing L. Cheng - Sunnyvale CA
Ananda H. Kumar - Milpitas CA

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

H02N 1300

US Classification:

361234

Abstract:

An electrostatic chuck comprises an electrical connector which is connected to the electrode to conduct an electrical charge to the electrode The electrical connector comprises a refractory metal having a melting temperature of at least about 1500Â C. , such as for example, tungsten, titanium, nickel, tantalum, molybdenum, or alloys thereof. Preferably, the electrical connector is bonded to the electrode by a metal having a softening temperature of less than about 600Â C. , such as aluminum, indium, or low melting point alloys.

US Patent:

6490144, Dec 3, 2002

Filed:

Nov 29, 1999

Appl. No.:

09/450791

Inventors:

Kadthala R. Narendrnath - San Jose CA
Syed H. Askari - San Jose CA
Dennis S. Grimard - Ann Arbor MI
Surinder S. Bedi - Fremont CA
Ananda H. Kumar - Milpitas CA
Shamouil Shamouilian - San Jose CA

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

H02N 1300

US Classification:

361234

Abstract:

A chamber for processing a substrate comprises a support comprising a dielectric enveloping an electrode The electrode may be chargeable to electrostatically hold the substrate or may be chargeable to form an energized gas in the chamber to process the substrate A base is below the support and a compliant member is positioned between the support and the base The compliant member may be adapted to alleviate thermal stresses arising from a thermal expansion mismatch between the dielectric and the base.

US Patent:

6490146, Dec 3, 2002

Filed:

Aug 13, 2001

Appl. No.:

09/929806

Inventors:

You Wang - Cupertino CA
Shamouil Shamouilian - San Jose CA
Arnold Kholodenko - San Francisco CA
Alexander M. Veytser - Mountain View CA
Surinder S. Bedi - Fremont CA
Kadthala R. Narendrnath - San Jose CA
Semyon L. Kats - San Francisco CA
Dennis S. Grimard - Ann Arbor MI
Wing L. Cheng - Sunnyvale CA
Ananda H. Kumar - Milpitas CA

Assignee:

Applied Materials Inc. - Santa Clara CA

International Classification:

H01G 2300

US Classification:

361234, 361115, 361103

Abstract:

An electrostatic chuck for holding a substrate has an electrostatic member having a dielectric covering an electrode that is chargeable to electrostatically hold the substrate. The bond layer has a metal layer that is infiltrated or brazed between the electrostatic member and the base. The base may be a composite of a ceramic and metal, the composite having a coefficient of thermal expansion within about Â30% of a coefficient of thermal expansion of the electrostatic member. The base may also have a heater.

US Patent:

6538872, Mar 25, 2003

Filed:

Nov 5, 2001

Appl. No.:

09/307214

Inventors:

You Wang - Cupertino CA
Shamouil Shamouilian - San Jose CA
Arnold Kholodenko - San Francisco CA
Alexander M. Veytser - Mountain View CA
Surinder S. Bedi - Fremont CA
Kadthala R. Narendrnath - San Jose CA
Semyon L. Kats - San Francisco CA
Dennis S. Grimard - Ann Arbor MI
Wing L. Cheng - Sunnyvale CA
Ananda H. Kumar - Milpitas CA

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

H01G 2300

US Classification:

361234, 361115, 361103

Abstract:

An electrostatic chuck for holding a substrate comprises an electrostatic member made from a dielectric covering an electrode that is chargeable to electrostatically hold the substrate A base that includes a heater is joined to the electrostatic member The base may be made from a composite material, such as a porous ceramic infiltrated with the metal, and may be joined to the electrostatic member by a bond layer.

US Patent:

6586886, Jul 1, 2003

Filed:

Dec 19, 2001

Appl. No.:

10/027732

Inventors:

Dan Katz - Agoura Hills CA
Yan Ye - Saratoga CA
Robert B. Hagen - Newark CA
Xiaoye Zhao - Mountain View CA
Ananda H. Kumar - Fremont CA
Kang-Lie Chiang - San Jose CA
Hamid Noorbakhsh - Fremont CA
Shiang-Bau Wang - Hsinchu, TW

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

H01J 724

US Classification:

31511121, 118728, 118723 E, 15634551

Abstract:

The invention is embodied in a plasma reactor for processing a semiconductor wafer, the reactor having a gas distribution plate including a front plate in the chamber and a back plate on an external side of the front plate, the gas distribution plate comprising a gas manifold adjacent the back plate, the back and front plates bonded together and forming an assembly. The assembly includes an array of holes through the front plate and communicating with the chamber, at least one gas flow-controlling orifice through the back plate and communicating between the manifold and at least one of the holes, the orifice having a diameter that determines gas flow rate to the at least one hole. In addition, an array of pucks is at least generally congruent with the array of holes and disposed within respective ones of the holes to define annular gas passages for gas flow through the front plate into the chamber, each of the annular gas passages being non-aligned with the orifice.